背入射Al_(0.42)Ga_(0.58)N/Al_(0.40)Ga_(0.60)N异质结p-i-n太阳光盲紫外探测器

在蓝宝石上用MOCVD生长的材料制备了背入射Al0.42Ga0.58N/Al0.40Ga0.60N异质结p-I-n太阳光盲紫外探测器.从器件的正向Ⅰ-Ⅴ特性曲线计算了理想因子n与串联电阻Rs分别为3和93?器件在零偏压下275nm峰值波长处的外量子效率与探测率分别为9%和4.98×1011cm·Hz1/2/W,分析表明Al0.42Ga0.58N窗口层在275nm波长处的透过率仅为15.7%,是器件外量子效率和探测率偏低的原因之一.     

高温AlN为模板的AlGaN基p-i-n背照式日光盲探测器

第一次报道了以高温AlN为模板层的AlGaN基p-i-n背照式日光盲探测器的制作和器件特性.利用MOCVD方法在(0001)面的蓝宝石衬底上生长了探测器的AlxGa1-xN多层外延材料.在无需核化层的高温AlN模板上生长了p-i-n背照式日光盲探测器的无裂纹高Al组分(0.7)AlGaN多层外延结构.利用在线反射监测仪、三轴X射线衍射及原子力显微镜表征了外延材料的晶体质量.在1.8V的反向偏压下,制作的探测器表现出了日光盲响应特性,在270nm处最大响应度为0.0864A/W.具有约3.5V的正向开启电压,大于20V的反向击穿电压,在2V的反向偏压下暗电流小于20pA.     

InGaAs/GaAs量子点红外探测器

与量子阱红外探测器相比,量子点红外探测器具有不制作表面光栅就能在垂直入射红外光照射下工作以及工作温度更高等优势。然而,目前阻碍量子点红外探测器性能提高的技术瓶颈主要来自组装量子点较差的大小均匀性、较低的量子点密度以及垂直入射下子带跃迁吸收效率低等原因。利用分子束外延技术研究了如何从量子点材料生长和器件设计两方面来克服这些困难,并且制作了几种不同结构的InGaAs/GaAs量子点红外探测器。 在77 K时,这些器件在垂直入射条件下观察到了很强的光电流信号。     

p-GaN层厚度对GaN基p-i-n结构紫外探测器性能的影响

研究了p-GaN层厚度对GaN基pin结构紫外探测器性能的影响.模拟计算表明：较厚的p-GaN层会减小器件的量子效率,然而同时也会减小器件的暗电流,较薄的p-GaN层会增加器件的量子效率,但是同时也增加了器件的暗电流.进一步的分析表明,金属和p-GaN之间的结电场是出现这种现象的根本原因.在实际的器件设计中,应该根据实际需要选择p型层的厚度. 关键词： GaN 紫外探测器 量子效率 暗电流     

Photomemory and Pulse Monitoring Featured Solution-Processed Near-Infrared Graphene/Organic Phototransistor with Detectivity of 2.4 × 1013 Jones

Emerging graphene/organic phototransistors are eye-catching technologies owing to their unique merits including easy/low-cost fabrication, temperature independent, and achieving various functions. However, their development in the near-infrared (NIR) region is experiencing a bottleneck of inferior sensitivity due to low exciton dissociation efficiency and inefficient charge extraction rate. Here, a novel-design solution-processed graphene/organic NIR phototransistor is reported, that is, creatively introducing electron extraction layer of ZnO on graphene channel and employing organic ternary bulk heterojunction as photosensitive layer, successfully breaking that bottleneck. The phototransistor exhibits a high responsivity of 6.1 × 10⁶ A W⁻¹, a superior detectivity of 2.4 × 10¹³ Jones, and a remarkable minimum detection power of 1.75 nW cm⁻² under 850 nm radiation. Considering its excellent NIR detection performance, a noncontact transmission-type pulse monitoring is carried out with no external circuit support, from which human pulse signal and heart rate can be displayed in real time. The phototransistor, interestingly, can be switched into a photomemory function with a retention time of 1000 s in the atmosphere through a gate voltage of −20 V. The design takes the characteristics of graphene/organic phototransistors to a higher level, beyond the limit of sensitivity, and opens up a novel approach for developing multifunction devices.     

