Enhanced deep-red emission in donor-acceptor molecular architecture: The role of ancillary acceptor of cyanophenyl

Cyanophenyl as ancillary acceptor to modify donor-acceptor compound,plays an effective role in shifting the emission color to deep red and maintaining the luminescent efficiency.     

New polythiophenes bearing electron-acceptor phthalocyanine chromophores

Two new donor-acceptor copolymers comprising a polythiophene backbone, and bearing phthalocyanine chromophores on the side chains have been prepared. Preliminary photophysical characterization of these materials by FTIR photoinduced absorption indicates that electron transfer from the polythiophene to the phthalocyanine units takes place.     

Organophosphorus π-conjugated materials: the rise of a new field

The synthesis and electronic properties of new linear organic π-conjugated systems incorporating phosphole rings are described. Well defined α,α′-(phosphole-thiophene) oligomers possess low HOMO-LUMO gaps and their optical and electrochemical properties can be tuned via chemical modifications of the P-atoms. The physical properties of these compounds make them valuable materials for OLED’s. The coordination ability of phosphole-based dipoles has been exploited for the synthesis of efficient multipolar NLO-phores. Lastly, phospholes have been used for the synthesis of assemblies exhibiting through-bond interaction between two π-systems via P-P σ-skeletons.     

Photovoltaic Characteristics of a Naphthylamine Derivative

Organic photovoltaic （OPV） cells were fabricated via vacuum vapor deposition with {4-[2-（3-di-cyanomethylidene-5,5-dimethylcyclohexenyl）vinyl]phenyl}di（1-naphthyl）amine （DNP-2CN） as the electron donor, and fullerene （C60） as the electron acceptor. A thin film （10 nm） of tris（8-quinolinolato）aluminum （Alq3） was adopted as the buffer layer. A device based on this DNP-2CN exhibited an open circuit voltage （Voc） of 370 mV, a short-circuit current density （Jsc） of 0.61 mAocm 2, and a white-light power conversion efficiency （ η） of 0.09% （AM1.5, 75 mW.cm^- 2）.     

Some observations from interrupted lifetest of GaInAsP/InP inverted-rib laser diodes

Conventionally, lifetests of semiconductor laser diodes usually involved operating the devices continuously at either constant power output or drive current, with periodic recording of their characteristics. In this paper, some effects arising from interrupted lifetest of 1.3 m GaInAsP-InP inverted-rib laser diodes are reported. This unconventional lifetest method involves constant power biasing at 4 mW/facet and 8 mW/facet respectively at 50°C, followed by a period during which the lifetest is interrupted and the devices left unbiased at room temperature. Subsequently, the devices were put back on constant power biasing at 50°C. Among a number of parameters, pronounced reduction in the threshold current, current for 4 mW/facet and 8 mW/facet were observed, indicating strong recovery effects commencing from the time when the life-test was interrupted. Redistribution of mobile defects in the cladding layer is postulated to be the cause of the degradation recovery, and the data supports the occurrence of an aging-current dependent defect annihilation mechanism. Such recovery effects have so far been observed to occur only in the GaInAsP-InP inverted-rib devices.     

Ultraefficient Non-Doped Deep Blue Fluorescent OLED: Achieving a High EQE of 10.17% at 1000 cd m−2 with CIEy<0.08

The pursuit for efficient deep blue material is an ever-increasing issue in organic optoelectronics field. It is a long-standing challenge to achieve high external quantum efficiency (EQE) exceed 10% at brightness of 1000 cd m⁻² with a Commission International de L'Eclairage (CIE_y) <0.08 in non-doped organic light-emitting diodes (OLEDs). Herein, this study reports a deep blue luminogen, PPITPh, by bonding phenanthro[9,10-d]imidazole moiety with m-terphenyl group via benzene bridge. The non-doped OLED based on PPITPh exhibits an exceptionally high EQE of 11.83% with a CIE coordinate of (0.15, 0.07). The EQE still maintains 10.17% at the brightness of 1000 cd m⁻², and even at a brightness as high as 10000 cd m⁻², an EQE of 7.5% is still remained, representing the record-high result among non-doped deep-blue OLEDs at 1000 cd m⁻². The unprecedented device performance is attributed to the reversed intersystem crossing process through hot exciton mechanism. Besides, the maximum EQE of orange phosphorescent OLED with PPITPh as host is 32.02%, and remains 31.17% at the brightness of 1000 cd m⁻². Such minimal efficiency roll-off demonstrates that PPITPh is also an excellent phosphorescent host material. The result offers a new design strategy for the enrichment of high-efficiency deep blue luminogen.     

