掺杂LiF的ESR谱和ENDOR谱研究

LiF:Mg,Cu热释光(TL)磷光体在γ辐照后产生F⁰顺磁中心,其g因子为g_xx=2.0030,g_yy=2.0450,g_zz=2.0251,裂分为A_xx=511.04G,A_yy=505.42G,A_zz=507.26G。F⁰中心的浓度随Mg⁺⁺浓度的增加而下降。磷光体的ENDOR谱显示F⁰中心附近有铜核存在。照射前和照射后24h测量均未发现Cu⁺⁺的ESR谱,表明铜是以Cu⁺形式掺入的,照射并未引起Cu⁺离子化合价的改变。LiF:Mg,Cu,P在γ辐照前具有轴对称的Cu⁺⁺离子的ESR谱,辐照后产生了O^-空穴中心和PO₃^2-自由基,改变了Cu⁺⁺的环境,使Cu⁺⁺的谱发     

A novel yellow emitting phosphor Dy3+, Bi3+ co-doped YVO4 potentially for white light emitting diodes

Novel Y1 x yVO4:xDy3+,yBi3+(0.01 ≤ x ≤ 0.05,0 ≤ y ≤ 0.20) phosphors for light emitting diode(LED) were successfully synthesised by solid-state reaction.The calculation results of electronic structure show that YVO4 has a direct band gap with 3 eV at G.The top of the valence band is dominated by O 2p state and the bottom of the conduction band is mainly composed of O 2p and V 3d states.An efficient yellow emission under near-ultraviolet(365 nm) excitation is observed.Compared with the pure YVO4:Dy3+ samples,the Dy3+,Bi3+ co-doped samples show a more intensive emission peak(at 574 nm) and a new broad emission band(450-770 nm),due to the 4F9/2 6H13/2 transition of Dy3+ and the emission of the VO3 4 Bi3+ complex respectively.The optimum chromaticity index of Y1 x yVO4:xDy3+,yBi3+(0.01 ≤ x ≤ 0.05,0 ≤ y ≤ 0.20) is(0.447,0.497),which indicates that YVO4:Dy3+,Bi3+ has higher colour saturation than the commercial phosphor YAG:Ce3+.The effects of concentration of Dy3+,Bi3+,electric states and the photoluminescence properties are discussed in details.     

Energy transfers between Sm and Eu in YPO4, LaP5O14 and LaP3O9 phosphates. Potential quantum cutters for red emitting phosphors

This work concerns the studies of energy transfers between Sm³⁺ and Eu³⁺ ions in some phosphates as new luminescent materials emitting in the orange-red color. The choose of ions is based on the possibility of quantum cutting process and the matrices are selected according to the 5d bands position of Sm³⁺ ion. The Sm³⁺ and Eu³⁺ doped YPO₄, LaP₅O₁₄ and LaP₃O₉ are synthesized and spectroscopic studies in ultraviolet and vacuum ultraviolet ranges have been achieved.     

ZnAl2O4：Tb3+荧光粉的合成、结构及其光学性能研究

通过溶胶-凝胶法制备出不同Tb³⁺掺杂浓度和不同二次煅烧温度下的ZnAl₂O₄:Tb³⁺荧光粉, 并利用X射线衍射(XRD)和荧光光谱等对样品进行了表征。由XRD结果可知,当Tb³⁺掺杂的摩尔分数不大于9%,二次煅烧温度在600℃以上时,所得粉体为结晶性良好的尖晶石相。在紫外光激发下,ZnAl₂O₄:Tb³⁺荧光粉的发射光谱由位于488 nm(⁵D₄→⁷F₆)、542 nm(⁵D₄→⁷F₅)、587 nm(⁵D₄→⁷F₄ )和621.5 nm(⁵D₄→⁷F₃)的4个发射峰组成。研究发现,Tb³⁺的掺杂浓度和二次煅烧温度对样品发光强度有着重要影响,当Tb³⁺的摩尔分数为5%,二次煅烧温度为900℃时,ZnAl₂O₄:Tb³⁺荧光粉的发光最强,继续增加Tb³⁺掺杂浓度或提高煅烧温度,分别会出现浓度猝灭和温度猝灭现象。     

