长脉冲激光沉积原位生成YBaCuO超导膜

用长脉冲激光(脉冲宽度150μs,波长1.06μm)辐照高温烧结的YBa_2Cu_3O_(7-x)靶,在6Pa的氧气压强下,巳在(100)YSZ单晶衬底上原位生成YBa_2Cu_(?)O_(7-x)超导膜。衬底置于750℃的加热器上,衬底与靶之间的距离5cm,用该法制得的薄膜光亮坚实,正常态呈金属性,零电阻温度为84.7K。用XRD和SEM对薄膜进行了分析研究。     

Biomagnetic measurements utilising a superparamagnetic marker: a feasibility study

Summary A preliminary study is here reported on a new potential marker for biomagnetic measurements. The marker consists of superparamagnetic polymer microspheres which were detected in the presence of external steady magnetic fields by means of an r.f.-SQUID magnetometer. The particles were prepared in samples differing in the concentration value and immersed in a homogeneous magnetic field of variable intensity. A simple model was taken into account for the distribution of the microspheres in the samples, so that the theoretical values were compared to the marker field values measured by the biomagnetic sensor. The overall sensitivity of the experimental apparatus and the minimum concentration value of the marker were then estimated.     

c轴定向氮化铝薄膜的制备

利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。     

Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.     

Current and shot noise in two capacitively coupled single electron transistors with an atomic sized spacer

The currents and their fluctuations in two capacitively coupled single electron transistors are determined in the limit of sequential tunnelling. Our considerations are restricted to the case when the islands (dots) of the transistors are atomic-sized, which means each of them has only one single electronic level available for the tunnelling processes. The Coulomb interactions of accumulated charges on the both single electron transistors lead to the effect of the negative differential resistance. An enhancement of the current shot-noise was also found. Spectral decomposition analysis indicated the two main contributions to the shot-noise: low- and high-frequency fluctuations. It was found that the low frequency fluctuations (polarization noise) are responsible for a strong enhancement of the current noise. Received 9 October 2001 / Received in final form 8 March 2002 Published online 9 July 2002     

On the Log-Laplace Equation for Nonlocal Operators Generating Sub-Markovian Semigroups

We consider the semilinear Cauchy problem for a class of pseudo-differential operators generating sub-Markovian semigroups. Solutions of such problems with negative definite nonlinearity play an important role in constructing branching measure-valued processes. We establish local existence and uniqueness of solutions in the context of the Dirichlet space associated to the problem. Comparison and global properties of solutions are also studied. Accepted 29 August 2001. Online publication 17 December 2001.     

反应离子镀光学薄膜的微观结构分析

用反应离子镀方法制备了ＴｉＯ２单层膜及ＴｉＯ２／ＳｉＯ２多层膜，用透射电子显微镜分别观察了由反应离子镀方法及传统蒸镀法二种不同工艺制得的ＴｉＯ２单层膜及ＴｉＯ２／ＳｉＯ２多层膜的断面结构，并对ＴｉＯ２单层膜进行了喇曼分析和卢瑟福背散射分析。     

Pulsed laser deposition of carbon films: Dependence of film properties on laser wavelength

We have grown thin carbon films by pulsed laser deposition and have investigated the extent to which the properties of such films, as well as the processes responsible for these properties, are laser wavelength dependent. Films were grown by ablating material from a graphite target onto room temperature Si(100) substrates with 1064 and 248 nm laser radiation. The films were analyzed byin situ electron energy loss spectroscopy and byex situ Raman spectroscopy. The results indicated that films grown with 1064 nm ablation were graphitic, while those grown with 248 nm radiation were diamond-like. We have also examined the mass and kinetic energy distributions of the particles ejected from graphite by the two laser wavelengths. The results indicated that irradiation of graphite with 1064 nm laser radiation results in the ejection of a series of carbon cluster ions C _n ⁺ (1 ≤ n ≤ 30) with mean kinetic energies less than 5 eV. Ablation of graphite with 248 nm radiation results in the ejection of primarily C ₂ ⁺ and C ₃ ⁺ with mean kinetic energies of 60 and 18 eV, respectively. These results suggest that large, low energy clusters produce graphitic films, while small, high energy clusters produce films of diamond-like carbon.     

Physical aging of a polyetherimide: Creep and DSC measurements

Creep and differential scanning calorimetry (DSC) measurements have been used to study the physical aging behavior of a polyetherimide. Isothermal aging temperatures ranged from 160°C to T_g with aging times ranging from 10 min to 8 days. The only measurable effect of physical aging on the short-time creep curves is a shift of the creep compliance to longer times. Andrade plots of the compliance versus the cube root of time are linear at short times with the slope β decreasing with increasing aging time to a constant value once equilibrium is reached. Log β³ is related directly to the degree to which the creep curves shift to longer times with physical aging, and is used in this work as a measure of physical aging. A reduced curve of log β³ versus log aging time is obtained for the aging temperatures investigated by appropriate vertical and horizontal shifts. The enthalpy change during aging increases linearly with the logarithm of the aging time, t_a, leveling off at equilibrium at values which increase with decreasing aging temperature. Hence, both nonequilibrium and equilibrium temperature shift factors can be calculated from the DSC data. Good agreement is observed between the equilibrium temperature shift factors obtained from the creep and DSC data. The temperature dependence of the nonequilibrium temperature shift factors is found to be an order of magnitude smaller than that of the equilibrium shift factors. The time scales to reach equilibrium for enthalpy and for mechanical measurements are found to be the same within experimental error. © 1995 John Wiley & Sons, Inc.     

npn AlGaN/GaN HBT模型与特性分析

基于实验数据对GaN材料的少子寿命和碰撞电离率进行了建模,应用漂移-扩散传输模型开展了npnAlGaN/GaN异质结双极晶体管的特性研究,给出了器件导通电压、偏移电压和饱和电压的解析式.结果表明:实际器件导通电压、偏移电压及饱和电压较大的原因主要是高基区电阻和基区接触的非欧姆特性,为器件的工艺制造提供了理论指导.