首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   1篇
  免费   1篇
  国内免费   9篇
无线电   11篇
  2023年   1篇
  2017年   1篇
  2016年   1篇
  2014年   2篇
  2012年   1篇
  2011年   5篇
排序方式: 共有11条查询结果,搜索用时 15 毫秒
11.
A radiation-hardened SRAM-based field programmable gate array VS 1000 is designed and fabricated with a 0.5 μm partial-depletion silicon-on-insulator logic process at the CETC 58th Institute.The new logic cell (LC),with a multi-mode based on 3-input look-up-table (LUT),increases logic density about 12% compared to a traditional 4-input LUT.The logic block (LB),consisting of 2 LCs,can be used in two functional modes:LUT mode and distributed read access memory mode.The hierarchical routing channel block and switch block can significantly improve the flexibility and routability of the routing resource.The VS1000 uses a CQFP208 package and contains 392 reconfigurable LCs,112 reconfigurable user I/Os and IEEE 1149.1 compatible with boundaryscan logic for testing and programming.The function test results indicate that the hardware and software cooperate successfully and the VS 1000 works correctly.Moreover,the radiation test results indicate that the VS 1000 chip has total dose tolerance of 100 krad(Si),a dose rate survivability of 1.5 × 1011 rad(Si)/s and a neutron fluence immunity of 1 × 1014 n/cm2.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号