A self-powered and sensitive terahertz photodetection based on PdSe2

With the rapid development of terahertz technology, terahertz detectors are expected to play a key role in diverse areas such as homeland security and imaging, materials diagnostics, biology, medical sciences, and communication. Whereas self-powered, rapid response, and room temperature terahertz photodetectors are confronted with huge challenges. Here, we report a novel rapid response and self-powered terahertz photothermoelectronic (PTE) photodetector based on a low-dimensional material: palladium selenide (PdSe₂). An order of magnitude performance enhancement was observed in photodetection based on PdSe₂/graphene heterojunction that resulted from the integration of graphene and enhanced the Seebeck effect. Under 0.1-THz and 0.3-THz irradiations, the device displays a stable and repeatable photoresponse at room temperature without bias. Furthermore, rapid rise (5.0 μs) and decay (5.4 μs) times are recorded under 0.1-THz irradiation. Our results demonstrate the promising prospect of the detector based on PdSe₂ in terms of air-stable, suitable sensitivity and speed, which may have great application in terahertz detection.     

Black phosphorus junctions and their electrical and optoelectronic applications

Black phosphorus(BP),an emerging two-dimensional material,is considered a promising candidate for next-genera-tion electronic and optoelectronic devices due to in-plane anisotropy,high mobility,and direct bandgap.However,BP devices face challenges due to their limited stability,photo-response speed,and detection range.To enhance BP with powerful electric-al and optical performance,the BP heterostructures can be created.In this review,the state-of-the-art heterostructures and their electrical and optoelectronic applications based on black phosphorus are discussed.Five parts introduce the perform-ance of BP-based devices,including black phosphorus sandwich structure by hBN with better stability and higher mobility,black phosphorus homojunction by dual-gate structure for optical applications,black phosphorus heterojunction with other 2D materials for faster photo-detection,black phosphorus heterojunction integration with 3D bulk material,and BP via As-doping tunable bandgap enabling photo-detection up to 8.2 μm.Finally,we discuss the challenges and prospects for BP electric-al and optical devices and applications.     

Near-Infrared Light Triggered Self-Powered Mechano-Optical Communication System using Wearable Photodetector Textile

The merging of humans and machines depends on the contact sensor medium used. However, this contact interaction inevitably leads to mechanical loss. Photodetectors are cutting-edge tools in optical communication that use controlled lighting to achieve efficient signal conversion to drive mechano–optical communication systems and provide an innovative interface for the Internet of Things services. Here, a self-powered, non-contact mechano–optical communication system based on a wearable Te@TeSe photodetector textile is presented, which encodes near-infrared light to modulate robotic manipulator actions. The wearable Te@TeSe photodetector textile enhanced the photocurrent and responsivity by 400 times compared to a pristine Te nanowire (NW) array. The type II heterojunction of Te@TeSe NWs is proved by first-principles calculations and simulated, providing insights on photogenic carrier transmission in Te@TeSe NWs. This system shows the possibility of duplicate real-time execution of mechanical gestures in virtual environments and paves the way for advanced optical devices applied to information transmission and mechano–optical communication.     

一种感光栅GaN基高电子迁移率晶体管紫外探测器

利用GaN基高电子迁移率晶体管(HEMT)的栅控特性和铁电体的光伏效应机制,制备了一种新型(光敏感层/HEMT)光探测器件。主要研究了复合薄膜和溅射气氛对光敏感薄膜的光伏性能以及对新型感光栅极探测器的光探测能力的影响。结果表明,PZT/ZnO复合薄膜的量子效率峰值达到14.55%;有氧氛围下制备的PZT薄膜剩余极化强度达到52.31μC/cm²;沉积PZT/ZnO复合薄膜的探测器在紫外光照下相比于暗场下的源漏饱和电流最多增加12.64mA。可见,所制备的新型探测器对紫外光具有优良的探测能力,为光探测的研究提供了新的方向。     

宽谱光源平均波长测试系统光路设计仿真

利用像元分辨率公式和高斯光束传输理论,设计了一种基于线阵InGaAs光电探测器的宽谱光源平均波长测试系统光路结构。在Zemax光学软件中建立了宽谱光源平均波长测试系统的光路模型,并优化了该测试系统的光路结构参数。根据软件仿真建立的光路模型,分析了位置偏差对准直光束平行度及系统光能利用率的影响,得到了相应的变化曲线,为宽谱光源平均波长测试系统的结构设计和装配提供了指导。