绿色环保化学机械抛光液的研究进展

原子级加工制造是实现半导体晶圆原子尺度超光滑表面的有效途径.作为大尺寸高精密功能材料的原子级表面制造的重要加工手段之一,化学机械抛光(chemical mechanical polishing,CMP)凭借化学腐蚀和机械磨削的耦合协同作用,成为实现先进材料或器件超光滑无损伤表面平坦化加工的关键技术,在航空、航天、微电子等众多领域得到了广泛应用.然而,为了实现原子层级超滑表面的制备,CMP工艺中常采用的化学腐蚀和机械磨削方法需要使用具有强烈腐蚀性和高毒性的危险化学品,对生态系统产生了不可逆转的危害.因此,本文以绿色环保高性能抛光液作为对象,对加工原子量级表面所采用的化学添加剂进行分类总结,详尽分析在CMP过程中化学添加剂对材料表面性质调制的作用机理,为在原子级尺度下改善表面性质提供可参考的依据.最后,提出了CMP抛光液在原子级加工研究中面临的挑战,并对未来抛光液发展方向作出了展望,这对原子尺度表面精度的进一步提升具有深远的现实意义.     

固结磨料抛光K9光学玻璃的工艺实验研究

采用一种亲水性固结磨料抛光垫(FAP),通过单因素实验法,系统地研究了抛光K9光学玻璃过程中抛光时间、偏心距、压力、转速、抛光液流量及pH值等工艺参数对材料去除速率(MRR)和表面粗糙度的影响规律,并对实验结果进行了解释。结果表明:随着抛光时间的延长,K9光学玻璃的MRR逐渐呈下降趋势;在抛光20min时,MRR达最大值310nm/min,且表面粗糙度降至最低值为2.73nm;选择较大的偏心距和碱性抛光液环境均有利于提高MRR;随着抛光盘转速的升高,MRR将显著增大。而在一定范围内,抛光压力和抛光液流量对MRR的影响不大。     

基于磨粒运动轨迹的硅片化学机械抛光材料去率研究

硅片化学机械抛光（CMP）是机械作用与化学作用相结合的技术,硅片表面的化学反应层主要是由抛光液中磨料的机械作用去除,磨粒对硅片表面的摩擦和划擦对硅片表面材料的去除起着重要作用。磨粒在硅片表面上的划痕长度直接影响硅片表面的材料去除率。本文首先在实验结果的基础上分析了硅片CMP过程中磨粒的分布形式,然后根据运动学和接触力学理论,分析了硅片、磨粒及抛光垫三者之间的运动关系,根据磨粒在硅片表面上的运动轨迹长度,得出了材料去除率与抛光速度之间的关系,该分析结果与实验结果一致,研究结果可为进一步理解硅片CMP的材料去除机理提供理论指导。     

Cleaning method of InSb [111] B of n-InSb [111] A/B for the growth of epitaxial layers by liquid phase epitaxy

The crystal structure of InSb[111]A/B surfaces shows that this structure is polarized.This means that the surfaces of InSb[111]A and InSb[111]B contain two different crystallized directions and they have different physical and chemical properties.Experiments were carried out on the InSb[111]A/B surfaces,showing that tartaric acid etchant could create a very smooth surface on the InSb[111]B without any traces of oxides and etch pit but simultaneously create etch pit on InSb[111]A surfaces.After lapping and polishing,some particles remained on the InSb[111]B surface,they could not be removed easily by standard cleaning process and if these particles remain on the surface of the substrate,the growth layer was not uniform and some island-like regions were observed.The purpose of this work is to remove these particles on the InSb[111]B surface.Some morphology images of both surfaces,InSb[111]A/B,will be presented.     

Analysis of flow between a wafer and pad during CMP processes

In this paper, we summarize the development of a numerical model for the chemical mechanical planarization (CMP) process and experimentally investigate the effects of pad conditioning on slurry transport and mixing. A simplified two-dimensional numerical model of slurry flow beneath a stationary wafer was developed to determine the pressure and shear stress beneath a wafer. The initial results indicate that in the hydrodynamic regime a positive upward pressure is exerted on the wafer. We also examined three cases to study pad effects on slurry transport; polishing with an Embossed Politex pad, an unconditioned IC1000 pad, and a conditioned IC1000 pad. Cab-O-Sperse SC1 slurry was used in a 1:1.5 dilution with water. Mixing data show that conditioning has a negligible effect on the rate of slurry entrainment and mixing; however, conditioning has a large effect on the thickness of the slurry layer between the wafer and pad. Conditioning was found to increase the slurry thickness by a factor of two. In addition the gradients in slurry age beneath the wafer were compared among the three cases. The IC1000 pads supported a gradient in the inner third of the wafer only, while the Embossed Politex pad showed a linear gradient across the wafer implying it retains pockets of unmixed slurry in the embossed topography.     

聚氨酯抛光片在透镜高效生产中的应用

本文对聚氨酯抛光片的性能、特点作了概要介绍，在透镜生产中应用聚氨酯抛光片单块加工及成盘加工的方法分别作了讨论，以及众多的工艺因素作了较为详细的分析，介绍了常出现的光圈异常现象的排除方法，从而达到稳定、高效的目的。     

化学机械抛光后板刷擦洗清洗(英文)

板刷擦洗是一种在化学机械抛光后清洗中常用的方法。它可以非常有效地把研磨剂颗粒从已抛光的晶圆表面去除掉。在氧化硅化学机械抛光的清洗工艺中,去离子水(或者稀释的氢氧化氨)是刷洗过程中常用的化学品起到的作用及刷洗的机械力对去除氧化硅研磨剂颗粒时所起的作用。     

准球心弧线摆动高速抛光用的高纯氧化铈

本文阐述了准球心弧线摆动高速抛光中与聚氨基甲酸乙酯抛光模相匹配的高纯氧化铈抛光粉经烧制处理后的抛光效率,添加剂的作用以及回收处理。     

能动抛光磨盘的有限元法分析

 能动磨盘在光学抛光时随磨盘移动位置和旋转角度不同而产生不同的变形以实时与大口径被抛光工件表面实现良好的吻合。模拟了能动磨盘的工作过程，探讨了用于光学抛光的可行性。以加工直径1.5m，f1/2的抛物面光学元件为例，用有限元法对能动磨盘能够产生的变形进行了仿真计算，结果表明能动磨盘能够以较高精度产生旋转对称或非对称的二次曲面。     

用缩醛树脂制作光学抛光片

本文讨论了缩醛树脂一般性质和特性，及其在制作光学抛光片中的应用。