In Situ Polymerizing Internal Encapsulation Strategy Enables Stable Perovskite Solar Cells toward Lead Leakage Suppression

Despite the outstanding power conversion efficiency (PCE) of perovskite solar cells (PSCs) achieved over the years, unsatisfactory stability and lead toxicity remain obstacles that limit their competitiveness and large-scale practical deployment. In this study, in situ polymerizing internal encapsulation (IPIE) is developed as a holistic approach to overcome these challenges. The uniform polymer internal package layer constructed by thermally triggered cross-linkable monomers not only solidifies the ionic perovskite crystalline by strong electron-withdrawing/donating chemical sites, but also acts as a water penetration and ion migration barrier to prolong shelf life under harsh environments. The optimized MAPbI₃ and FAPbI₃ devices with IPIE treatment yield impressive efficiencies of 22.29% and 24.12%, respectively, accompanied by remarkably enhanced environmental and mechanical stabilities. In addition, toxic water-soluble lead leakage is minimized by the synergetic effect of the physical encapsulation wall and chemical chelation conferred by the IPIE. Hence, this strategy provides a feasible route for preparing efficient, stable, and eco-friendly PSCs.     

Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study

This paper simulates a kind of new sub-50 nm n-type double gate MOS nanotransistors by solving coupled Poisson-Schrödinger equations in a self-consistent manner with a finite element method, and presents a systematic simulation-based study on quantum-mechanical effects, gate leakage current of FinFETs. The simulation results indicate that the deviation from the classical model becomes more important as the gate oxide, gate length and Fin channel width becomes thinner and the Fin channel doping increases. Gate tunneling current density reduces with the body thickness decreasing. Excessive scaling increases the gate current below Fin thickness of 5 nm. The gate current can be dramatically reduced beyond 10¹⁷ cm⁻³ with the Fin body doping increasing. In order to understand the influence of electron confinement, quantum mechanical simulation results are also compared with the results from the classical approach. Our simulation results indicate that quantum mechanical simulation is essential for the realistic optimization of the FinFET structure.     

基于小波变换的在役管线漏磁信号的去噪

采用漏磁法对在役管线进行无损检测时,所采集的信号中含有大量的噪声需要去除。文中介绍了小波变换的基本理论及检测信号和噪声信号在小波变换下的特性,说明了去除漏磁信号噪声的原理。在仿真试验中采用二阶双正交样条小波为小波函数,选用软硬阈值折中法和自适应阈值处理小波系数,结果表明将小波变换应用于在役管线漏磁检测中,能很好地去除噪声,提取出有用信号。     

变温C-V和传输线模型测量研究AlGaN/GaN HEMT温度特性

通过对异质结材料上制作的肖特基结构变温C-V测量和传输线模型变温测量,研究了蓝宝石衬底AlGaN/GaN异质结高电子迁移率晶体管的直流特性在25～200℃之间的变化,分析了载流子浓度分布、沟道方块电阻、欧姆比接触电阻和缓冲层泄漏电流随温度的变化规律.得出了器件饱和电流随温度升高而下降主要由输运特性退化造成,沟道泄漏电流随温度的变化主要由栅泄漏电流引起的结论.同时,证明了GaN缓冲层漏电不是导致器件退化的主要原因.     

InGaN/GaN多量子阱LED载流子泄漏与温度关系研究

通过测量光电流,直接观察了InGaN/GaN量子阱中载流子的泄漏程度随温度升高的变化关系。当LED温度从300K升高到360K时,在相同的光照强度下,LED的光电流增大,说明在温度上升之后,载流子从量子阱中逃逸的数目更多,即载流子泄漏比例增大。同时,光电流的增大在激发密度较低的时候更为明显,而且光电流随温度的增加幅度与激发光子的能量有关。用量子阱-量子点复合模型能很好地解释所观察到的实验现象。实验结果直接证明,随着温度的升高,InGaN/GaN量子阱中的载流子泄漏将显著增加,而且在低激发密度下这一效应更为明显。温度升高导致的载流子泄漏增多是InGaN多量子阱LED发光效率随温度升高而降低的重要原因。     

PUF‐based solutions for secure communications in Advanced Metering Infrastructure (AMI)