白光LED用Ba3La（PO4）3∶Dy3+荧光粉的制备与发光性能

通过高温固相法合成了一系列Ba3La1-x(PO4)3∶xDy3+荧光粉材料。利用XRD测量样品的物相,结果显示样品为纯相Ba3La(PO4)3晶体。样品的激发光谱由一系列宽谱组成,峰值分别位于322,347,360,386,424,451 nm。在347 nm激发下,荧光粉在482 nm(4F9/2→6H15/2)和575 nm(4F9/2→6H13/2)处有很强的发射。研究了不同Dy3+掺杂浓度对样品发射光谱的影响,当Dy3+摩尔分数x=0.10时出现猝灭现象,浓度猝灭机理为电偶极-电偶极相互作用。确定了不同Dy3+掺杂浓度的Ba3La(PO4)3∶Dy3+的荧光寿命。Ba3La(PO4)3∶Dy3+荧光粉发射光谱的色坐标位于白光区域。     

Luminescence characteristics of K2Ca2(SO4)3:Eu,Tb micro- and nanocrystalline phosphor

K₂Ca₂(SO₄)₃ microcrystalline pure, doped with Eu, Tb and co-doped with Eu, Tb was prepared by solid-state diffusion method. Nanoparticles of these phosphors were also prepared by the chemical co-precipitation method. The formation of the compounds was confirmed by XRD. The particle size was calculated by broadening of the XRD peaks using Scherrer's formula. The particle size of nanocrystalline powder material was approximately found to be around 20 nm. Thermoluminescence and photoluminescence were studied to see the effect of co-doping and particle size. Tb³⁺ co-doping decreases the intensity in the Eu²⁺ doped phosphor due to the energy transfer and multiple de-excitations through various radiative and non-radiative processes. The sensitivity of K₂Ca₂(SO₄)₃:Eu,Tb microcrystalline phosphor was around 15 times more than LiF-TLD 100 and 7 times more than CaSO₄:Dy. A high temperature peak (615 K) was observed in case of the nanoparticles, which was attributed to a particle size induced phase transition. This was confirmed by differential scanning calormetry measurements. The decrease in the sensitivity in case of nanoparticles is attributed to the particle size effect i.e. volume to surface ratio. Theoretical analysis of the glow curves was done by glow curve convolution deconvolution method to calculate trapping parameters of various peaks.     

Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting

Solid‐state lighting (SSL) is now the most efficient source of high color quality white light ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light engine of SSL still have significant performance limitations. Foremost among these is the decrease in efficiency at high input current densities widely known as “efficiency droop.” Efficiency droop limits input power densities, contrary to the desire to produce more photons per unit LED chip area and to make SSL more affordable. Pending a solution to efficiency droop, an alternative device could be a blue laser diode (LD). LDs, operated in stimulated emission, can have high efficiencies at much higher input power densities than LEDs can. In this article, LEDs and LDs for future SSL are explored by comparing: their current state‐of‐the‐art input‐power‐density‐dependent power‐conversion efficiencies; potential improvements both in their peak power‐conversion efficiencies and in the input power densities at which those efficiencies peak; and their economics for practical SSL.     

Sr2SiO4:Eu2 荧光粉的发光性质及在白光二极管中的应用

用高温固相反应法制成了Sr2SiO4:xEu2 荧光粉.随着Eu2 掺杂浓度的增加,Sr2SiO4晶体结构从β相转换为α'相.Eu2 掺杂浓度小于等于0.5 mol%时,Sr2SiO4:Eu2 为β相,大于等于2 mol%时是α'相.β-Sr2SiO4:Eu2 的发光颜色为黄绿色,发射光谱由两个谱带组成,分别位于470 nm,535 nm处.α'-Sr2SiO4:Eu2 发光颜色为黄色,发射光谱由两个谱带组成,分别位于490 nm,570 nm处.这两个谱带具有不同的荧光寿命,归结为处于不同格位上Eu2 的发射.用近紫外芯片和这两种荧光粉制成了白光二极管.正向驱动电流为20mA时,用β-Sr2SiO4:0.0035 E2 抖制成的白光LED色温为5562 K;色坐标为x=0.32,y=0.40;显色指数为61;流明效率为15.7 lm/W.用α'-Sr2SiO4:0.02 Eu2 制成的白光LED色温为4 707 K;色坐标为x=0.36,y=0.37;最色指数为73;流明效率为6.7 lm/W.     

一种用于碳纳米管FED的荧光粉SiO2包膜处理

针对用于 FED 的荧光粉应该是适合 FED 特殊工作机理的专用阴极射线激发发光材料,提出一种以绿色荧光粉ZnS:Cu,Al 为基质,采用溶胶一凝胶法在其表面包覆一层 SiO＜2 薄膜作为 FED 用荧光粉.通过对包膜过程中的工艺条件,主要是 TEOS 浓度、溶液的 pH 值和回流温度的改变,在可拆卸式 FED 中研究生成 SiO2 薄膜包复的荧光粉对FED发光性能的影响,从而得到可获得高发光性能 FED 的包复 SiO2薄膜的最佳工艺条件.