稀土发光和贮氢材料研究进展

本文结合我们自己的工作总结和概括了稀土发光材料和贮氢材料最近几年来的研究和应用新进展。     

高能量激发的发光材料

从不同材料在高能量密度激发下在激发、传递和发光等不同阶段中的效率变化,了解各种材料在高密度激发时的能量损失的主要环节,分清基质和发光中心的选择原则。为投影电视荧光粉和细管灯粉寻找具有较高效率的发光材料,在X线影像板的光激励材料的研制和γ线影像板的可行性分析方面也得到了一些结果。     

长余辉发光材料在陶瓷行业的应用研究

长余辉发光材料和陶／搪瓷材料的结合始于80年代,当时采用的是传统的硫化物体系长余辉发光材料。20世纪90年代,随着多种新型长余辉材料的发现,使性能更佳的长余辉陶／搪瓷制品的开发成为可能。本文介绍新型铝酸盐体系、硅酸盐体系及新型红色长余辉材料应用于低温陶／搪瓷釉料（800－900℃）、中温陶瓷釉料（980－1100℃）,及将低温陶／搪瓷釉料、中温陶瓷釉料应用于陶／搪瓷制品的研究,以及将各种新型长余辉材料应用于花纸、玻璃行业中。这种长余辉陶／瓷制品性能稳定、发光强度达到发光粉的80％,发光时间可达12h以上;而且应用工艺简单,可直接用传统的陶／搪瓷制品工艺进行生产。     

Decay characteristics of SrS:Nd phosphors

The phosphorescence decay of a series of strontium sulphide microcrystalline phosphors prepared with varying amounts of neodymium as an activator has been studied at room temperature. The decay obeys the relationI =I ₀ t ^−b withb lying between 0·35 and 0·98. The trap depths have been evaluated by peeling off logI-t curves. The results show that the distribution of trap levels is likely to be quasi-uniform and the process of retrapping during luminescence is negligible.     

A survey of phosphors novel for thermography

With regard to phosphor thermometry, seven luminescent ceramic materials were synthesised and characterised, namely CaMoO₄:Eu³⁺, CaTiO₃:Pr³⁺, LaPO₄:Eu³⁺, LaVO₄:Eu³⁺, LiAl₅O₈:Fe³⁺, TiMg₂O₄:Mn⁴⁺ and ZnGa₂O₄:Mn²⁺. In this context, emission spectra and temperature lifetime characteristics are presented. Thus, a survey of phosphors novel for thermography is given in order to encourage further studies and more detailed characterisations of the respective materials.     

Tailoring of Deep‐Red Luminescence in Ca2SiO4:Eu2+

We report a new dicalcium silicate phosphor, Ca_2?xEu_xSiO₄, which emits red light in response to blue‐light excitation. When excited at 450 nm, deep‐red emission at 650 nm was clearly observed in Ca_1.2Eu_0.8SiO₄, the external and internal quantum efficiencies of which were 44 % and 50 %, respectively. The red emission from Ca_2?xEu_xSiO₄ was strongly related to the peculiar coordination environments of Eu²⁺ in two types of Ca sites. The red‐emitting Ca₂SiO₄:Eu²⁺ phosphors are promising materials for next‐generation, white‐light‐emitting diode applications.     

Dual‐Shelled RbLi(Li3SiO4)2:Eu2+@Al2O3@ODTMS Phosphor as a Stable Green Emitter for High‐Power LED Backlights

The stability of luminescent materials is a key factor for the practical application in white light‐emitting diodes (LEDs). Poor chemical stability of narrow‐band green‐emitting RbLi(Li₃SiO₄)₂:Eu²⁺ (RLSO:Eu²⁺) phosphor hinders their further commercialization even if they have excellent stability against thermal quenching. Herein, we propose an efficient protection scheme by combining the surface coating of amorphous Al₂O₃ and hydrophobic modification by octadecyltrimethoxysilane (ODTMS) to construct the moisture‐resistant dual‐shelled RLSO:Eu²⁺@Al₂O₃@ODTMS composite. The growth mechanisms of both the Al₂O₃ inorganic layer and the silane organic layer on the phosphor surface are investigated. The results remarkably improve the water‐stability of this narrow‐band green emitter. The evaluation of the white LED by employing this composite as the green component demonstrates that RLSO:Eu²⁺@Al₂O₃@ODTMS is a promising candidate for the high‐performance display backlights, and this dual‐shelled strategy provides an alternative method to improve the moisture‐resistant property of humidity‐sensitive phosphors.     

Electroluminescence in the phosphor anthracene doped by 9-vinylanthracene

Electroluminescence has been excited in the phosphor anthracene doped by 9-vinylanthracene (10⁻⁴ mole %) at room temperature (300°K). Variation of light output with voltage is governed by the relationB=B ₀ exp [−(C/V ^1/2)] as in the case of inorganic phosphors. HereB ₀ andC are constants andV is the rms value of the voltage applied to the phosphor. Frequency dependence of the electroluminescence has also been studied at different voltages of the applied electric field.     

Waterproof Alkyl Phosphate Coated Fluoride Phosphors for Optoelectronic Materials

A facile approach for coating red fluoride phosphors with a moisture‐resistant alkyl phosphate layer with a thickness of 50–100 nm is reported. K₂SiF₆:Mn⁴⁺ particles were prepared by co‐precipitation and then coated by esterification of P₂O₅ with alcohols (methanol, ethanol, and isopropanol). This route was adopted to encapsulate the prepared phosphors using transition‐metal ions as cross‐linkers between the alkyl phosphate moieties. The coated phosphor particles exhibited a high water tolerance and retained approximately 87 % of their initial external quantum efficiency after aging under high‐humidity (85 %) and high‐temperature (85 °C) conditions for one month. Warm white‐light‐emitting diodes that consisted of blue InGaN chips, the prepared K₂SiF₆:Mn⁴⁺ phosphors, and either yellow Y₃Al₅O₁₂:Ce³⁺ phosphors or green β‐SiAlON: Eu²⁺ phosphors showed excellent color rendition.     

Sb,Bi,Zr,Si元素微量掺杂对荧光粉YAG：Ce发光性能的影响

采用高温固相法分别合成了Sb3+,Bi3+,Zr4+,Si4+共掺杂的YAG∶Ce黄色荧光粉。研究了YAG∶Ce黄色荧光粉的发光强度随元素种类以及微量掺杂浓度的变化情况及相关机理。结果显示,随着元素Sb3+,Bi3+,Zr4+,Si4+掺杂浓度的增加,发射峰强度均表现出先增大后减小的趋势。Sb3+,Bi3+与Ce3+之间存在多极子相互作用和辐射再吸收的能量传递及晶格修复作用,当Sb3+,Bi3+掺杂浓度分别为0.5和0.1 mmol时发射峰强度达到最大值,分别提高了35.5%和44.8%。在YAG∶Ce中由于Zr4+,Si4+的电荷补偿作用,促进Ce4+→Ce3+的转化,从而提高了YAG∶Ce的发光强度。Zr4+,Si4+掺杂浓度分别在0.3和7 mmol时达到最大值,分别提高了27.4%和31.2%。由荧光粉颗粒形貌可知,Sb3+,Bi3+,Zr4+,Si4+元素的微量掺杂能促使晶粒长大,并且近似球型,导致发光强度有明显的提高。