宽带综合IP网的MPLS技术及其应用

多协议标记交换（MPLS）技术是综合利用网络第二层交换技术的有效性和第三层IP路由的灵活性等优点而产生的多层交换技术。通过在传统的IP包里加入标记，使路由转发依赖于标记，大大地提高IP包的转发速度，同时可使传统IP网络具有服务质量（QoS）能力。现主要分析MPLS体系结构，指出MPLS的一些应用。     

二单元DPCA在机载相控阵雷达AMTI中的应用

二单元偏置相位中心天线技术 (DPCA)在机载相控阵雷达自适应动目标指示 (AMTI)中占有重要地位 ,其原理在很多文献中都有讨论。文中主要提出了将二单元DPCA应用到机载相控阵雷达的具体方法和实验步骤 ,针对接收数据是M×N矩阵的情况 ,分析了数据降维变换的具体过程 ,并从仿真结果中得到有效性证明。该方法对DPCA在实际工程中的应用具有重要参考价值     

Platinum Binuclear Complexes as Phosphorescent Dopants for Monochromatic and White Organic Light‐Emitting Diodes

Efficient blue‐, green‐, and red‐light‐emitting organic diodes are fabricated using binuclear platinum complexes as phosphorescent dopants. The series of complexes used here have pyrazolate bridging ligands and the general formula C^∧NPt(μ‐pz)₂PtC^∧N (where C^∧N = 2‐(4′,6′‐difluorophenyl)pyridinato‐N,C^2′, pz = pyrazole ( 1 ), 3‐methyl‐5‐tert‐butylpyrazole ( 2 ), and 3,5‐bis(tert‐butyl)pyrazole ( 3 )). The Pt–Pt distance in the complexes, which decreases in the order 1 > 2 > 3 , solely determines the electroluminescence color of the organic light‐emitting diodes (OLEDs). Blue OLEDs fabricated using 8 % 1 doped into a 3,5‐bis(N‐carbazolyl)benzene (mCP) host have a quantum efficiency of 4.3 % at 120 Cd m^–2, a brightness of 3900 Cd m^–2 at 12 V, and Commission Internationale de L'Eclairage (CIE) coordinates of (0.11, 0.24). Green and red OLEDs fabricated with 2 and 3 , respectively, also give high quantum efficiencies (～ 6.7 %), with CIE coordinates of (0.31, 0.63) and (0.59, 0.46), respectively. The current‐density–voltage characteristics of devices made using dopants 2 and 3 indicate that hole trapping is enhanced by short Pt–Pt distances (< 3.1 Å). Blue electrophosphorescence is achieved by taking advantage of the binuclear molecular geometry in order to suppress dopant intermolecular interactions. No evidence of low‐energy emission from aggregate states is observed in OLEDs made with 50 % 1 doped into mCP. OLEDs made using 100 % 1 as an emissive layer display red luminescence, which is believed to originate from distorted complexes with compressed Pt–Pt separations located in defect sites within the neat film. White OLEDs are fabricated using 1 and 3 in three different device architectures, either with one or two dopants in dual emissive layers or both dopants in a single emissive layer. All the white OLEDs have high quantum efficiency (～ 5 %) and brightness (～ 600 Cd m^–2 at 10 V).     

光电设备电子机柜布线工艺研究

作为信号和电能载体的导线，同时也是噪声的载体和外来噪声侵入设备的媒体。描述了噪声通过导线侵入设备内部的方式，通过降低噪声的途径确定了机柜布线的原则，介绍了布线的要求和方法，最后提出了用布线槽布线的建议。     

雷达间的电磁兼容性判决

通过对雷达信号(或干扰)处理过程的分析,对发现概率和虚警概率的定义作了合理的扩展,使二者可以直接用于雷达间的电磁兼容判定,并在此基础上建立了雷达间电磁兼容判决模型.这种基于经典雷达信号检测理论的模型能客观、真实地反映出雷达间的干扰情况,并且可以应用在雷达间电磁兼容性预测模型中.     