Paving the Way for High-Performance UVB-LEDs Through Substrate-Dominated Strain-Modulation

AlGaN-based ultraviolet-B light-emitting diodes (UVB-LEDs) exhibit great potential in phototherapy, vitamin D3 synthesis promotion, plant growth regulation, and so on. However, subjected to the excess compressive strain induced by the large lattice mismatch between multiple quantum wells (MQWs) and AlN, UVB-LEDs that simultaneously satisfy the requirements of high light output power (LOP), low working voltage, and excellent stability are rarely reported. Here, a substrate-dominated strain-modulation strategy is proposed. By precisely manipulating the strain in AlN grown on nano-patterned sapphire substrate (NPSS) to a slightly tensile one, the compressive strain in the following Al_0.55Ga_0.45N underlayer and Al_0.28Ga_0.72N/Al_0.45Ga_0.55N MQWs is successfully suppressed. As a result, an outstanding UVB-LED with a peak wavelength at 303.6 nm is achieved. The 20 × 20 mil² UVB-LED chip shows a wall-plug efficiency (WPE) of 3.27% under a forward current of 20 mA and a high LOP of 57.2 mW with an extremely low voltage of 5.87 V under a forward current of 800 mA. It is more exciting that the LOP degradation is as low as 17% after 1000 h operation under a forward current density of 75 A cm⁻², showing excellent stability. The here-developed UVB-LED, with a high LOP and excellent reliability, will definitely promote the applications of AlGaN-based UVB-LEDs.     

Highly Efficient Quasi 2D Blue Perovskite Electroluminescence Leveraging a Dual Ligand Composition

Perovskite light-emitting diodes (PeLEDs) are advancing because of their superior external quantum efficiencies (EQEs) and color purity. Still, additional work is needed for blue PeLEDs to achieve the same benchmarks as the other visible colors. This study demonstrates an extremely efficient blue PeLED with a 488 nm peak emission, a maximum luminance of 8600 cd m⁻², and a maximum EQE of 12.2% by incorporating the double-sided ethane-1,2-diammonium bromide (EDBr₂) ligand salt along with the long-chain ligand methylphenylammonium chloride (MeCl). The EDBr₂ successfully improves the interaction between 2D perovskite layers by reducing the weak van der Waals interaction and creating a Dion–Jacobson (DJ) structure. Whereas the pristine sample (without EDBr₂) is inhibited by small stacking number (n) 2D phases with nonradiative recombination regions that diminish the PeLED performance, adding EDBr₂ successfully enables better energy transfer from small n phases to larger n phases. As evidenced by photoluminescence (PL), scanning electron microscopy (SEM), and atomic force microscopy (AFM) characterization, EDBr₂ improves the morphology by reduction of pinholes and passivation of defects, subsequently improving the efficiencies and operational lifetimes of quasi-2D blue PeLEDs.     

Lateral WSe2 Homojunction through Metal Contact Doping: Excellent Self-powered Photovoltaic Photodetector

Here an IR-heating chemical vapor deposition (CVD) approach enabling fast 2D-growth of WSe₂ thin films is reported, and the great potential of metal contact doping in building CVD-grown WSe₂-based lateral homojunction is demonstrated by contacting with TiN/Ni metals in favor of holes/electrons injection. Shortening nanosheet channel to ≈2 µm leads to pronounced enhancement in the performance of diode. The fabricated WSe₂-based diode exhibits high rectification ratios without the need of gate modulation and can work efficiently as photovoltaic cell, with maximum open circuit voltage reaching up to 620 mV and a high power conversion efficiency over 15%, empowering it as superb self-powered photodetector for visible to near-infrared lights, with photoresponsivity over 0.5 A W⁻¹ and a fast photoresponse speed of 10 µs under 520 nm illumination. It is of practical significance to achieve well-performed photovoltaic devices with CVD-grown WSe₂ using fab-friendly metals and simple processing, which will help pave the way toward future mass production of optoelectronic chips.     

Modulating Backbone Conjugation of Polymeric Thermally Activated Delayed Fluorescence Emitters for High-Efficiency Blue OLEDs

Blue conjugated polymers-based OLEDs with both high efficiency and low efficiency roll-off are under big challenge. Herein, a strategy of local conjugation is proposed to construct high-efficiency blue-emitting conjugated polymers, in which the conjugation degree of polymeric backbones is adjusted by inserting different spacers. In this way, the energy level of triplet state and the energy transfer direction of the polymeric main-chains can be effectively regulated. Benefiting from such fine regulation, the prepared alternative copolymers Alt-PB36 with local conjugated main-chains can better suppress the accumulation of long-lived triplet excitons comparing with the complete conjugated polymers. The higher PLQY of Alt-PB36 also verifies the effective energy transfer from the polymeric main-chains to the TADF units. Accordingly, Alt-PB36 based solution-processed OLEDs achieve an EQE_max of 11.6% and a very low efficiency roll-off of 2.8% at 100 cd m⁻² and 15.2% at 500 cd m⁻². This result represents the best efficiency among blue light-emitting conjugated polymer-based OLEDs so far under high luminance.