假火花开关初始放电过程的理论计算

假火花开关具有耐压高、放电电流大及电流上升速率快的优点。本文利用流体模型及当地场近似，对其放电过程进行了理论计算。结果表明，在放电初始阶段，空心阴极效应起关键作用。同时，对不同初始条件（初始电子、离子密度不同）及不同边界条件（开关结构尺寸不同）的放电过程进行了计算。给出了放电时间、放电电流、最佳阴阳极距离和阴极孔尺寸大小。     

Ge_xSi_（1－x）／Si异质结无间距定向耦合光开关模型分析

提出一种简便可行的ＧｅｘＳｉ１－ｘ异质结无间距定向耦合光开关（ＢＯＡ型－ＢｉｆｕｒｃａｔｉｏｎＯｐｔｉｃａｌＡｃｔｉｖｅ）模型分析方法。该方法采用等离子体包散效应分析了这种光开关的电学调制机理；采用异质结超注原理分析了开关的电学性质；并根据典单模脊形波导理论和上述分析，设计了利用双模干涉机制工作的Ｇｅ０．０５ＳＩ０．９５／Ｓｉ异质结ＢＯＡ型光开关的结构参数和电学参数。     

GW──I磁传感器实验仪研制

本文介绍了自制磁传感器实验仪的原理。     

基于Fabry-Perot结构的可调波长选择光开关

本文提出波长选择光开关的概念,首次研制出一个基于Fabry-Perot结构的可调波长选择光开关,该开关为2×2光纤端口,每个端口携带N个波长,工作时可以选1个或多个波长,插入损耗小于3dB,波长调谐范围10nm,调谐机构为一对多层三明治结构的压电陶瓷,具有驱动电压低,小于5V的驱动电压可以达到3.3nm的调谐,最大开关时间为1毫秒,开关比优于30dB.最后还分析了其基本透射与反射光谱性能,并讨论其对光通信、光交换网络产生的重要应用价值.     

0.35 μm CMOS T/R Switch for 2.4 GHz Short Range Wireless Applications

This paper describes the design and implementation of a transmit/receive switch for 2.4 GHz ISM band applications. The T/R switch is implemented in a 0.35 m bulk CMOS process and it occupies 150 m · 170 m of die area. A parasitic MOSFET model including bulk resistance is used to optimize the physical dimensions of the transistors with regard to insertion loss and isolation. The measured insertion loss is 1.3 dB without port matching. Simulations using measured s-parameters indicate that an insertion loss of 0.8 dB can be obtained with a conjugate match. The measured isolation is 42 dB and the maximum transmit power is 16 dBm.     

Spectral anomalies and spectral switches of partially coherent and polychromatic light diffracted at an aperture

Inrecentyearsanewbranchofmodernphysicalopticscalledsingularoptics[1]hasbeendeveloped.In2002theworkinsingularopticswasextendedfrommonochromaticlighttospatiallyfullycoherentandpolychromaticlightbyGburetal.[2—4].Itwasfoundthat,whenaconverging,spatiallyfullycoherentandpolychromaticsphericalwaveisdiffractedatanaperture,anomalousspectralchangestakeplaceclosetozerosoftheintensityinthefarfield;i.e.thespectrumisredshiftedatsomepoints,blueshiftedatothers,andsplitintotwolineselsewhere.Thepredictionsofsp…     

Delayed breakdown diode and its optimal design for solid state picosecond closing switch

We study a Si-based diode with a p⁺nn⁺ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode (DBD). From the results of numerical simulations and theoretical analysis, single device has demonstrated reliable operation at 2.3 kV, 89 ps risetime, and high output dV/dt(30 kV/ns). As a contribution to the optimal design, some conclusions about trade-off are drawn by changing structure parameters and physical parameters.     

Asymptotic Behavior of the Density in a Parabolic SPDE

Consider the density of the solution X(t, x) of a stochastic heat equation with small noise at a fixed t[0, T], x[0, 1]. In this paper we study the asymptotics of this density as the noise vanishes. A kind of Taylor expansion in powers of the noise parameter is obtained. The coefficients and the residue of the expansion are explicitly calculated. In order to obtain this result some type of exponential estimates of tail probabilities of the difference between the approximating process and the limit one is proved. Also a suitable iterative local integration by parts formula is developed.     

电流控阈技术及三值电流型 CMOS施密特电路

本文以开关信号理论为指导 ,对电流型 CM OS电路中如何实现阈值控制进行研究. 建立实现阈 值控制电路的电流传输开关运算 ,并用于指导电流型 CMOS施密特电路的开关级设计 .用 PSPICE程序 模拟证明了所设计的电路具有理想的施密特电路特性.     

A GaAs–InGaAs optoelectronic switch with multiple operation states

An optoelectronic switch with both n- and p-type delta-doped (-doped) quantum wells was investigated. The -doped structures formed potential wells for the carrier accumulation and potential barriers for the carrier injection. Being possessed of -doped sheets with different doping levels, the potential barriers were sequentially collapsed to produce a double negative-differential-resistance (NDR) phenomenon in the current–voltage (I–V) characteristics of the device, due to the carrier accumulation in the potential wells. The device also showed an optical function related to the barrier heights controllable by incident light.