Power dissipation characteristics of great power and super high speed semiconductor switch

The power dissipation characteristics of pulsed power switch reversely switched dynistors （RSDs） are investigated in this paper. According to the expressions of voltage on RSD, derived from the plasma bipolar drift model and the RLC circuit equations of RSD main loop, the simulation waveforms of current and voltage on RSD are acquired through iterative calculation by using the fourth order Runge-Kutta method, then the curve of transient power on RSD versus time is obtained. The result shows that the total dissipation on RSD is trivial compared with the pulse discharge energy and the commutation dissipation can be nearly ignored compared with the quasi-static dissipation. These characteristics can make the repetitive frequency of RSD increase largely. The experimental results prove the validity of simulation calculations. The influence factors on power dissipation are discussed. The power dissipation increases with the increase of the peak current and the n-base width and with the decrease of n-base doping concentration. In order to keep a low power dissipation, it is suggested that the n-base width should be smaller than 320μm when doping concentration is 1.0×10^14cm^-3 while the doping concentration should be higher than 5.8×10^13cm^-3 when n-base width is 270μm.     

基于SOS的脉冲功率源技术新进展

 研制了基于SOS的胡杨200和胡杨700脉冲功率源。给出了胡杨200和胡杨700的电路原理、组成结构和实验波形。介绍了在SOS脉冲功率源上开展的高重复频率强流电子束产生、长寿命阴极实验、绝缘介质的高重复频率击穿实验和低引导磁场无箔二极管等实验研究进展。经测试，胡杨200在2 kHz重复频率、负载阻抗200 Ω下，输出电压200 kV，脉冲宽度约35 ns，平均输出功率大于10 kW；在300 Hz条件下可连续运行。胡杨700同样为全固态脉冲功率源，其设计指标:输出电压700 kV，电流5 kA，脉冲宽度约40 ns；经初步调试在150 Ω电阻负载上单脉冲输出指标达到660 kV，4.4 kA，脉宽约70 ns。     

Piezoelectric actuated multiple channels optical switch

In this article, a novel multi-channel optical switch that is composed of a Y-shaped micromirror with two symmetrically reflective surfaces, a fixed pivot for mounting the micromirror, and a piezoelectric actuator to actuate the micromirror, is proposed. Working principle of this novel device is that the switching displacement of the reflective beam of light can be linearly controlled by the displacement of the piezoelectric actuator. Accordingly, the 1×N switching task can be easily achieved. To realize the proposed concept, UV-LIGA technique was implemented to fabricate the components. Multiple-switching concept was demonstrated through experiments. Efficiency of the proposed optical switch was investigated by computer simulations. Optical efficiency of the proposed device can be optimized if its dimensions are adequately designed. Gou-Jen Wang received the B.S. degree on 1981 from National Taiwan University and the M.S. and Ph.D. degrees on 1986 and 1991 from the University of California, Los Angeles, all in Mechanical Engineering. Following graduation, he joined the Dowty Aerospace Los Angeles as a system engineer from 1991 to 1992. Dr. Wang joined the Mechanical Engineering Department at the National Chung-Hsing University, Taiwan on 1992 as an Associate Professor and has become a Professor on 1999. Since 2003, he has been the Division Director of Curriculum of the Center of Nanoscience and Nanotechnology. His research interests are MEMS, Biomedical Micro/Nano devices, Nano fabrication. Hong-Ru Liu received the B.S. and M.S. degrees on 2002 and 2004 from the National Chung-Hsing University, both in Mechanical Engineering.     

一种串联蓄电池组电压巡检仪的设计

在线监测是目前工业中常见的监测方式,工业级应急电源的蓄电池便是需要监测的对象。用一种以单片机技术为核心,利用V/F转换的方法对单体蓄电池电压进行实时监测,采用光电隔离与变压器隔离的方法解决采集电路和单片机处理电路电气隔离的问题。给出巡检仪硬件结构框架,通过3种通信方式实现数据通信,并给出采集电路的供电方法。     

MEMS开关封装结构热形变对芯片性能的影响

模拟了处在一定功率密度或不同温度下封装结构贴片的形变引起的X波段MEMS开关芯片的形变,从而导致的开关芯片性能的变化。用Coventor软件模拟出在开关衬底为200μm,贴片处功率密度为300pW/μm2时,开关芯片的形变量为0.142μm;开关衬底为300μm,温度为373K时,开关芯片的形变量为0.791μm。进一步用HFSS模拟出开关的插入损耗在中心频率10GHz处由封装前的0.042dB和0.022dB变化为封装后的0.078dB和0.024dB。     

残留农药残留量速测仪光电系统的实验研究

介绍了“残留农药速测仪”光电系统的设计依据。重点介绍单色光发生器的光学部件、光路系统和棱镜分光;另外介绍了光电转换器件的选择方法;最后用实验验证了对仪器的稳定性和重现性的影响。     

A Novel Sampling Switch Suitable for Low-Voltage Analog-to-Digital Converters

提出了一种适用于低电源电压的新型高线性度采样开关.与传统低电压采样开关相比,这种新型采样开关不仅消除了MOS开关由于栅源电压随输入信号变化所引入的非线性,而且进一步消除了MOS开关由于阈值电压随输入信号变化引入的非线性.这是通过采用一个与采样MOS开关具有相同阈值电压的"复制"开关得以实现的.基于Chartered 0.35μm标准CMOS工艺,文中设计了一个此类新型MOS采样开关,在输入信号为0.2MHz正弦波,峰峰值为1.2V,采样时钟频率为2MHz时,无杂散动态范围达到111dB,比栅压自举开关提高了18dB;同时导通电阻的变化减小了90%.这种新型采样开关特别适用于低电压,高精度模数转换器.     

半行波半导体激光放大器超短光脉冲响应及开关特性的实验研究

本文对半行波半导体激光放大器的脉冲响应及开关特性进行了实验研究。脉宽为27ps,重复频率为1GHz的超短光脉冲串通过放大器后脉冲无展宽。当对放大器的注入电流进行调制时,放大器可起到高速光开关的作用。     

假火花开关初始放电过程的理论计算

假火花开关具有耐压高、放电电流大及电流上升速率快的优点。本文利用流体模型及当地场近似，对其放电过程进行了理论计算。结果表明，在放电初始阶段，空心阴极效应起关键作用。同时，对不同初始条件（初始电子、离子密度不同）及不同边界条件（开关结构尺寸不同）的放电过程进行了计算。给出了放电时间、放电电流、最佳阴阳极距离和阴极孔尺寸大小。     

Ge_xSi_（1－x）／Si异质结无间距定向耦合光开关模型分析

提出一种简便可行的ＧｅｘＳｉ１－ｘ异质结无间距定向耦合光开关（ＢＯＡ型－ＢｉｆｕｒｃａｔｉｏｎＯｐｔｉｃａｌＡｃｔｉｖｅ）模型分析方法。该方法采用等离子体包散效应分析了这种光开关的电学调制机理；采用异质结超注原理分析了开关的电学性质；并根据典单模脊形波导理论和上述分析，设计了利用双模干涉机制工作的Ｇｅ０．０５ＳＩ０．９５／Ｓｉ异质结ＢＯＡ型光开关的结构参数和电学参数。