基于共振隧穿二极管的应力检测方法

共振隧穿二极管(RTD)具有微分负阻效应,且其共振隧穿的I-V特性随着廊力的变化而变化,这就是RTD的压阻效应.与半导体材料压阻效应的应用类似,RTD也可用于应力检测.文中研究了两种基于RTD的应力检测方法.在讨论频率-应力检测法的基础上提出了一种新颖的应力检测方法--惠斯通RTD电桥检测法.测试结果表明,基于惠斯通RTD电桥检测法得到的压阻灵敏度随偏置电压可调,町调范围达到三个数量级.     

共振隧穿二极管的力电耦合特性

报道了微结构中共振隧穿二极管(RTD)的压阻效应.分析并加工了四梁结构,其中RTD置于应力敏感区.沿[110]晶向和[110]晶向的应力导致RTD电流-电压曲线的改变,即介观压阻变化,尤其是在微分负阻(NDR)区.采用不同测试方法,研究了RTD的力电耦合特性,并获得了较相近的压阻系数为10-9Pa-1.     

MOS力敏运算放大器

利用MOSFET的压阻效应,本文提出了力敏运算放大器的概念、基本原理和设计思想.作为其应用之一,研制出一种新型集成压力传感器——集成MOS力敏运放压力传感器.这种压力传感器具有很高的压力响应灵敏度,可望在诸多领域有广泛应用.     

基于STM8S单片机的数字压力表的设计

压力是重要的热工参数之一,各种气体、液体的压力测量在生产生活、工业现场、科学实验等领域有着广泛的应用。这里采用STM8S单片机作为主控制单元,提出一种新型数字压力表的设计方法。介绍压阻式压力传感器的测量原理和系统的整体框架,并描述相应的软硬件设计的方法,特别是在软件方面的处理,包括压力采集和标定校准算法。实验结果显示,压力数据显示较为稳定,能够满足基本的精度要求。设计的数字压力表简单,易用,便于携带。     

CMOS compatible bulk micromachined silicon piezoresistive accelerometer with low off-axis sensitivity

The CMOS compatible bulk micromachined piezoresistive accelerometer presented in this paper consists of four flexures supporting a proof mass. Four pairs of boron-diffused piezoresistors are located at maximum stress points on the flexures near the proof mass and frame ends. Because of the opposite nature of stress at the two ends, these piezoresistors can be connected to form a Wheatstone bridge such that the off-axis responses are practically cancelled while the on-axis (along perpendicular to proof mass) response is maximized. The device is simulated using CoventorWare. In the fabrication process, dual-doped TMAH solution is used for wet anisotropic etching. The novelty of this etching process is that the bulk micromachining can be performed after aluminum metallization. The etched surface is also smooth. The fabrication is thus CMOS compatible. The accelerometer exhibits good linearity over 0-10 g.     

板上芯片固化后残余应力分布的有限元模拟

用有限元模拟研究了板上芯片固化后残余应力的分布.在FR4及陶瓷分别作基板的两种情况下,残余应力分布最显著的差异是等效应力分布不同.讨论了基板厚度及粘合胶厚度对残余应力的影响,表明采用陶瓷基板时增加粘合胶的厚度以降低残余应力来作为低应力封装的一种手段是可行的.硅压阻传感芯片测量结果与计算机模拟结果的比较表明,计算机模拟值与实验测量值比较接近,测量值的正负区间与模拟值的正负区间吻合     

新型MOS晶体管式压力传感器

在应力作用下，MOS晶体管的源漏电流的大小会随着沟道区所受应力大小而变化。基于MOS晶体管的这种力敏效应，采用晶体管和电阻构成压敏电桥，提出了一种新型的MOS晶体管式压力传感器。该器件在与目前最常用的压阻式压力传感器相比，继承了其制作工艺简单、稳定性和线性度好等优点，大幅提高了传感器灵敏度并降低了功耗，使得器件性能得到整体提高。     

基于石墨烯压阻效应的压力传感器研究进展

与传统的硅阻型压力传感器、陶瓷型压力传感器相比,石墨烯压力传感器具有测量灵敏度更高、测量范围更广的优点。对几种石墨烯压力传感器的研究进展进行综述。根据制作工艺的不同,将石墨烯压力传感器分为单层型和多层型。根据两大类型,列举最近六种石墨烯压力传感器的基本制作过程和测量范围、检测灵敏度等特性。根据六种石墨烯压力传感器的对比结果,得到单层型与多层型石墨烯压力传感器的不同工作特性及应用环境。针对单层型和多层型石墨烯传感器,分别提出提高性能的可行方案,对此类传感器的实际应用与推广具有一定的指导意义。     

Bioinspired Artificial Sensory Nerve Based on Nafion Memristor

Bioinspired artificial haptic neuron system has received much attention in the booming artificial intelligence industry for its broad range of high‐impact applications such as personal healthcare monitoring, electronic skins, and human–machine interfaces. An artificial haptic neuron system is designed by integrating a piezoresistive sensor and a Nafion‐based memristor for the first time in this paper. The piezoresistive sensor serves as a sensory receptor to transform mechanical stimuli into electric signals, and the Nafion‐based memristor serves as the synapse to further process the information. The pyramid‐structured sensor exhibits excellent sensitivity (6.7 × 10⁷ kPa^?1 in 1–5 kPa and 3.8 × 10⁵ kPa^?1 in 5–50 kPa) and durability (>7000 cycles), while the memristor realizes fundamental synaptic functions under low power consumption (10–200 pJ) and remains stable for over 10⁴ consecutive tests. The integrated system can detect tactile stimuli encoded with temporal information, such as the count, frequency, duration and speed of the external force. As a proof‐of‐concept, English characters recognition with high accuracy can be achieved on the system under a supervised learning method. This work shows promising potential in bioinspired sensing systems owing to the high performance, excellent durability, and simple fabrication procedure.