Sintered silver finite element modelling and reliability based design optimisation in power electronic module

This paper discusses the design for reliability of a sintered silver structure in a power electronic module based on the computational approach that composed of high fidelity analysis, reduced order modelling, numerical risk analysis, and optimisation. The methodology was demonstrated on sintered silver interconnect sandwiched between silicon carbide chip and copper substrate in a power electronic module. In particular, sintered silver reliability due to thermal fatigue material degradation is one of the main concerns. Thermo-mechanical behaviour of the power module sintered silver joint structure is simulated by finite element analysis for cyclic temperature loading profile in order to capture the strain distribution. The discussion was on methods for approximate reduced order modelling based on interpolation techniques using Kriging and radial basis functions. The reduced order modelling approach uses prediction data for the thermo-mechanical behaviour. The fatigue lifetime of the sintered silver interconnect and the warpage of the interconnect layer was particular interest in this study. The reduced order models were used for the analysis of the effect of design uncertainties on the reliability of the sintered silver layer. To assess the effect of uncertain design data, a method for estimating the variation of reliability related metrics namely Latin Hypercube sampling was utilised. The product capability indices are evaluated from the distributions fitted to the histogram resulting from Latin Hypercube sampling technique. A reliability based design optimisation was demonstrated using Particle Swarm Optimisation algorithm for constraint optimisation task consists of optimising two different characteristic performance metrics such as the thermo-mechanical plastic strain accumulation per cycle on the sintered layer and the thermally induced warpage.     

发射组件监控模块的设计

监控模块是发射组件的重要组成部分,主要用于状态采集和开关控制。监控模块可实现发射组件的数字量采集、模拟量采集和信息处理。同时,上位机可通过控制局域网(CAN)总线获取发射组件的工作信息,并实现射频开关控制。文中介绍了监控模块的功能和组成框图,并对硬件电路设计和软件设计作了详细介绍,对监控模块的设计提出了一些有益的建议。     

基于单片机和光电开关的通用计数器设计

At presrent, the photoelectric switch is more and more widely used in the industrial automation equipment.It can be finished counting industrial products by using the characteristic of the photoelectric switch which can detect the objects without touching them. This design uses the modular design method,including power-supply module, The photoelectric conversion module, optocoupler isolation circuit module, power off protection module, matrix keyboard module, counting module and The display module. It mainly uses 51 single-chip microcomputer to control the system,uses the keilC51 software to design program,uses the Proteus software to complete the simulation. Through the experiment, it proves the design is feasible.     

Geometrical design of thin film photovoltaic modules for improved shade tolerance and performance

Partial shading in photovoltaic modules is an important reliability and performance concern for all photovoltaic technologies. In this paper, we show how cell geometry can be used as a design variable for improved shade tolerance and performance in monolithic thin film photovoltaic modules (TFPV). We use circuit simulations to illustrate the geometrical aspects of partial shading in typical monolithic TFPV modules with rectangular cells, and formulate rules for shade tolerant design. We show that the problem of partial shading can be overcome by modifying the cell shape and orientation, while preserving the module shape and output characteristics. We discuss two geometrical designs with cells arranged in radial and spiral patterns, which (i) prevent the reverse breakdown of partially shaded cells, (ii) improve the overall power output under partial shading, and (iii) in case of spiral design, may additionally improve the module efficiency by reducing sheet resistance losses. We compare these designs quantitatively using realistic parameters and discuss the practical aspects for their implementation. Copyright © 2013 John Wiley & Sons, Ltd.     

Failure analysis of Cu(In,Ga)Se2 photovoltaic modules: degradation mechanism of Cu(In,Ga)Se2 solar cells under harsh environmental conditions

High‐temperature‐induced and humidity‐induced degradation behaviors were investigated through the failure analysis of encapsulated Cu(In,Ga)Se₂ (CIGS) modules and non‐encapsulated CIGS cells. After being exposed to high temperature (85 °C) for 1000 h, the efficiency loss of CIGS modules and the resistivities of the aluminum‐doped zinc oxide (AZO) layer, CIGS layer, and Mo layer were slightly increased. After damp heat (DH) testing (85 °C/85% RH), the efficiency of some modules decreased significantly accompanied by discoloration, and in these areas, the resistivity of the AZO layers increased markedly. The causes of degradation of CIGS cells after high temperature and DH tests were suggested through X‐ray photoelectron spectroscopy analysis. The high‐temperature‐induced degradation behaviors were revealed to be increases in series resistance of the CIGS cells, due to the adsorption of oxygen on the AZO, CIGS, and Mo layers. The degradation behavior after DH (85 °C/85% RH) exposure was caused by the adsorption of oxygen, as well as the generation of Zn(OH)₂ due to water molecules. In particular, the humidity‐induced degradation behavior in discolored CIGS modules was ascribed to the generation of Zn(OH)₂ and carboxylic acids in the AZO layer, due to a chemical reaction between the AZO, ethylene‐vinyl acetate copolymer, and water. Copyright © 2014 John Wiley & Sons, Ltd.     

