任意型一维FIR数字滤波器设计新方法

本文介绍了一种设计任意型（宽带、窄带、低阶、高阶、低通、高通、带通、带阻）一维FIR数字滤波器新方法．给出设计不同类型滤波器的统一方法。各种类型滤波器脉冲响应的设计公式简单、计算方便。该方法消除了Gibbs现象．不仅克服了优化设计中收敛速度、设计精度及初值选取等问题，而且减少设计高阶滤波器的时间。最后，本文给出了各种类型滤波器设计的仿真结果。     

Nd：MgO：LiNbO3晶体的荧光光谱及其双晶体腔内互倍频实验

采用激光感生荧光技术测量了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３晶体的偏振荧光光谱，简要地说明了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３双晶体腔内互倍频的基本原理，并在实验中用染料激光作泵浦源实现了其双晶体腔内互倍频运转；得到５４３ｎｍ横模倍频绿光单端输出约ＹＭＷ，腔前泵浦阈值约３８ＭＷ，总转换效率约为１．３％。     

Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.     

低相噪,低杂波数字锁相环路滤波器的设计

较详细地分析数字锁相频率合成器的相位噪声，着重用控制论方法对低相噪、低杂波锁相环的环路滤波器进行设计，并用某Ｓ波段频率合成器的实验结果进行了验证。     

On estimating pressure build-up in severely accelerated,shocked flow

A new approach to the calculation of the high pressures characterizing the flow field in front of a piston undergoing severe acceleration over the short term is presented. In contrast with previous approaches where the computational domain is altered but which stop short of transforming velocities, here the problem is solved in an accelerating non-Euclidean co-ordinate system where the piston is stationary. The method is applied to a study of the problem of premature sabot separation. Through use of Harten's second-order-accurate TVD scheme, flow simulations are performed for both 1D and 3D axisymmetric geometries. The simple 1D model gives pressure profiles surprisingly close to those of the more physical 3D model.     

Analysis and optimisation of the HIPERLAN Channel Access Contention Scheme

This paper analyses the HIPERLAN channel access mechanism. Both a purely mathematical and a simulation model are built in order to evaluate the two successive phases of the contention scheme. Several optimisations, based on the choice of parametric values, are proposed, evaluated and compared.     

高频地波雷达相位补偿系统

OSMAR2000采用的是“一发八收,收发共用”模式的相控阵高频地波雷达.为了扩大其探测的范围,在新的雷达系统中将采用多发多收的模式,从而导致当信号通过通道后,信号的相位会因受到通道的调制而发生改变,使得雷达无法正常工作,因此需要对通道的相位进行实时监控和补偿.在参考了低频段的相位测量原理和射频段的相移电路的设计理论的基础上,该文提出了基于差分放大器、容阻和容感器件的高频地波雷达收发通道的相位控制系统.     

大电流监测信号提取的光收发及信号处理

近年来,大电流的监测成了人们十分关心的问题,这是由于大电流有强磁、高压、电流大等一系列的直接监测所不能克服的问题。这就需要把高压大电流的强电信号,经过提取后变成能在实验室中直接观测的弱电信号。为此,如何从高压大电流的信号中提取出随实时信号变化而实时变化的小信号就变成了一个关键问题。详细介绍了监测信号提取的光收发电路原理和后续信号处理电路,分析了各部分的作用,给出了必要的分析结果。     

高功率双工旋转场移相器

旋转场移相器具有移相精度高(均方根误差可小于1°)和温度稳定性好等特点,通过改进射频传输结构,可大大提高他的功率容量。利用旋转场移相器的互易特性和铁氧体圆极化器的非互易特性,设计出高功率双工旋转场移相器。其双工特性可将收/发信号分开,实现移相器和环行器的双重功能,用于天线的收发通道等场合时,可省去一个高功率环行器,结构紧凑。分析了双工旋转场移相器的工作原理,阐述了高功率应用下的设计方法,推导出了管状铁氧体的相移量计算公式,按此方法设计了实用的器件,并给出了试验数据。     

Physical properties and phase separation structure of Antheraea pernyi/Bombyx mori silk fibroin blend films

The physical structure and compatibility of solution-cast Antheraea pernyi/Bombyx mori silk fibroin blend films were stuided by differential scanning calorimetry (DSC), thermomechanical (TMA) and thermogravimetric (TGA) analysis, dynamic viscoelastic measurement, infrared spectroscopy, and x-ray diffractometry. The DSC curves of the blend films showed independent endotherms at 280 and 358°C, corresponding to the thermal decomposition of B. mori and A. pernyi silk fibroins with random coil conformation. The intensity was roughly proportionate to the amount of each component in the blend. The thermal behavior corresponding to the conformational transitions induced by heating on A. pernyi and B. mori silk fibroins overlapped in the temperature range 190–230°C. Thermal expansion and contraction properties, as well as weight retention behavior of the blend films were intermediate between the pure components, as shown by the TMA and TGA curves. The onset temperature of the storage modulus curve decreased markedly, approaching that of B. mori silk fibroin film when the amount of this component in the blend increased. The loss modulus curve of the blend films showed two peaks at ca. 190 and 210°C, the former corresponding to B. mori, and the latter to A. pernyi silk fibroin. Infrared spectra of the blends exhibited absorption bands characteristic of the pure components overlapping in the spectral region 2000–400 cm^?1. The x-ray diffraction peaks at 23 and 21.5°, attributed to the crystalline spacings of A. pernyi and B. mori fibroins, respectively, overlapped in the diffraction curves of the blends, while the peak at 11.4°, of A. pernyi, increased as the content of this fibroin in the blend increased. The degree of crystallinity, calculated from the x-ray diffraction curves, diminished as the amount of B. mori silk fibroin decreased. A low degree of compatibility exists between the two fibroins when they are cast from aqueous solution in the experimental conditions adopted in this work. © 1994 John Wiley & Sons, Inc.