UP-conversion of terahertz radiation induced by photon drag effect

An all-optical approach to convert terahertz radiation (THz, wavelength λ₁) into infrared (IR, peak wavelength λ₂) is presented. We show that this up-conversion process is due to the photon drag effect induced by the THz radiation in intrinsic narrow-gap semiconductors followed by spatial redistribution of current carriers and band-to-band radiative recombination. The process results in non-selective high-speed (ns range rise/fall times) IR imaging of positive (conventional luminescence) and/or negative (negative luminescence) contrasts. Estimates made for an InSb pixelless converter at 300 K and moderate THz intensity (kW/cm²) show that this up-conversion process (with λ₁/λ₂>10²) can be observed with a conventional thermal imaging camera.     

Physical Interpretation of the Motion of a Laser Pulse within the Framework of the Four-Oscillator Model

A physical multidimensional local model of the propagation process of a laser pulse in air having no analogy to famous models in laser physics is constructed. It is based on the representations of classical wave mechanics characteristic of the theory of scalar wave fields.     

Differential scanning calorimetry and thermogravimetric analysis investigation of the thermal properties and degradation of some radiation‐grafted films and membranes

The influence of irradiation and grafting on the crystallinity of three base polymers has been investigated with differential scanning calorimetry. Grafting has the largest effect on the base polymer crystallinity and results in a reduction of the crystallinity. The thermal degradation of the base polymers and grafted films has been investigated with thermogravimetric analysis. The extent of the fluorination of the base polymer, the irradiation method, and the graft level all influence the thermal degradation and its activation energy. It is proposed that the variation of the chain lengths of the grafted polystyrene chains is actually a primary underlying factor responsible for the influence of these various parameters on the degradation process. The first results of a comparative thermal analysis of some fuel‐cell membranes are also presented, and the promise and shortcomings of this method are discussed. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 2612–2624, 2004     

空间目标的可见光散射与红外辐射

利用Lowtran7大气传输模型计算0.4～0.8μm可见光波段的太阳辐射、大气自身的热辐射以及天地背景辐射.依据粗糙面光散射理论与双向反射分布函数计算空中目标表面对太阳辐射和云层对阳光反射的散射.利用传热学和背景辐射理论,根据能量守恒定律建立空间目标表面温度的热平衡方程.以气球为例,计算不同表面涂层材料的气球,在不同地理位置、不同高度和不同时间条件下,其温度及辐射功率的变化.分析空间目标红外辐射特性的一般规律和特征.     

微波谐振腔Q值对磁激子振幅不稳定态阈值的影响

基于Safonov和Yamazaki所发展的激励自旋波非线性辐射衰减的理论［J. MMM. 161 (1996 ) 275］, 考虑磁激子与磁激子以及磁激子与光子的两种非线性相互作用过程，计算了微波谐振腔Q值对磁激子振幅不稳定态阈值的影响，结果与实验数据基本一致. 关键词： 磁激子 谐振器 铁磁体     

半自由声场的全息重建和预测实验研究

半自由声场环境下的声源重建和声场预测研究对声全息技术走向实际应用具有非常重要的意义.在提出基于分布源边界点法的半自由声场全息重建和预测方法的基础上，对此展开了实验研究.并将重建和预测的结果与常规方法重建和预测的结果进行了比较和讨论，说明了重建预测过程中反射声压的影响和考虑反射声压的必要性，证明了所提出方法在解决半自由声场环境下存在地面反射时的声源重建和声场预测时的有效性和准确性.还提出了采用奇异值截断滤波和Tikhonov正则化方法来削弱测量误差的影响，从而进一步优化了重建结果，提高了全息成像的可信度. 关键词： 声全息 半自由场 边界点 声辐射 反射声     

光辐射计量测试技术

简要介绍国外光辐射计量采用的主要方法、测试手段和发展趋势。为了满足国防系统对光辐射计量的需要建立了一批计量标难，解决了光辐射源辐射特性和探测器特性计量测试问题。     

辐射加热金X光再发射时间测量

利用星光Ⅱ三倍频激光打双盘靶，研究了辐射加热材料的Ｘ光发射时间。激光脉冲能量４０～６０Ｊ、脉冲宽度６００～７００ｐｓ。通过两台时间关联的亚千Ｘ光能谱仪分别监测双盘靶初、次级发射Ｘ光谱，给出了辐射加热次级Ｘ光再发射时间。     

一种简易云雾室的制作

本文利用自制云雾室把微观粒子的运动转化为宏观现象，从而供实验观察和研究。     

Influence of radiation on thin ZnS-Tb films

Changes in thin zinc-sulfide films under the action of the γ-radiation of Co⁶⁰ are studied by investigating electroluminescence spectra of terbium embedded in these films as a luminescent probe. It is shown that changes in the relation of the intensities of bands, a decrease in their halfwidth and the background component, and simplification of the spectrum are observed in a short-wave region of the Tb radiation spectrum that corresponds to⁵D₃→⁷F_j transitions. The same modification of the radiation spectrum is characteristic of ZnS films whose crystalline structure is ordered in the course of thermal annealing at a temperature of 350°C. Based on the analysis of the data obtained it is inferred that irradiating the ZnS films with small radiation doses of 10⁴–10⁵ rad leads to the ordering of their crystalline structure due to the elimination of one of the types of structural defects. Institute of Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauka Ave., Kiev-28, 252650. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 3, pp. 338–341, May–June, 1997.