基于MEMS传感器的无线位置跟踪控制仿真应用

针对嵌入式工业控制系统终端显示的需要,提出了一种基于微处理器R1610和LCD控制器SSD1963的液晶显示模块的设计方法。详细阐述了硬件接口电路的设计和控制软件的编程,重点介绍了R1610、SSD1963以及TFT液晶屏AT070TN83之间的硬件连接方法,分析了SSD1963液晶控制的使用方法以及针对液晶屏显示时序的系统设置。结合显示控制实例实现了图像在液晶屏上的显示,显示效果良好。该显示模块的设计具有一定的应用前景和参考价值。     

A monolithically integrated high‐efficiency Cu(In,Ga)Se2 mini‐module structured solely by laser

Monolithically integrated Cu(In,Ga)Se₂ mini‐modules were fabricated in order to reduce the width of patterning related dead area. The Cu(In,Ga)Se₂ layers were prepared on soda‐lime glasses using the multistage process at low substrate temperature below 500 °C. A picosecond laser with a wavelength of 532 nm was used for all of the structuring processes (P1, P2, and P3) for the monolithic integration. A “lift‐off” type structuring was applied for P1 and P3, and an “ablation” type was for P2. The laser structuring was optimized to be minimizing the dead area width, and the width of about 70 µm was successfully achieved. A mini‐module, in which the optimized structuring processes were applied for the integration, demonstrated a certified efficiency of 16.6%. Copyright © 2015 John Wiley & Sons, Ltd.     

Demonstration of the monolithic interconnection on CIS solar cells by picosecond laser structuring on 30 by 30 cm2 modules

In this paper, we present the selective structuring of all three patterns (P1, P2 and P3) of a monolithic interconnection of CIS (Cu(In,Ga)(S,Se)₂) thin film solar cells by picosecond laser pulses at a wavelength of 1064 nm. We show results for single pulse ablation threshold values and line scribing of molybdenum films on glass (P1), CIS on molybdenum (P2) and zinc oxide on CIS (P3). The purposes of these processes are the p‐type isolation (P1), cell interconnect (P2) and n‐type isolation (P3), which are required for complete cell architecture. The half micron thick molybdenum back electrode can be structured with a process speed of more than 15 m/s at about 15 W average power without detectable residues and damage by direct induced laser ablation from the back side (P1). The CIS layer can be structured selectively down to the molybdenum at process speeds up to 1 m/s at about 15 W average power, due to the precision of direct laser ablation in the ultrashort pulse regime (P2). The ZnO front electrode layer is separated by clean trenches with straight side walls at process speeds of up to 15 m/s at about 10 W average power, as a result of indirect induced laser ablation (P3). A validation of functionality of all processes is demonstrated on CIS solar cell modules (30 × 30 cm²). By replacing one state‐of‐the‐art process by a picosecond laser process at a time, solar efficiencies could be increased for P1 and P2 and stayed on a similar level for P3. After an optimization of the patterning processes in the R&D pilot line of AVANCIS, we achieved a new record efficiency for an all‐laser‐patterned CIS solar module: 14.7% as best value for the aperture area efficiency of a 30 × 30 cm² sized CIS module was reached. Copyright © 2014 John Wiley & Sons, Ltd.     

Performance enhancement of multicrystalline silicon solar cells and modules using double‐layered SiNx:H antireflection coatings

Silicon nitride coating deposited by the plasma‐enhanced chemical vapor deposition method is the most widely used antireflection coating for crystalline silicon solar cells. In this work, we employed double‐layered silicon nitride coating consisting of a top layer with a lower refractive index and a bottom layer (contacting the silicon wafer) with a higher refractive index for multicrystalline silicon solar cells. An optimization procedure was presented for maximizing the photovoltaic performance of the encapsulated solar cells or modules. The dependence of their photovoltaic properties on the thickness of silicon nitride coatings was carefully analyzed. Desirable thicknesses of the individual silicon nitride layers for the double‐layered coatings were calculated. In order to get statistical conclusions, we fabricated a large number of multicrystalline silicon solar cells using the standard production line for both the double‐layered and single‐layered antireflection coating types. On the cell level, the double‐layered silicon nitride antireflection coating resulted in an increase of 0.21%, absolute for the average conversion efficiency, and 1.8 mV and 0.11 mA/cm² for the average open‐circuit voltage and short‐circuit current density, respectively. On the module level, the cell to module power transfer factor was analyzed, and it was demonstrated that the double‐layered silicon nitride antireflection coating provided a consistent enhancement in the photovoltaic performance for multicrystalline silicon solar cell modules than the single‐layered silicon nitride coating. Copyright © 2015 John Wiley & Sons, Ltd.     

通过赝反伽伐尼反应实现金纳米粒子模块替换

通过可控的方式精确调控纳米粒子的结构仍是一个富有挑战性和鼓舞人心的课题.尽管单原子或两、三个金属原子的精细调控已经在金纳米粒子中实现,涉及三个以上金属原子的取代（模块取代）还没有报道.本工作报道了环己硫醇配体保护的Au₄₈（CHT）₂₆的合成及其通过赝反伽伐尼过程的模块取代.单晶结构揭示模块取代的产物与母体团簇共用一个相似的Au₃₁（CHT）₁₂主体,但剩余部分不同（Au₆（CHT）₁₁ vs.Au₁₆（CHT）₁₄）.一个有趣的发现是模块取代抑制了Au₄₈（CHT）₂₆的光热过程,却增强了它的发射,赋予了所合成团簇更好的双（多）功能应用潜力.光热效应的减弱和发射的增强也暗示了这两种作用能够彼此至少部分转化,对于研究这两种效应之间的相互影响也具有重要的启示.