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Flexible Piezoelectric Touch Sensor by Alignment of Lead‐Free Alkaline Niobate Microcubes in PDMS 下载免费PDF全文
Daniella B. Deutz Neola T. Mascarenhas J. Ben J. Schelen Dago M. de Leeuw Sybrand van der Zwaag Pim Groen 《Advanced functional materials》2017,27(24)
A highly sensitive, lead‐free, and flexible piezoelectric touch sensor is reported based on composite films of alkaline niobate K0.485Na0.485Li0.03NbO3 (KNLN) powders aligned in a polydimethylsiloxane (PDMS) matrix. KNLN powder is fabricated by solid‐state sintering and consists of microcubes. The particles are dispersed in uncured PDMS and oriented by application of an oscillating dielectrophoretic alignment field. The dielectric constant of the composite film is almost independent of the microstructure, while upon alignment the piezoelectric charge coefficient increases more than tenfold up to 17 pC N?1. A quantitative analysis shows that the origin is a reduction of the interparticle distance to under 1.0 µm in the aligned bicontinuous KNLN chains. The temperature stable piezoelectric voltage coefficient exhibits a maximum value of 220 mV m N?1, at a volume fraction of only 10%. This state‐of‐the‐art value outperforms bulk piezoelectric ceramics and composites with randomly dispersed particles, and is comparable to the values reported for the piezoelectric polymers polyvinylidenefluoride and its random copolymer with trifluoroethylene. Optimized composite films are incorporated in flexible piezoelectric touch sensors. The high sensitivity is analyzed and discussed. As the fabrication technology is straightforward and easy to implement, applications are foreseen in flexible electronics such as wireless sensor networks and biodiagnostics. 相似文献
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(yxl)φ切压电石英谐振器振动模式分析 总被引:1,自引:0,他引:1
从压电方程,动力学方程入手,分析了(yxl)φ切石英谐振器的厚度切变振动,利用自由边界条件及串联与并联谐振时的电学条件,求出了并联谐振频率和串联振频率,讨论了实测频率与频率公式存在一定偏差的原因。 相似文献
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Mohammed Al‐Hubaishi Celal eken Ali Al‐Shaikhli 《International Journal of Communication Systems》2019,32(17)
Energy consumption is one of the most important design constraints when building a wireless sensor and actuator network since each device in the network has a limited battery capacity, and prolonging the lifetime of the network depends on saving energy. Overcoming this challenge requires a smart and reconfigurable network energy management strategy. The Software‐Defined Networking (SDN) paradigm aims at building a flexible and dynamic network structure, especially in wireless sensor networks. In this study, we propose an SDN‐enabled wireless sensor and actuator network architecture that has a new routing discovery mechanism. To build a flexible and energy‐efficient network structure, a new routing decision approach that uses a fuzzy‐based Dijkstra's algorithm is developed in the study. The proposed architecture can change the existing path during data transmission, which is the key property of our model and is achieved through the adoption of the SDN approach. All the components and algorithms of the proposed system are modeled and simulated using the Riverbed Modeler software for more realistic performance evaluation. The results indicate that the proposed SDN‐enabled structure with fuzzy‐based Dijkstra's algorithm outperforms the one using the regular Dijkstra's and the ZigBee‐based counterpart, in terms of the energy consumption ratio, and the proposed architecture can provide an effective cluster routing while prolonging the network lifetime. 相似文献
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大功率窄脉冲半导体激光器主要光电性能参数为:输出峰值光功率、阈值电流、正向电压、上升时间、峰值波长、光谱半宽、半强度角.根据激光制导系统对大功率窄脉冲激光器参数的特殊测试要求,研制一种大功率窄脉冲激光器测试平台,将小型化大功率激励器功放模块、大范围可调DC-DC模块、信号源板、激光器座、光学准直镜集成在一个平台上,与峰值功率计、光谱仪、CCD摄像机等仪器配合,可测出大功率窄脉冲激光器的峰值功率、峰值波长及波长随温度变化的漂移特性、发光芯均匀性等参数.介绍了大功率窄脉冲激光器测试台的特点,并对测试结果作了论述. 相似文献
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分析了夹心式压电换能器的阻抗特性,讨论了基于相位方式的现有跟踪方案的不足,提出了一种新的频率跟踪方案,介绍了实现该方案的电路系统。该方案的特点是:采用先扫频后跟踪的策略,解决了频率范围设定难的问题;增加解锁控制,使得系统在死锁或误跟踪时自动回到频率搜索状态;采用直接数字合成器(DDS)作为频率调整和信号产生的器件,实现了全数字系统,调整方便,精度高;采用复杂可编程逻辑器件(CPLD)做相位比较和DDS控制,使频率跟踪速度快,并且跟踪精度和速度均可控制。 相似文献
57.
The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress 下载免费PDF全文
Step-stress experiments are performed in this paper to investigate the degradation mechanism of an AlGaN/GaN high electron mobility transistor(HEMT).It is found that the stress current shows a recoverable decrease during each voltage step and there is a critical voltage beyond which the stress current starts to increase sharply in our experiments.We postulate that defects may be randomly induced within the AlGaN barrier by the high electric field during each voltage step.But once the critical voltage is reached,the trap concentration will increase sharply due to the inverse piezoelectric effect.A leakage path may be introduced by excessive defect,and this may result in the permanent degradation of the AlGaN/GaN HEMT. 相似文献
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