Advanced metering infrastructure (AMI) provides 2‐way communications between the utility and the smart meters. Developing authenticated key exchange (AKE) and broadcast authentication (BA) protocols is essential to provide secure communications in AMI. The security of all existing cryptographic protocols is based on the assumption that secret information is stored in the nonvolatile memories. In the AMI, the attackers can obtain some or all of the stored secret information from memories by a great variety of inexpensive and fast side‐channel attacks. Thus, all existing AKE and BA protocols are no longer secure. In this paper, we investigate how to develop secure AKE and BA protocols in the presence of memory attacks. As a solution, we propose to embed a physical unclonable function (PUF) in each party, which generates the secret values as required without the need to store them. By combining PUFs and 2 well‐known and secure protocols, we propose PUF‐based AKE and BA protocols. We show that our proposed protocols are memory leakage resilient. In addition, we prove their security in the standard model. Performance analysis of both protocols shows their efficiency for AMI applications. The proposed protocols can be easily implemented.     

A nature-inspired firefly algorithm based approach for nanoscale leakage optimal RTL structure

Optimization of leakage power is essential for nanoscale CMOS (nano-CMOS) technology based integrated circuits for numerous reasons, including improving battery life of the system in which they are used as well as enhancing reliability. Leakage optimization at an early stage of the design cycle such as the register-transfer level (RTL) or architectural level provides more degrees of freedom to design engineers and ensures that the design is optimized at higher levels before proceeding to the next and more detailed phases of the design cycle. In this paper, an RTL optimization approach is presented that targets leakage-power optimization while performing simultaneous scheduling, allocation and binding. The optimization approach uses a nature-inspired firefly algorithm so that large digital integrated circuits can be effectively handled without convergence issues. The firefly algorithm optimizes the cost of leakage delay product (LDP) under various resource constraints. As a specific example, gate-oxide leakage is optimized using a 45 nm CMOS dual-oxide based pre-characterized datapath library. Experimental results over various architectural level benchmark integrated circuits show that average leakage optimization of 90% can be obtained. For a comparative perspective, an integer linear programming (ILP) based algorithm is also presented and it is observed that the firefly algorithm is as accurate as ILP while converging much faster. To the best of the authors׳ knowledge, this is the first ever paper that applies firefly based algorithms for RTL optimization.     

Monofluoroalkene-Isostere as a 19F NMR Label for the Peptide Backbone: Synthesis and Evaluation in Membrane-Bound PGLa and (KIGAKI)3

Solid-state ¹⁹F NMR is a powerful method to study the interactions of biologically active peptides with membranes. So far, in labelled peptides, the ¹⁹F-reporter group has always been installed on the side chain of an amino acid. Given the fact that monofluoroalkenes are non-hydrolyzable peptide bond mimics, we have synthesized a monofluoroalkene-based dipeptide isostere, Val-Ψ[(Z)-CF=CH]-Gly, and inserted it in the sequence of two well-studied antimicrobial peptides: PGLa and (KIGAKI)₃ are representatives of an α-helix and a β-sheet. The conformations and biological activities of these labeled peptides were studied to assess the suitability of monofluoroalkenes for ¹⁹F NMR structure analysis.     

一种新的磁共振图像处理流水线的设计与实现

磁共振图像的重建、后处理及可视化是磁共振成像（MRI）系统的重要组成部分.本文开发了一个新的用于磁共振图像重建、后处理及可视化的开源框架YAP（Yet Another Pipeline），利用此框架可以方便地构建图像处理流水线.与现有的一些其他开源框架相比，本文开发的框架具有如下特点：（1）采用基于接口的设计，可使用基于接口的插件对流水线的功能进行扩展；（2）允许用户使用编写脚本的方式构建图像处理流水线，编辑与修改流水线都很方便；（3）支持带有分支结构的流水线，便于流水线的构建与调试.目前，该框架已经在商用系统中获得了应用.     

一种带改进开关和使用新型按比例缩小策略的10位120兆的流水线模数转换器

这篇文章介绍了一种精度为10比特,采样率为120兆的双通道流水线模数转换器(ADC)。这个模数转换器利用了体效应来改善开关的导通性能。在版图绘制中应用了一种新型的按比例缩小的策略。基于0.18μm的CMOS工艺,ADC的整个版图面积为2.05x1.83 mm2。在采样频率为120兆,输入信号频率为4.9兆的情况下,无杂散动态范围达到了74.32dB,信号噪音失真比为55.34dB,3伏供电电压下每通道的功耗为220毫瓦。