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61.
STUDY ON PHASE PERCEPTION IN SPEECH 总被引:4,自引:0,他引:4
Tong Ming Bian Zhengzhong Li Xiaohui Dai Qijun Chen Yanpu 《电子科学学刊(英文版)》2003,20(5):387-392
The perceptual effect of the phase information in speech has been studied by auditory subjective tests. On the condition that the phase spectrum in speech is changed while amplitude spectrum is unchanged, the tests show that: (1) If the envelop of the reconstructed speech signal is unchanged, there is indistinctive auditory perception between the original speech and the reconstructed speech; (2) The auditory perception effect of the reconstructed speech mainly lies on the amplitude of the derivative of the additive phase; (3) td is the maximum relative time shift between different frequency components of the reconstructed speech signal. The speech quality is excellent while td <10ms; good while 10ms< td <20ms; common while 20ms< td <35ms, and poor while td >35ms. 相似文献
62.
63.
An effect of Berry’s phase on the NQR spectrum of the rotating powder sample is described and applied for the determination of the electric field gradient asymmetry. The proposed method involves the analysis of the frequency singularities in the NQR powder patterns of the rotating samples. The Berry’s phases for the eigenstates, associated with an adiabatically changing quadrupole hamiltonian, are calculated for nuclei with a spin I = 3/2 and I = 1 as a function of the asymmetry parameter. 相似文献
64.
The steady-state two-phase flow non-linear equation is considered in the case when one of phases has low effective permeability in some periodic set, while on the complementary set it is high; the second phase has no contrast of permeabilities in different zones. A homogenization procedure gives the homogenized model with macroscopic effective permeability of the second phase depending on the gradient and on the second order derivatives of the macroscopic pressure of the first phase. This effect cannot be obtained by classical (one small parameter) homogenization. To cite this article: G.P. Panasenko, G. Virnovsky, C. R. Mecanique 331 (2003). 相似文献
65.
M. Feng 《The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics》2002,18(3):371-377
The Raman interaction of a ultracold ion trapped with two travelling wave lasers is studied analytically with series solutions,
in the absence of the rotating wave approximation (RWA) and without restrictions of both the Lamb-Dicke limit and the weak
excitation regime. The comparison is made between our solutions and those obtained under the RWA in order to demonstrate the
validity region of the RWA. As a practical example, the preparation of Schr?dinger-cat states is proposed beyond the weak
excitation regime, using our calculations.
Received 12 March 2001 and Received in final form 16 October 2001 相似文献
66.
The aim of this paper is to highlight the added value of the generalized Gouy phase shift introduced by Siegman. Although suited for optical systems study, including those more complex than free space, we note that it did not meet the use that it deserves so far. The analysis of the whole of the ideas and analytical approaches associated to the important concept of the Gouy phase proves its effectiveness.
Usually, the resonance condition is systematically built on the basis of the equivalent empty cavity. Unfortunately, this approach does not cover some of the useful parameters of the real resonator. By means of the generalized Gouy phase and the self-consistent complex parameter q, we derive here a new approach for the calculation of the resonance condition for the real cavity. Moreover, the use of the generalized Gouy phase clearly simplifies the study of resonators, while making it possible to avoid the use of the Huygens’ Fresnel integral. 相似文献
67.
激光冲击诱发相变的实验研究 总被引:3,自引:0,他引:3
本对激光冲击是否可以诱发相变进行了试验研究。用功率密度为1.06×10^8W/cm^2的激光器冲击T8钢表面。实验结果表明激光冲击处理使T8钢的表面显微硬度有所提高并可以发生马氏体相变。冲击处理后材料表面硬度提高了两倍,认为相变是T8钢表面硬度提高的原因之一。 相似文献
68.
Aït Hmaïdouch L. Mançour Billah S. El Hadek M. 《Journal of Thermal Analysis and Calorimetry》2002,69(2):659-667
The solid—liquid equilibria of the ternary system H2O—Al(NO3)3—Mg(NO3)2 were studied at –30, –20, –10 and 0°C by using a synthetic method which allows to detemine all the characteristic points of isothermal sections. The stable solid phases which appear are respectively: ice, Al(NO3)3·9H2O, Mg(NO3)2·9H2O and Mg(NO3)2·6H2O. Neither double salts nor mixed crystals are observed in the temperature and composition field studied. Polytherm diagram layout show two invariant transformations correspond with an eutectic point and a peritectic point.This revised version was published online in November 2005 with corrections to the Cover Date. 相似文献
69.
J. W. Huang J. M. Ryan K. L. Bray T. F. Kuech 《Journal of Electronic Materials》1995,24(11):1539-1546
The defect engineering in metalorganic vapor phase epitaxy InxGa1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has
led to the incorporation of Al and O, and the compensation of shallow Si donors in InxGa1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent
of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on
a series of InxGa1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in
DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction
band and led to a high electron concentration in oxygen doped In0.53Ga0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the
near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation
of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels. 相似文献
70.
The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates
is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor.
The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties
and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow
is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is
higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature
hole mobility and hole concentration of 800 cm2 V−1 s−1 and 3·1016 cm-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence
spectrum is dominated by strong excitonic lines. 相似文献