一种12位80 MS/s CMOS流水线ADC设计

介绍了一种12 bit 80 MS/s流水线ADC的设计,用于基带信号处理,其中第一级采用了2.5 bit级电路,采样保持级采用了自举开关提高线性,后级电路采用了缩减技术,节省了芯片面积.采用了折叠增益自举运放,优化了运放的建立速度,节省了功耗.芯片采用HJTC0.18μm标准CMOS工艺,1.8 V电压供电,版图面积2.3 mm × 1.4 mm.版图后仿真表明,ADC在8 MHz正弦信号1 V峰值输入下,可以达到11.10 bit有效精度,SFDR达到80.16 dB,整个芯片的功耗为155 mW.     

一个切换混沌系统的分析与电路实现

采用改变系统乘积项的方法,在已提出的混沌系统的基础上,构建了一个切换混沌系统。分析了平衡点的性质,混沌吸引子相图和Lyapunov指数等特性,设计了可实现切换混沌系统的电路并进行了电路实验,实现结果与仿真结果一致：     

Optimization of component reliability in the design phase of capital goods

We introduce a quantitative model to support the decision on the reliability level of a critical component during its design. We consider an OEM who is responsible for the availability of its systems in the field through service contracts. Upon a failure of a critical part in a system during the exploitation phase, the failed part is replaced by a ready-for-use part from a spare parts inventory. In an out-of-stock situation, a costly emergency procedure is applied. The reliability levels and spare parts inventory levels of the critical components are the two main factors that determine the downtime and corresponding costs of the systems. These two levels are decision variables in our model. We formulate the portions of Life Cycle Costs (LCC) which are affected by a component’s reliability and its spare parts inventory level. These costs consist of design costs, production costs, and maintenance and downtime costs in the exploitation phase. We conduct exact analysis and provide an efficient optimization algorithm. We provide managerial insights through a numerical experiment which is based on real-life data.     

薄膜开关面板丝网印刷要注意的问题

薄膜开关具有体积小、重量轻、密封性好、防灰性和耐水性好,外观新颖、安全可靠、使用寿命长等诸多特点,在电子产品中的应用非常广泛。文章介绍薄膜开关面板丝网印刷的工艺技术及常见故障的解决方法。     

IGBT在雷达发射机中的应用

IGBT是一种综合性能十分优越的大功率开关管,广泛应用于大功率电子电路中,具有功率大、电压高、电流大、开关时间快等优点。本文介绍固态开关管IGBT在发射机几种典型类型的调制器电路中的应用方法和注意事项。     

智能高频开关电源在变电站直流系统改造中应用

分析了建站较早的变电站直流系统改造的必要性和改造后所取得的效果,介绍了智能高频开关电源系统的性能、特点及其各部分的作用和在改造过程中的改进情况。     

一种新型无源MEMS万向碰撞开关

采用MEMS体Si加工工艺和圆片级封装技术,开发了一种基于特种运输中的新型无源MEMS万向碰撞开关。开关选用弹簧-质量-阻尼的典型碰撞结构,对惯性加速度计敏感,以碰撞接触的形式提供导通电阻信号,并拥有500g径向360°和1000g纵向碰撞触发,单个器件可以实现多个器件的功能。经过仿真设计和工艺研究,最终完成了开关的制作,封装后体积后为6.6mm×5mm×2.4mm。经测试表明开关实现了初始的设计阈值,导通电阻约10Ω,导通时间约10μs,验证了抗5000g冲击能力,它具有体积小、重量轻、高可靠、低成本,可反复使用等特点,在可靠性跌落试验、汽车安全碰撞试验和飞行器上具有广泛的应用前景。     

一种新型RF MEMS 单刀双掷开关的设计与仿真

本文介绍了一种利用单驱动电压控制通路选择的新型RF MEMS单刀双掷开关,利用三维仿真软件Ansoft HFSS和ANSYS进行仿真和优化设计该开关的性能。仿真结果表明：驱动电压为22V,开关时间为22μs,在中心频率30GHz处,开关处于down状态下的插入损耗为0.42dB,回波损耗为43dB,隔离度为29dB;而当开关处于up状态的插入损耗为0.53dB,回波损耗为19dB,隔离度为28dB,该开关的性能仿真和优化设计达到理想情况。     

500kV 串补站隔离开关操作的电磁骚扰测量与分析

：对500kV 串补站隔离开关操作在二次回路产生电磁骚扰的测量方法和结果进行了论述,通过对骚扰信号时域和频域的分析处理,给出了骚扰的波形特征。     

A novel CMOS charge-pump circuit with current mode control 110 mA at 2.7 V for telecommunication systems

This paper presents a novel organization of switch capacitor charge pump circuits based on voltage doubler structures. Each voltage doubler takes a dc input and outputs a doubled dc voltage. By cascading voltage doublers the output voltage increases up to 2 times. A two-phase voltage doubler and a multiphase voltage doubler structures are discussed and design considerations are presented. A simulator working in the Q-V realm was used for simplified circuit level simulation. In order to evaluate the power delivered by a charge pump, a resistive load is attached to the output of the charge pump and an equivalent capacitance is evaluated. To avoid the short circuit during switching, a clock pairs generator is used to achieve multi-phase non-overlapping clock pairs. This paper also identifies optimum loading conditions for different configurations of the charge pumps. The proposed charge-pump circuit is designed and simulated by spice with TSMC 0.35-μm CMOS technology and operates with a 2.7 V to 3.6 V supply voltage. It has an area of 0.4 mm2; it was designed with a frequency regulation of 1 MHz and internal current mode to reduce power consumption.