铝薄膜CMP影响因素分析

提出了在碱性抛光液中铝薄膜化学机械抛光的机理模型,对抛光液的pH值、磨料、氧化剂浓度对过程参数的影响做了一些试验分析。试验结果表面粗糙度的铝薄膜所需的最优化CMP过程参数:硅溶胶粒径为15～20nm,pH值为10.8～11.2,氧化剂浓度为2.5%～3%。     

Characterization and optimization of copper chemical mechanical planarization

The feature scale planarization of the copper chemical mechanical planarization (CMP) process has been characterized for two copper processes using Hitachi 430-TU/Hitachi T605 and Cabot 5001/Arch Cu10K consumables. The first process is an example of an abrasive-free polish with a high-selectivity barrier slurry, while the second is an example of a conventional abrasive slurry with a low-selectivity barrier slurry. Copper fill planarization has been characterized for structures with conformal deposition as well as with bumps resulting from bottom-up fill. Dishing and erosion were characterized for several structures after clearing. The abrasive-free polish resulted in low sensitivity to overpolish and low saturation levels for dishing and erosion. Consequently, this demonstrated superior performance when compared to the International Technology Roadmap for Semiconductors (ITRS) 2000 roadmap targets for planarization. While the conventional slurry could achieve the 0.13-μm technology node requirements, the abrasive-free polish met the planarization requirements beyond the 0.10-μm technology node.     

激光抛光技术的发展与展望

介绍激光抛光技术的发展历史,阐明激光抛光的应用现状及未来的发展前景,论述了激光抛光的工艺特点和作用机理,将激光抛光技术与其它抛光技术进行了全面的对比,指出激光抛光的优势及其存在的问题。     

NMR investigation of concentrated alumina and silica slurries

The longitudinal relaxation times (T₁) of water in concentrated silica and alumina slurries were measured as a function of solids content. It was shown that the results could be fit very well with a two-phase fast-exchange model between free and surface-bound water. As expected, values of T₁ for bound water were in the order of 20–2000 times lower than that for free water, indicating a higher effective viscosity of the surface-bound water. The strength of the interaction depended on the particular surface, and all of the aluminas examined interacted more strongly with water than the two silicas studied, which themselves differed considerably. The chemical mechanical polishing (CMP) removal rate of tantalum by silica slurries was shown to be directly correlated with the interaction parameters, derived from the NMR relation times rather than with total surface hydroxyl group concentration.     

Chemical mechanical polishing of polymer films

Strategies to reduce capacitance effects associated with shrinking integrated circuit (IC) design rules include incorporating low resistivity metals and insulators with low dielectric values, or “low-κ” materials. Using such materials in current IC fabrication schemes necessitates the development of reliable chemical mechanical polishing (CMP) processes and process consumables tailored for them. Here we present results of CMP experiments performed on FLARE™ 2.0 using a specialized zirconium oxide (ZrO₂) polishing slurry. FLARE™ 2.0 is a poly(arylene) ether from AlliedSignal, Inc. with a nominal dielectric constant of 2.8. In addition, we provide insight into possible removal mechanisms during the CMP of organic polymers by examining the performance of numerous abrasive slurries. Although specific to a limited number of polymers, the authors suggest that the information presented in this paper is relevant to the CMP performance of many polymer dielectric materials.     

水合醋酸铈直接热分解制备超细氧化铈及其抛光性能

Ultra fine ceria was prepared by calcining hydrate cerium acetate. The effects of pyrolysis temperature on the particle size, morphology, specific surface area and loose packing density of ceria were investigated, and the removal rate of optical glasses polishing by ceria was determined. The results show that with the increase of pyrolysis temperature, the loose deposit density and crystallinity increases and the specific surface area decreases, however, the particle size decreases firstly and then increases, the minimum medium particle size D₅₀ is 0.47 μm at pyrolysis temperature of 1 000 ℃. The SEM images of ceria prepared by the decomposition at 800 ℃ or at 1 100 ℃ show porous powders or quasi-sphere small particles with loosely agglomeration, respectively. It was found that the removal rate varied with pyrolysis temperature in preparation of ceria and the property of glass polished. The removal rate for three kinds of glasses was in the order of ZF7> F1> K9, and the maximum value appeared at around 1 000 ℃ for ZF7 and F1, and at around 1 100 ℃ for K9.     

优化全日制化学教育硕士培养模式的探讨

全日制教育硕士（学科教学·化学）研究生培养是一个具有挑战性的、全新的研究课题。从"目标定位""课程优化"和"实践提升"3个方面对化学教育硕士培养进行探讨。在"目标定位"上应培养化学教育硕士具有较强的化学课堂教学能力和教研能力，在"课程优化"上，应优化更具功能化和结构化的课程体系，在"实践提升"上应搭建基于科学态磨课的全类型、全环节的实践平台。     

能动抛光磨盘的变形实验研究

 能动抛光磨盘实时产生不同的表面变形，在对大口径非球面光学元件进行精磨和抛光时实现与工件表面良好的大尺寸吻合，可以消除传统光学加工采用小尺寸磨头时带来的高频残余误差并提高加工效率。以加工直径1.3m左右，F/2的抛物面光学元件为例，对能动磨盘在不同离轴度时能够产生的变形进行了计算和实验。结果表明，能动磨盘能够以较高精度产生旋转对称或非对称的抛物面形状。对能动磨盘产生变形后的残余误差进行了分析。     

高精度中小11径非球面修抛技术研究

为实现高精度中小口径非球面的加工，介绍了一种非球面修抛技术。基于Preston假设，将抛光过程描述成一个线性方程，计算得到材料的去除量与抛光时间、抛光压力和零件转速之间的函数关系。设计了整体修抛法和环带修抛法两种方法，在数控抛光的基础上，对口径为Ф117mm的凹抛物面和口径为Ф17mm凸双曲面进行修抛，修抛后非球面的面形精度PV值为0．184μm，RMS均小于0．032μm，达到了工程化应用要求，实现了中小口径非球面的高精度加工。     

碱性铜粗抛液中氧化剂对化学机械平坦化的影响

针对不合腐蚀抑制剂苯并三氮唑(BTA)的碱性铜粗抛液,通过对3英寸(1英寸=2.54 cm)铜片上的动态抛光速率和静态腐蚀速率的研究来模拟评估氧化剂对晶圆表面平坦化的影响.在12英寸铜镀膜片和TM1图形片上分别研究氧化剂体积分数对表面平坦化的影响.实验结果表明:动态抛光速率和静态腐蚀速率均随着氧化剂体积分数的增加先逐渐增大,达到最大值,然后下降,趋于平缓.片内非均匀性和剩余高低差均随H2O2体积分数的增加,先呈下降趋势,后缓慢上升.当氧化剂体积分数为3％时,动态去除速率(vRR)为398.988 nm/min,静态腐蚀速率vER为6.834 nm/min,vRR/vER比值最大,片内非均匀性最小为3.82％,台阶高低差最小为104.6 nm/min,此时晶圆片有较好的平坦化效果.