WCDMA系统中SPT数字滤波器的一种设计方法

相对于传统的数字滤波器实现方法,符号的2次幂和(SPT)滤波器用移位寄存器替代乘法器,因而资源消耗少、速度快,更加适于专用集成电路(ASIC)设计.介绍了一种适用于宽带码分多址(WCDMA)前向信道中给定基带成形滤波器单位脉冲响应后设计SPT滤波器的方法.相对于传统的理想SPT系数优化方法,此方法更适于给定单位脉冲响应后SPT滤波器的设计,计算复杂度低;仿真结果显示,相对于更加简单的四舍五入方法,此算法在性能上又有可观的增益.     

相控阵AEW雷达杂波抑制的辅助通道方法研究

本文分析了相控阵机载预警(AEW)雷达杂波抑制的现有两种辅助通道降维技术(Klemm方法和简化方法)的性能，并提出了一种新的辅助通道方法。新方法的基本思想为：根据待处理距离段内各距离单元杂波能量在波束一多普勒域分布的统计特征自适应地选取辅助通道，使所选辅助通道实时地逼近杂波子空间，从而有效抑制杂波。本文方法不但可以用于非正侧视阵情况，而且误差鲁棒性好。计算机仿真结果证实了其有效性。     

Physical Interpretation of the Motion of a Laser Pulse within the Framework of the Four-Oscillator Model

A physical multidimensional local model of the propagation process of a laser pulse in air having no analogy to famous models in laser physics is constructed. It is based on the representations of classical wave mechanics characteristic of the theory of scalar wave fields.     

光参量啁啾脉冲饱和放大的增益稳定性

 光参量啁啾脉冲放大（OPCPA）在饱和放大区存在一个增益稳定点，据此设计了一个输出稳定的三级OPCPA系统；第一、二、三级分别选用准相位匹配的周期极化钛氧磷酸钾（PPKTP）晶体、LBO晶体和KDP晶体作为增益介质。饱和放大时，增益随泵浦光强度变化时的增益输出稳定性明显改善，在泵浦光强度抖动低于6%的情况下，各级光参量放大器OPA输出的增益抖动小于1%。前级采用准相位匹配的PPKTP晶体作为增益介质，在远低于破坏阈值的30MW/cm²的泵浦功率密度下，可得到2×10⁵的饱和放大增益和20%的能量转换效率。     

介质靶表面的充电效应对等离子体浸没离子注入过程中鞘层特性的影响

针对等离子体浸没离子注入技术在绝缘体表面制备硅薄膜工艺，采用一维脉冲鞘层模型描述介质靶表面的充电效应对鞘层厚度、注入剂量及靶表面电位等物理量的影响.数值模拟结果表明：随着等离子体密度的增高，表面的充电效应将导致鞘层厚度变薄、表面电位下降以及注入剂量增加，而介质的厚度对鞘层特性的影响则相对较小. 关键词： 等离子体浸没离子注入 脉冲鞘层 绝缘介质 充电效应     

爆磁压缩发生器通过脉冲变压器对脉冲形成线充电的理论分析

 将爆磁压缩等效为电流源的方法，对爆磁压缩发生器通过脉冲变压器对脉冲形成线充电进行了理论分析，得出爆磁压缩发生器在负载上产生电流波形（简称负载电流）为直线情况和任意电流波形情况下充电电流和充电电压的表达式。分析表明变压器耦合互感与负载电流随时间变化增长率是脉冲形成线充电的两个重要参数，脉冲形成线第一个充电电压峰值与变压器的耦合互感和负载电流波形斜率成正比，负载电流波形斜率的变化可以改变充电电压峰值的时间，斜率不断增加可以延长第一个充电电压峰值时间，从而可能增加充电电压的幅值，提高爆磁压缩发生器能量的利用效率。     

超短脉冲超强激光与固体靶相互作用中高能离子的产生

 用2D3V PIC粒子模拟方法得到了超短脉冲超强激光与固体靶相互作用中高能离子产生的图像，并对其机理进行了研究。在靶前后表面都观察到了高能离子的产生，并诊断了离子能谱。模拟结果表明，在靶前表面所产生的高能离子，角分布较大，在向靶内输运过程中会损失能量；在靶后表面产生的高能离子，定向性很好，能获得很高的能量。模拟得到的离子能量和实验观测结果在量级上相符。     

高速色散补偿系统中喇曼放大器性能研究

利用喇曼放大器的非线性偏微分耦合方程组,对带喇曼放大器的色散补偿系统进行了仿真,并与传统的仿真方法进行了比较.结果表明:在色散完全补偿系统中,当传输速率较高时,忽略色散后的传统仿真方法的结果,与采用色散补偿技术后使整个系统色散为零的仿真结果有一定偏差,此时不能忽略色散的作用.还对前补偿系统和后补偿系统进行了研究,利用Q值性能判别法,分别得到了信号光脉冲的最佳占空比和最佳脉冲阶数.     

Stress State of Multilayer Thin-Walled Elements with Interfacial Defects of Structure

Based on the discrete-structural theory of thin plates and shells, a calculation model for thin-walled elements consisting of a number of rigid anisotropic layers is put forward. It is assumed that the transverse shear and compression stresses are equal on the interfaces. Elastic slippage is allowed over the interfaces between adjacent layers. The solution to the problem is obtained in a geometrically nonlinear statement with account of the influence of transverse shear and compression strains. The stress-strain state of circular two-layer transversely isotropic plates, both without defects and with a local area of adhesion failure at their center, is investigated numerically and experimentally. It is found that the kinematic and static contact conditions on the interfaces of layered thin-walled structural members greatly affect the magnitude of stresses and strains. With the use of three variants of calculation models, in the cases of perfect and weakened contact conditions between layers, the calculation results for circular plates are compared. It is revealed that the variant suggested in this paper adequately reflects the behavior of layered thin-walled structural elements under large deformations. __________ Translated from Mekhanika Kompozitnykh Materialov, Vol. 41, No. 6, pp. 761–772, November–December, 2005.     

New developments in CdTe and CdZnTe detectors for X and γ-ray applications

There has been considerable recent progress in II-VI semiconductor material and in methods for improving performance of the associated radiation detectors. New high resistivity CdZnTe material, new contact technologies, new detector structures, new electronic correction methods have opened the field of nuclear and x-ray imaging for industrial and medical applications. The purpose of this paper is to review new developments in several of these fields. In addition, we will present some recent results at LETI concerning first the CdTe 2-D imaging system (20 × 30 mm² with 400 × 600 pixels) for dental radiology and second the CdZnTe fast pulse correction method applied to a 5 × 5 × 5 mm³ CdZnTe detector (energy resolution = 5% for detection efficiency of 85% at 122 keV) for medical imaging.