向列相液晶弹性各向异性诱导液晶盒产生漏光的研究

为了阐述具有体缺陷结构的向列相液晶盒在暗态出现漏光的原因,以及边界锚定条件对漏光的影响,首先,建立了3个向列相液晶盒模型,它们具有不同的初始指向矢排布。接着,基于Landau-de Gennes理论,通过对指向矢场的缺陷动力学计算,得到液晶盒截面内平衡态的指向矢分布。最后,使用琼斯矩阵法将该截面内的指向矢分布以透过率的形式表示出来。模拟结果显示,在无外场条件下,当向列相液晶的弹性常数满足L2/L1≥1(K22/K11≤2/3)时,具有体缺陷结构的液晶盒展现出了自发的扭曲结构,导致了漏光的出现。且漏光强度随着缺陷结构和边界条件的不同而不同。本文模型很好地解释了体缺陷造成液晶盒在暗态出现漏光的原因,且模拟结果与工业生产过程中观察到的现象是一致的。     

基于PZT传感器的管道扭转模态激励效果研究

导波激励模态单一性与衰减特性是导波激励效果的重要指标。采用PZT传感器,在建立基于PZT-5材料传感器并置于管道一端均匀对称分布的导波激励系统的基础上,以模态单一性与降低衰减特性为目标,研究了在低频段内模态特性以及传感器对T(0,1)模态的影响,得出了激励T(0,1)模态的最优激励方案。     

管道检测对IRST系统探测与虚警概率的影响

探测概率、虚警概率是衡量红外搜索跟踪系统性能的重要指标,其大小由系统硬件水平、检测算法设计等因素决定。通过分析影响红外搜索跟踪系统探测概率、虚警概率的因素,建立了管道检测与探测概率、虚警概率关系模型,研究了序列图像检测中管道检测对系统探测概率、虚警概率的影响。通过仿真分析了实验结果,系统总检测概率与总虚警概率分别随单帧检测概率与单帧虚警概率的增加而增加,在管道长度相同的情况下,总检测概率和总虚警率都将随需检测帧数的增大而减小。     

高压绝缘子沿面放电过程泄漏电流的信号特征

针对目前高压污秽绝缘子闪络风险评估中虚警率高,结果不够准确的现状,本文重点考察了泄漏电流包络线信号的均值,方差,偏度,峰度四项指标和沿面放电状态之间的关系,通过利用求积法实现多个指标信息的综合后发现:综合指标较之各单一指标,在实现闪络风险评估时,可以有效降低虚警误报的风险,因而更加适合去实现闪络风险的综合评判。     

LTE 毫微微蜂窝基站射频收发器的设计与实现*

针对近年来LTE 毫微微蜂窝基站商用加快和规模扩大,减小LTE 毫微微蜂窝基站的尺寸和降低其成 本就变得越来越重要。在保证基站性能的基础上,如何设计无线电收发器以减少尺寸和成本成为很大的挑战。设 计了一种应用于LTE 毫微微蜂窝基站中的低成本MIMO 射频收发器。分析了发射机和接收机的各项需求指标,提 出了块级的射频参数。据此,射频收发器被系统地分为几个子模块,分别设计了这些不同的子模块,同时区分各个 子模块的特点。所得到的测定结果表明,充分集成的射频收发器的设计不仅具有小尺寸,也符合LTE 毫微微基站的 各项指标。     

硅单粒子位移损伤多尺度模拟研究

本文结合分子动力学方法和动力学蒙特卡罗方法, 研究了单个粒子入射硅引起的位移损伤缺陷的产生和演化过程; 基于Shockley-Read-Hall理论计算了单个粒子入射引起的位移损伤缺陷导致的泄漏电流增加及其演化过程, 比较了缺陷退火因子与泄漏电流退火因子之间的差异, 并将计算结果与实验值进行了对比. 结果表明, 计算泄漏电流时, 仅考虑一种缺陷的情况下缺陷退火因子与泄漏电流退火因子相同, 考虑两种缺陷类型情况下二者在数值上有所区别, 但缺陷退火因子仍能在一定程度上反映泄漏电流的退火行为. 分子动力学模拟中采用Stillinger-Weber势函数和Tersoff势函数时缺陷退火因子和泄漏电流退火因子与实验结果一致, 基于Stillinger-Weber势函数的计算结果与实验值更为接近.     

环氧灌浆材料在莞惠城际轨道工程GZH-5标渗漏水治理中的应用

针对当前聚氨酯灌浆材料在渗漏水治理中存在的问题,提出了依靠堵水环氧灌浆材料和高渗透环氧灌浆材料进行渗漏水治理的新思路。环氧类灌浆材料既能够对混凝土裂缝等缺陷进行修复,也能够封堵渗漏水,希望修复后的缺陷能够保持和恢复混凝土结构的耐久性。     

高效AVS音频上下文位平面编码器设计

研究了AVS音频编码标准中上下文位平面编码算法,分析了编码算法的特点。通过对上下文平面编码算法的优化,提出了一种适合ASIC实现的硬件结构,通过合理设计二级流水线,能近似达到每时钟1比特矢量的编码速率,在保证编码速度前提下大幅降低了硬件资源。     

Cavitation onset caused by a dynamic pressure wave in liquid pipelines

When liquids flow in the pipelines, the onset of cavitation can be characterized by a variant of the Euler number known as the cavitation number (CN), which is based on the velocity and denoted by C in this paper. Conventionally, cavitation is considered to be induced when C ~ 1. However, experimental observations and several pipe bursts indicate that the CN may incorrectly predict the onset of cavitation. For example, when leakage occurs in the pipeline or a valve in the pipeline is opened, the resultant pressure loss generates a dynamic pressure wave with a small amplitude, which may lead to bubble formation, even though C ~ 1 is not satisfied. Hence, this paper proposes another CN based on the amplitude of the generated dynamic pressure wave, rather than the velocity, for ascertaining the onset of cavitation. The validity of the proposed CN was verified through experiments and a case study. The results indicated that the proposed CN can be effectively used for cavitation prediction induced by pressure fluctuations and for investigating phenomena such as pressure fluctuation, leakage, and corrosion in liquid pipelines, tanks, and pressure vessels, as well as the safety design of liquefied natural gas tanks and tankers.     

Gate-induced drain leakage (GIDL) in MFMIS and MFIS negative capacitance FinFETs

The gate induced drain leakage (GIDL) effect in negative capacitance (NC) FinFET is investigated. A Landau–Ginzburg–Devonshire equation (which considers the polarization gradient in ferroelectric material) is used to estimate the characteristics of the NC FinFET. Specifically, metal-ferroelectric-metal-insulator-semiconductor (MFMIS) and metal-ferroelectric-insulator-semiconductor (MFIS) NC FinFETs are compared, in order to figure out the effect of the internal metal layer on the GIDL effect. To analyze the impact of the polarization gradient on the GIDL effect in NC FinFET, a polarization gradient coefficient is varied. For MFMIS, the polarization gradient doesn't significantly affect the device performance. The subthreshold swing improves but the GIDL effect deteriorates because of the “uniform” NC effect in channel region. For MFIS, the device performance is explicitly affected by the polarization gradient. Smaller polarization gradients result in non-uniform NC effect in channel region, resulting in severe GIDL effects. On the other hand, higher polarization gradients alleviate GIDL effects.