A dynamical test of phase transition order: New things in old places or old wine in new bottles

We first discuss nonlinear aspects of phase transition theory applied to a particular liquid crystal phase transition. A simple derivation is given to show how two coupled Goldstone modes (one appearing as gauge fluctuations of the ordered phase) can force a phase transition, against all expectations, to take place discontinuously (theory of Halperin, Lubensky, and Ma)-but the discontinuity may be immeasurably small. Then, we describe a new dynamical test of phase transition order, developed by Cladiset al., that turns out to be more sensitive than x-ray diffraction and adiabatic calorimetry. Quantitative data found by this new method are in excellent agreement with the measurements of adiabatic calorimetry and x-ray diffraction as well as expectations implicit in the predictions of HLM.This is the text of an after-banquet talk given at the CNLS Workshop on the Dynamics of Concentrated Systems.     

O在Au(111)表面吸附的密度泛函理论研究

应用密度泛函理论，本文系统地研究了O在Au(111)表面上的吸附能、吸附结构、功函数、电子密度和投影态密度，给出了覆盖度从0.11ML到1.0ML的范围内，O的吸附特性随覆盖度变化的规律.研究发现O的稳定吸附位为3重面心立方(fcc)洞位，O在fcc洞位的吸附能对覆盖度比较敏感，其值随着覆盖度的增加而减小；O诱导Au(111)表面功函数的变化量与覆盖度成近线性关系，原因是Au表面电子向O偏移，形成表面偶极子；O—Au的相互作用形成成键态和反键态，且反键态都被占据，造成O—Au键很弱，O吸附能较小. 关键词： 表面吸附 Au(111)表面 密度泛函理论 电子特性     

Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.     

The Linear Fokker-Planck Equation for the Ornstein-Uhlenbeck Process as an (Almost) Nonlinear Kinetic Equation for an Isolated N-Particle System

It is long known that the Fokker-Planck equation with prescribed constant coefficients of diffusion and linear friction describes the ensemble average of the stochastic evolutions in velocity space of a Brownian test particle immersed in a heat bath of fixed temperature. Apparently, it is not so well known that the same partial differential equation, but now with constant coefficients which are functionals of the solution itself rather than being prescribed, describes the kinetic evolution (in the N→∞ limit) of an isolated N-particle system with certain stochastic interactions. Here we discuss in detail this recently discovered interpretation. An erratum to this article can be found at     

Linear and nonlinear optical susceptibilities of orthorhombic rare earth molybdates RE2(MoO4)3

The dielectric responses (i.e. the refractive indices and the second order nonlinear susceptibilities) of all orthorhombic rare earth molybdates have been studied on the basis of the relationship between dielectric responses and the average atomic number of constituent atoms of crystals. Both the linear and second order nonlinear optical responses at 1.064 μm decrease with increasing atomic number from La to Lu.     

Frequency dependence of ionic conductivity and dielectric relaxation studies in Na3H(SO4)2 single crystal

Electrical impedance measurements of Na₃H(SO₄)₂ were performed as a function of both temperature and frequency. The electrical conductivity and dielectric relaxation have been evaluated. The temperature dependence of electrical conductivity reveals that the sample crystals transformed to the fast ionic state in the high temperature phase. The dynamical disordering of hydrogen and sodium atoms and the orientation of SO₄ tetrahedra results in fast ionic conductivity. In addition to the proton conduction, the possibility of a Na⁺ contribution to the conductivity in the high temperature phase is proposed. The frequency dependence of AC conductivity is proportional to ω^s. The value of the exponent, s, lies between 0.85 and 0.46 in the room temperature phase, whereas it remains almost constant, 0.6, in the high-temperature phase. The dielectric dispersion is examined using the modulus formalism. An Arrhenius-type behavior is observed when the crystal undergoes the structural phase transition.     

一维光学格子孤子的传输特性及控制研究

利用解析和数值方法研究了在具有横向折射率周期性调制的克尔型非线性介质中光学格子孤子的传输，得到了孤子参数的演化方程以及格子孤子的形成和稳定传输的条件.结果表明：当光束的入射角小于某临界角度时，光束可被类似波导形式的路径俘获而稳定传输，该临界角随折射率调制周期、调制深度的增加而增大，且光束越窄临界值越大.此外，线性空间啁啾虽然对光束传输的中心位置没有任何影响，但会导致光束发散从而破坏格子孤子的形成和稳定传输，对此提出了采用特定功率取值来补偿啁啾作用从而形成格子孤子的方案. 关键词： 光孤子 光学格子 光传输 矩方法     

掺钕聚甲基丙烯酸甲酯的光学特性

研究了制备的掺钕螯合物Nd(DBM)3Phen材料的吸收光谱、激发光谱、荧光光谱,应用Judd-Ofelt理论计算了该材料的强度参量．分析了钕离子激发态4F3／2的辐射寿命(631 μs)和4F3／2→4IJ′跃迁的受激发射截面和荧光分支比．     

Simulation of the nonlinear vibration of a string using the Cellular Automata based on the reflection rule

In this study, the nonlinear dynamic responses of a string are simulated using the Cellular Automata method based on the reflection rule. In the case of nonlinear systems, the velocity of wave propagation is not constant and depends on the amplitude. A new treatment of the dynamic time step is proposed for the Cellular Automata method considering the effect of the propagation velocity. As numerical examples, first, the dynamic responses of a string with linear characteristic are simulated using the Cellular Automata method. A typical resonance curve can be obtained. Second, the dynamic responses of a string with nonlinear characteristic are simulated using the proposed method. Some characteristic types of vibration can be obtained. It is concluded that the linear and nonlinear dynamic responses of a string may be obtained by simulation using the Cellular Automata method.     

两种方法制备ITO薄膜的红外特性分析

比较了用电束加热蒸发法和直流磁控溅射法制备的氧化锡铟(ITO)薄膜在红外波段的光学特性实验发现,通过直流磁控溅射在常温下制备的ITO薄膜在红外波段折射率稳定、消光系数小,比电子束加热蒸发制备的膜有较高的透过率在波长1550nm附近的透过率可达86%以上,消光系数约为004,方电阻最低为100Ω/□.