紧凑型FLC光纤PDL模块

描述了紧凑型FLC（铁电液晶）光纤PDL（光子延迟线）模块的结构和运转特性；分析了插入损失；提出多信道运转时依赖于波长的设计方案。     

自由空间二维榕树网实现方法

鉴于榕树网在自由空间光子交换网络中具有重要的应用价值,分析了榕树网的特点和4×4二维榕树网的空间拓扑结构,通过偏振光分光棱镜、微闪耀光栅阵列、平面反射镜、半反半透镜和液晶空间光调制器的集成,构建二维的榕树交换网实验模块,利用微闪耀光栅的衍射特性,控制每块微闪耀光栅的周期,以实现入射光信号不同方向的闪耀输出,最终完成二维榕树网自由空间水平和竖直方向上的交叉互连,直通则由平面镜反射实现。对二维榕树网实验模块的功能分析表明,该实验模块理论上可以完成4×4二维面阵内光信号(或数据)的排序、交换、组播、广播、矩阵变换等操作,具有交换透明、速度快、空间带宽高等特点,在全光交换和光通信中具有一定的应用。     

A One‐Kilobit PQR‐CMOS Smart Pixel Array

The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and √T‐dependent thermal red shifts. We observed uniform bottom emissions from a 1‐kb smart pixel chip of a 32×32 InGaAs PQR laser array flip‐chip bonded to a 0.35 µm CMOS‐based PQR laser driver. The PQR‐CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization.     

基于嵌入式计算机和Ethernet的分布式波控系统

介绍一种基于嵌入式计算机和以太网(Ethernet)的相控阵雷达分布式波控系统。整个波控系统以数个嵌入式计算机为核心，通过以太网与雷达的控制计算机通讯。     

准最佳二进阵列偶

本文在最佳二进阵列、准最佳二进阵列和最佳二进阵列偶的基础上,定义了一种新的最佳信号,即准最佳二进阵列偶.讨论了准最佳二进阵列偶的体积、变换性质,并对其进行了Fourier频谱分析,得到了部分有益的结果.还用计算机穷举搜索出了体积从2~24的准最佳二进阵列偶.     

一项从CAA到CAD的工作 ～正交优化法与SPICE相结合

电子电路的计算机辅助设计方法是促进电子技术发展的一种有效工具。本文介绍如何将行之有效的正交优化法与国际盛行的模拟电子电路的分析程序ＳＰＩＣＥ相结合，形成了ＡＣＯＤ软件，将ＣＡＡ扩展为ＣＡＤ。     

自成像列阵共振腔的分析——Ⅰ.Talbot共振腔

利用自成像效应进行半导体列阵激光器锁相是一种重要的外腔锁相技术,所构成的共振腔可分为Talbot腔和带相位补偿板的Lau腔。我们用Fox-Li方法计算了共振模式。本文给出了Talbot腔的计算结果和分析,表明同相和反相模的损耗随腔长变化存在临界点。     

面阵列封装器件的贴装技术

面阵列封装器件在电子产品中的使用率逐年上升，如何实现其高速贴装是影响生产线效率的重要因素。从不同的角度论述了面阵列封装器件实现高速贴装的手段与技术。     

PERIODIC DYADIC GREEN''S FUNCTION FOR FIELD ANALYSIS IN EMC CHAMBER

Herein a novel Dyadic Green's Function (DGF) is presented to calculate the field in ElectroMagnetic Compatibility (EMC) chamber. Due to the difficulty of simulating the whole chamber environment, the analysis combines the DGF formulation and the FEM method, with the latter deals with the reflection from absorbers. With DGF formulation for infinite periodic array structures, this paper investigates electromagnetic field in chamber with truncated arrays. The reflection from the absorber serves as the virtual source contributing to the total field. Hence the whole chamber field calculation can be separated from the work of absorber model set-up. Practically the field homogeneity test and Normal Site Attenuation (NSA) test are carried out to evaluate the chamber performance. Based on the method in this paper, the simulation results agree well with the test, and predict successfully the victim frequency points of the chamber.     

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.