Internal Rotation of the Methyl Group in Cations of Toluene Derivatives

The potential of the internal rotation of the methyl group was determined for o-, m-, and p-fluorotoluene cations by pulsed field ionization spectroscopy. The potential of the internal rotational motion was also surveyed for other toluene derivative cations. It was found that the barrier height generally increases by ionization. The increase in the barrier height has been discussed in connection with the reduction of the internal rotational constant B by ionization. The geometrical distortion of the methyl group during the internal rotation has been suggested.     

1μm宽硅深槽刻蚀技术

介绍了硅深槽刻蚀的基本原理和影响刻蚀效果的几个主要工艺因素。提出了一种实现１μｍ宽的硅深槽刻蚀工艺途径；并给出了１μｍ宽、８μｍ深、侧壁及底部光洁的硅深槽刻蚀工艺条件。     

A molecular network model to describe the nonlinear viscoelastic behavior of polymers

A transient molecular network model is built to describe the nonlinear viscoelasticity of polymers by considering the effect of entanglement loss and regeneration on the relaxation of molecular strands. It is an extension of previous network theories. The experimental data on three thermoplastic polymers (ABS, PVC and PA6) obtained under various loading conditions are used to test the model. Agreement between the theoretical and experimental curves shows that the suggested model can describe successfully the relaxation behavior of the thermoplastic polymers under different loading rates by using relatively few relaxation modes. Thus the micromechanism responsible for strain-rate dependence of relaxation process and the origin of nonlinear viscoelasticity may be disclosed. The project supported by the National Natural Science Foundation of China and Doctorial Fund     

流延法制作AlN陶瓷基片工艺

研究出一种用流延法制作ＡＩＮ陶瓷基片的工艺。制备出性能优良的ＡＩＮ基片。经１６５０℃，保温２ｈ无压烧结制得的基片，其热导率达１３０Ｗ／（ｍ·Ｋ）、密度为３．３４ｇ／ｃｍ￣３，表面光滑平整，瓷体结构均匀，性能达到用干压法制备的同类基片的性能。     

强激光场下的双光子自电离理论

本文研究了包括二阶离化过程的强激光场下的双光子自电离。导出了光电子谱的解析表达式,并对一些特殊情况下的光电子谱进行了分析。     

核壳型铁钴纳米复合材料的制备及其性能

采用多元醇还原工艺和自组装技术,在微米级Fe粉表面包覆纳米Co粒子,一步法制备了一种具有核壳结构的复合磁性微球,用SEM表征了其相组成和形貌,用VSM测试了磁滞回线,初步研究了磁学性能。结果表明:用该法制备的核壳型Fe/Co纳米复合材料表面包覆致密,其比饱和磁化强度和矫顽力介于微米铁粉和纳米钴粉之间。     

Ba(Zr0.3Ti0.7)O3 铁电薄膜的制备

介绍了用溶胶-凝胶法(sol-gel)在Pt/Ti/SiO2/Si衬底和石英衬底上制备Ba(Zr0.3Ti0.7)O3铁电薄膜的基本原理、工艺过程及工艺特点;Sol-gel制备的Ba(Zr0.3Ti0.7)O3铁电薄膜表面平整、厚度均匀.     

Generalized 3G theorem and application to relativistic stable process on non-smooth open sets

Let G(x,y) and GD(x,y) be the Green functions of rotationally invariant symmetric α-stable process in Rd and in an open set D, respectively, where 0<α<2. The inequality GD(x,y)GD(y,z)/GD(x,z)?c(G(x,y)+G(y,z)) is a very useful tool in studying (local) Schrödinger operators. When the above inequality is true with c=c(D)∈(0,∞), then we say that the 3G theorem holds in D. In this paper, we establish a generalized version of 3G theorem when D is a bounded κ-fat open set, which includes a bounded John domain. The 3G we consider is of the form GD(x,y)GD(z,w)/GD(x,w), where y may be different from z. When y=z, we recover the usual 3G. The 3G form GD(x,y)GD(z,w)/GD(x,w) appears in non-local Schrödinger operator theory. Using our generalized 3G theorem, we give a concrete class of functions belonging to the non-local Kato class, introduced by Chen and Song, on κ-fat open sets. As an application, we discuss relativistic α-stable processes (relativistic Hamiltonian when α=1) in κ-fat open sets. We identify the Martin boundary and the minimal Martin boundary with the Euclidean boundary for relativistic α-stable processes in κ-fat open sets. Furthermore, we show that relative Fatou type theorem is true for relativistic stable processes in κ-fat open sets. The main results of this paper hold for a large class of symmetric Markov processes, as are illustrated in the last section of this paper. We also discuss the generalized 3G theorem for a large class of symmetric stable Lévy processes.     

On multiple integrals of special form

Multiple integrals generalizing the iterated kernels of integral operators are expressed as single integrals in the case of a special representation of the kernel (this is our theorem). Besides integral equations, Markov processes involve these integrals as well. As a consequence of the theorem, we obtain transition probability densities of certain Markov processes. As an illustration, we consider nine examples.