Ka波段GaN HEMT功率器件

设计了Ka波段GaN功率高电子迁移率晶体管(HEMT)外延材料及器件结构,采用AlN插入层提高了二维电子气(2DEG)浓度.采用场板结构提高了器件击穿电压.采用T型栅工艺实现了细栅制作,提高了器件高频输出功率增益.采用钝化工艺抑制了电流崩塌,提高了输出功率.采用通孔工艺减小源极寄生电阻,通过优化钝化层厚度减小了寄生电容,提高了器件增益.基于国产SiC外延材料及0.15 μm GaN HEMT工艺进行了器件流片,最终研制成功Ka波段GaN HEMT功率器件.对栅宽300 μm器件在29 GHz下进行了微波测试,工作栅源电压为-2.2V,源漏电压为20 V,输入功率为21 dBm时,器件输出功率为30 dBm,功率增益为9 dB,功率附加效率约为43％,功率密度达到3.3 W/mm.     

High‐Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self‐Assembled Monolayer Doping

Most doping research into transition metal dichalcogenides (TMDs) has been mainly focused on the improvement of electronic device performance. Here, the effect of self‐assembled monolayer (SAM)‐based doping on the performance of WSe₂‐ and MoS₂‐based transistors and photodetectors is investigated. The achieved doping concentrations are ≈1.4 × 10¹¹ for octadecyltrichlorosilane (OTS) p‐doping and ≈10¹¹ for aminopropyltriethoxysilane (APTES) n‐doping (nondegenerate). Using this SAM doping technique, the field‐effect mobility is increased from 32.58 to 168.9 cm² V^?1 s in OTS/WSe₂ transistors and from 28.75 to 142.2 cm² V^?1 s in APTES/MoS₂ transistors. For the photodetectors, the responsivity is improved by a factor of ≈28.2 (from 517.2 to 1.45 × 10⁴ A W^?1) in the OTS/WSe₂ devices and by a factor of ≈26.4 (from 219 to 5.75 × 10³ A W^?1) in the APTES/MoS₂ devices. The enhanced photoresponsivity values are much higher than that of the previously reported TMD photodetectors. The detectivity enhancement is ≈26.6‐fold in the OTS/WSe₂ devices and ≈24.5‐fold in the APTES/MoS₂ devices and is caused by the increased photocurrent and maintained dark current after doping. The optoelectronic performance is also investigated with different optical powers and the air‐exposure times. This doping study performed on TMD devices will play a significant role for optimizing the performance of future TMD‐based electronic/optoelectronic applications.     

基于贝叶斯动态模型的某器件性能预测

在导弹武器系统当中,及时准确的故障预报对提高导弹的安全性具有极其重要的意义。本文根据导弹惯性器件故障预报系统的设计要求,利用贝叶斯动态线性模型对导弹某惯性器件的性能进行了预测研究。贝叶斯预测是利用历史信息和从样本获得的信息来获取后验分布的一种预测方法,该方法不需要平稳性的假设,而且充分利用了已有的信息,可以用来对电子设备的性能进行预测。实例研究表明,该方法具有比较好的预测效果。     

水下信号源电路的设计与实现

论述一种新型水下运动目标信号源电路的设计与工程实现。工程中,选用单片机89C52和8279,复杂可编程逻辑器件(CPLD)将晶振频率分频,模拟电路产生噪声信号,开发了一个实用性强、功能扩展灵活、信号参数可调的低频信号源,经D/A转换和功率输出,送到换能器输出。其波形参数:频率、脉宽、周期、幅值均可键盘设置。     

压控器件的磁隔离驱动电路设计

根据压控器件的特点,设计出了适用于任意占空比的磁隔离驱动电路。通过仿真,进一步得到最优化的实际驱动电路,最后给出了实验波形。     

基于OMA标准的FOTA技术研究

本文介绍了近年来出现的以FOTA(固件更新)技术为代表的MDM(移动设备管理)发展现状,主要研究了基于OMA(开放移动联盟)标准的FOTA技术框架和一些关键技术特征,最后对FOTA在中国移动市场所面临的问题进行了分析.     

基于Device Net现场总线的电动机综合保护测控装置

为提高继电保护装置的通信方法、实时响应及信号处理等性能,开发了一种基于DeviceNet总线的双CPU结构的电动机综合保护测控装置。在分析DeviceNet数据触发方式、通信连接、报文类型等关键技术的基础上,实现了针对该装置的对象建模和设备描述,并使其顺利通过联网测试。该装置集保护、测量、控制和通信等多种功能于一体。动态模拟试验和现场运行结果表明,该装置能对35kV及以下电压等级的中压电动机的各种故障做出准确判断,并具有较高的测量精度和良好的控制性能。     

心音心电检测仪电磁兼容问题的测试分析及整改方法

现代医疗器械更偏向于高精确度、高敏感度和小型化,其所处的电磁环境越来越复杂。外界电磁干扰对医疗设备会产生影响,严重时甚至影响医生的诊断。本文结合心音心电检测仪,基于医疗器械测试标准对传导发射测试、辐射发射测试和静电放电这3个测试项目进行了研究,提出了壳体整改,增加滤波电路、磁环、电荷释放电路等整改方法。对其他类型相关医疗器械的电磁兼容问题分析和整改,有一定的参考借鉴作用。     

Hermetic Seal of Organic Light Emitting Diode with Glass Frit

The components of OLED encapsulation with hermetic sealing and a 1026-day lifetime were measured by PXI-1033. The optimal characteristics were obtained when the thickness of the TPBi layer was 20 nm. This OLED obtained a maximum luminance (Lmax) of 25,849 cd/m² at a current density of 1242 mA/cm², an external quantum efficiency (EQE) of 2.28%, a current efficiency (CE) of 7.20 cd/A, and a power efficiency (PE) of 5.28 lm/W. The efficiency was enhanced by Lmax 17.2%/EQE 0.89%/CE 42.1%/PE 41.9%. The CIE coordinates of 0.32, 0.54 were all green OLED elements with wavelengths of 532 nm. The shear strain and leakage test gave results of 16 kgf and 8.92 × 10⁻⁹ mbar/s, respectively. The reliability test showed that the standard of MIL-STD-883 was obtained.     

半导体器件发展历程及其展望

简述了半导体器件发展历程,及其对人类社会发展所产生的深刻影响。探讨了半导体器件所取得的最新研究成果以及它今天面临的挑战及未来发展趋势。最后阐述了世界半导体产业重心的转移及其给中国半导体产业发展带来的机遇与挑战。