量子阱共振腔增强型光电探测器的高功率特性

通过测量1．55Mm量子阱共振腔增强型光电探测器的光电流随反向电压和光功率的变化关系,以及模拟能带结构、电场分布等特性,研究了量子阱共振腔增强型光电探测器的高功率特性．分析了光电流的产生机制,测量了1．064μm量子阱共振腔增强型光电探测器的光电响应,模拟了具有不同势垒高度的量子阱共振腔增强型光电探测器的光电响应．从实验和模拟两方面证明了量子阱的势垒高度是影响量子阱共振腔增强型光电探测器高功率特性的最主要因素．     

新型PTCDA/p-Si光电探测器

研制成功的PTCDA／p—Si新型光电探测器与型号为PHD714的PIN光电二极管的电参数进行了测试对比。结果表明,两者的光谱响应范围均为450～1100nm,峰值波长为930nm,对光的响应速度均小于10^-9s;在1000Lx及1．5V电压作用下,前者的光电流普遍大于100μA,后者光电流小于100μA,前者经高温（120℃）48h及低温（-80℃）12h 2次循环实验后测得其电参数稳定。表明,这种新型有机／无机光电探测器具有更优良的光敏性及可靠性。     

1064nm RCE探测器光电响应特性分析

对1064nm谐振腔增强型（RCE）光电探测器(PD)的光电响应特性进行了分析研究．利用MBE生长技术得到有源区分别为量子阱和量子点的1064nm RCE探测器的外延片,并对制作的探测器进行了各种光电特性测试．结果表明量子阱结构的RCE探测器量子效率峰值达到57%,谱线半宽6～7nm,峰值波长1059nm;而量子点结构的RCE探测器量子效率峰值达到30%,谱线半宽5nm,峰值波长1056nm．通过分析量子效率和吸收系数之间的关系,对两种结构器件的吸收进行了比较,发现虽然量子点探测器的吸收小,但通过合理设计共振腔等方法也可以达到较高的量子效率．两种结构的器件都有很好的Ｉ-Ｖ特性．     

Highly Efficient Organic Ultraviolet Photodetectors Based on Re(I) Complexes

High response organic ultraviolet photodetectors(UV-PDs) were demonstrated with 4,4',4'- tris[3-methyl-pheny(phenyl)amino]triphenylamine(m-MTDATA) and two Re(I) complexes, (bathocuproine)- Re(CO)₃Cl(Re-BCP) and (bathophenanthroline)Re(CO)₃Cl(Re-Bphen) to act as the electron donor and acceptor, respectively. UV-PDs have the configuration of indium tin oxide(ITO)/m-MTDATA(25 nm)/m-MTDATA:Re-complex (25―35 nm)/Re-complex(20 nm)/LiF(1 nm)/Al(200 nm) with different blend layer thicknesses of 25, 30 and 35 nm. The optimized PD based on Re-Bphen offers a corrected-dark photocurrent up to 760 μA/cm² at ?10 V, corresponding to a response of 310 mA/W which is among the best values reported for organic UV-PDs. Excellent electron transport ability makes for such high photo-to-electron conversion.     

具有光电倍增的宽光谱三相体异质结有机彩色探测器

实验研究了P3HT：PBDT-TT-F：PCBM三相体异质结活性层光谱拓宽及其材料混合度对探测器光电特性的影响以及陷阱辅助光电倍增的机理.在此基础上,获得了一个覆盖350–750 nm波长范围的彩色探测器.该探测器在-1 V低偏压下红绿蓝三基色的光响应度和外量子效率分别达到了470,381,450 mA/W和93%,89%,121%,比探测率均接近10¹² Jones,且各基色的特性参数最大平均相对偏差均小于20%,同时频率带宽分别达到了5,8,8 kHz.结果表明：在保持二相体异质结薄膜原有微观形貌下,掺入少量光谱拓宽材料可实现活性层吸收光谱的拓宽.利用能级陷阱中电子的辅助作用引入外电路空穴注入,可实现探测器光电倍增.通过调节三相材料的混合度可实现基色间探测能力的均衡性.     

Graphene integrated photodetectors and opto-electronic devices — a review

Graphene and other two-dimensional materials have recently emerged as promising candidates for next-generation,high-performance photonics. In this paper, the progress of research into photodetectors and other electro-optical devices based on graphene integrated silicon photonics is briefly reviewed. We discuss the performance metrics, photo-response mechanisms, and experimental results of the latest graphene photodetectors integrated with silicon photonics. We also lay out the unavoidable performance trade-offs in meeting the requirements of various applications. In addition, we describe other opto-electronic devices based on this idea. Integrating two-dimensional materials with a silicon platform provides new opportunities in advanced integrated photonics.     

Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors

Two-dimensional(2D) materials, such as graphene and Mo S2 related transition metal dichalcogenides(TMDC), have attracted much attention for their potential applications. Ferroelectrics, one of the special and traditional dielectric materials,possess a spontaneous electric polarization that can be reversed by the application of an external electric field. In recent years, a new type of device, combining 2D materials with ferroelectrics, has been fabricated. Many novel devices have been fabricated, such as low power consumption memory devices, highly sensitive photo-transistors, etc. using this technique of hybrid systems incorporating ferroelectrics and 2D materials. This paper reviews two types of devices based on field effect transistor(FET) structures with ferroelectric gate dielectric construction(termed Fe FET). One type of device is for logic applications, such as a graphene and TMDC Fe FET for fabricating memory units. Another device is for optoelectric applications, such as high performance phototransistors using a graphene p-n junction. Finally, we discuss the prospects for future applications of 2D material Fe FET.     

高速高效光电探测器的制备、测试及特性分析

报道了一种垂直入射的InP基InGaAs pin光电探测器,介绍了它的制备和测试方法并对器件所展示出的高效,高速,高线性度特性进行了分析。器件的暗电流密度在0和-5V偏压时分别为1.37×10-5 A/cm2和93×10-5 A/cm2;在1.55μm波长,-3V偏压下,器件的线性光响应高达28mW,相应的最大线性电流为17mA,响应度达到0.61A/W(无减反射膜);在-5V偏压下,器件获得高达17.5GHz的3dB带宽。     

PIN光电探测器低噪声前置放大电路设计

该文设计了一款PIN光电探测器的低噪声前置放大电路,选用低噪声器件,设计带通滤波电路,实现阻抗匹配,消除噪声。该电路由＋15V和±5V三电源驱动,照射激光波长λ=850nm,光脉冲频率f=10kHz,光脉冲宽度τ=20ns。通过软件仿真及实物测试,达到响应度Re（V/W）≥2×10^5,上升时间Tr（ns）≤13,暗噪声电压峰峰值VN（mV）≤10,闭环增益A（dB）≥60等指标,表明该文方法可以为低噪声前置放大电路设计提供指导。     

Double-peaked decay of transient photovoltage in nanoporous ZnO/n-Si photodetector

In the present work,a nanoporous ZnO/n-Si structure has been proposed as a new type infrared photodetector.Triggered by one laser pulse with wavelength of 1064 nm,this structure exhibits a double-peak decay of transient photovoltage.Also,the time interval between these two peaks increases linearly with the increase of irradiated pulsed energy,indicating the promising application of this hetero-junction in photo-energy detection of infrared pulsed laser.A possible mechanism for this particular photoresponse has been discussed.