可信计算与可信网络

论文对主流的可信计算技术——TCPA和NGSCB进行了分析,并对可信计算平台(TCP)进行了研究,对基于可信计算的可信网络的三个基本属性进行了分析和研究,最后介绍了可信网络的发展现状。     

A call admission and rate control scheme for multimedia support over IEEE 802.11 wireless LANs

Quality of service (QoS) support for multimedia services in the IEEE 802.11 wireless LAN is an important issue for such WLANs to become a viable wireless access to the Internet. In this paper, we endeavor to propose a practical scheme to achieve this goal without changing the channel access mechanism. To this end, a novel call admission and rate control (CARC) scheme is proposed. The key idea of this scheme is to regulate the arriving traffic of the WLAN such that the network can work at an optimal point. We first show that the channel busyness ratio is a good indicator of the network status in the sense that it is easy to obtain and can accurately and timely represent channel utilization. Then we propose two algorithms based on the channel busyness ratio. The call admission control algorithm is used to regulate the admission of real-time or streaming traffic and the rate control algorithm to control the transmission rate of best effort traffic. As a result, the real-time or streaming traffic is supported with statistical QoS guarantees and the best effort traffic can fully utilize the residual channel capacity left by the real-time and streaming traffic. In addition, the rate control algorithm itself provides a solution that could be used above the media access mechanism to approach the maximal theoretical channel utilization. A comprehensive simulation study in ns-2 has verified the performance of our proposed CARC scheme, showing that the original 802.11 DCF protocol can statically support strict QoS requirements, such as those required by voice over IP or streaming video, and at the same time, achieve a high channel utilization. Hongqiang Zhai received the B.E. and M.E. degrees in electrical engineering from Tsinghua University, Beijing, China, in July 1999 and January 2002 respectively. He worked as a research intern in Bell Labs Research China from June 2001 to December 2001, and in Microsoft Research Asia from January 2002 to July 2002. Currently he is pursuing the PhD degree in the Department of Electrical and Computer Engineering, University of Florida. He is a student member of IEEE. Xiang Chen received the B.E. and M.E. degrees in electrical engineering from Shanghai Jiao Tong University, Shanghai, China, in 1997 and 2000, respectively, and the Ph.D. degree in electrical and computer engineering from the University of Florida, Gainesville, in 2005. He is currently a Senior Research Engineer at Motorola Labs, Arlington Heights, IL. His research interests include resource management, medium access control, and quality of service (QoS) in wireless networks. He is a Member of Tau Beta Pi and a student member of IEEE. Yuguang Fang received a Ph.D degree in Systems and Control Engineering from Case Western Reserve University in January 1994, and a Ph.D degree in Electrical Engineering from Boston University in May 1997. From June 1997 to July 1998, he was a Visiting Assistant Professor in Department of Electrical Engineering at the University of Texas at Dallas. From July 1998 to May 2000, he was an Assistant Professor in the Department of Electrical and Computer Engineering at New Jersey Institute of Technology. In May 2000, he joined the Department of Electrical and Computer Engineering at University of Florida where he got the early promotion with tenure in August 2003 and has been an Associate Professor since then. He has published over one hundred (100) papers in refereed professional journals and conferences. He received the National Science Foundation Faculty Early Career Award in 2001 and the Office of Naval Research Young Investigator Award in 2002. He is currently serving as an Editor for many journals including IEEE Transactions on Communications, IEEE Transactions on Wireless Communications, IEEE Transactions on Mobile Computing, and ACM Wireless Networks. He is also actively participating in conference organization such as the Program Vice-Chair for IEEE INFOCOM’2005, Program Co-Chair for the Global Internet and Next Generation Networks Symposium in IEEE Globecom’2004 and the Program Vice Chair for 2000 IEEE Wireless Communications and Networking Conference (WCNC’2000).     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.     

从PZT体系看无铅压电陶瓷的可能应用

总结了主要以(Bi0.5Na0.5)TiO3和NaNbO3为基的无铅压电陶瓷的性能，以Pb(Ti，Zr)TiO3基二元系、三元系压电陶瓷的性能与应用为参考，分析了无铅压电陶瓷可能的器件应用。此外，还对拓宽无铅压电陶瓷应用需要改进的性能提出了建议。     

自对准双扩散MOS器件的阈值电压分析

文章提出了精确描述自对准双扩散MOS器件阀值电压的解析模型，给出了其沟道中杂质的二维分布和源结耗尽层宽度的计算方法；分析了边缘效应对氧化层电容的影响，借助电荷共事模型，建立了反映非均匀沟道中耗尽层电荷变化及其对开启电压影响的阀值电压模型；同时，借助二维仿真器，计算出自对准双扩散MOS器件的阈值电压，其值与解析值相吻合。