GaN氢化物气相外延生长系统的设计与制作

根据GaN氢化物气相外延生长(HVPE)的原理,设计制作了双温区卧式HVPE系统．根据实际生长中出现的问题和CaN样品的测试情况,对系统进行了逐步的调试和改进．     

一种新的奇偶非线性相干态的位相统计性质

根据Pegg-Barnett位相定义, 计算了一种新的奇偶非线性相干态的位相概率分布函数, 利用数值计算方法研究了它们的位相统计性质. 数值计算结果表明：新的奇偶非线性相干态的位相特性与通常奇偶相干态的位相特性截然不同.     

Nanostructured thermoset epoxy resin templated by an amphiphilic poly(ethylene oxide)‐block‐poly(dimethylsiloxane) diblock copolymer

An amphiphilic poly(ethylene oxide)‐block‐poly(dimethylsiloxane) (PEO–PDMS) diblock copolymer was used to template a bisphenol A type epoxy resin (ER); nanostructured thermoset blends of ER and PEO–PDMS were prepared with 4,4′‐methylenedianiline (MDA) as the curing agent. The phase behavior, crystallization, hydrogen‐bonding interactions, and nanoscale structures were investigated with differential scanning calorimetry, Fourier transform infrared spectroscopy, transmission electron microscopy, and small‐angle X‐ray scattering. The uncured ER was miscible with the poly(ethylene oxide) block of PEO–PDMS, and the uncured blends were not macroscopically phase‐separated. Macroscopic phase separation took place in the MDA‐cured ER/PEO–PDMS blends containing 60–80 wt % PEO–PDMS diblock copolymer. However, the composition‐dependent nanostructures were formed in the cured blends with 10–50 wt % PEO–PDMS, which did not show macroscopic phase separation. The poly(dimethylsiloxane) microdomains with sizes of 10–20 nm were dispersed in a continuous ER‐rich phase; the average distance between the neighboring microdomains was in the range of 20–50 nm. The miscibility between the cured ER and the poly(ethylene oxide) block of PEO–PDMS was ascribed to the favorable hydrogen‐bonding interaction. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 3042–3052, 2006     

Interfacial reactions in In-Sn/Ni couples and phase equilibria of the In-Sn-Ni system

The In-Sn-Ni alloys of various compositions were prepared and annealed at 160°C and 240°C. No ternary compounds were found; however, most of the binary compounds had extensive ternary solubility. There was a continuous solid solution between the Ni₃Sn phase and Ni₃In phase. The Sn-In/Ni couples, made of Sn-In alloys with various compositions, were reacted at 160°C and 240°C and formed only one compound for all the Sn-In alloys/Ni couples reacted up to 8 h. At 240°C, Ni₂₈In₇₂ phase formed in the couples made with pure indium, In-10at.%Sn and In-11at.%Sn alloys, while Ni₃Sn₄ phase formed in the couples made of alloys with compositions varied from pure Sn to In-12at.%Sn. At 160°C, except in the In/Ni couple, Ni₃Sn₄ formed by interfacial reaction.     

新疆玛纳斯湖水蒸发过程研究

本文依据Na^ ,K^ ,Mg^2 //Cl^-,SO4^2--H2O五元水盐体系相图，对新疆玛纳斯盐湖水进行原料分析、理论研究、25℃等温蒸发实验和自然蒸发实验，研究了该湖水蒸发过程中盐类的析出规律及湖水中各组分浓度变化的规律，为进行工艺实验及将来的综合开发利用提供了可靠依据。     

Si基膜片型气敏传感器微结构单元的热学性能

微结构气敏传感器由于其微型化、低功耗、易阵列化和易批量生产等优点而受到国内外研究者的广泛关注。利用微机电系统（MEMS）加工技术，制备Si基膜片型微结构单元，并分析其热学性能。这种单元工作区温度为-300℃时，加热功率约75mW；并且膜片工作区的热质量很小，温度可以于毫秒量级的时间内，在室温和450℃之间调制。利用这种微结构单元，可以在温度调制方式下，研究气敏薄膜的电学特性和敏感机理。     

Infra-red free-carrier absorption due to impurity scattering in semiconducting quantum well structures

The theory of free-carrier absorption (FCA) is developed, in the extreme quantum limit when the carriers are assumed to populate only the lowest quantized energy level, for quasi-two and one-dimensional semiconducting quantum well structures where the carriers are scattered by ionized impurities. The radiation field is assumed to be polarized in the plane of the layer in the quasi-two-dimensional case and along the length of the wire in the quasi-one-dimensional case. Expressions for FCA are obtained for the cases where the impurities are either in the well (background impurities) or outside the well (remote impurities). Variation of FCA is numerically studied with photon frequency and well width.     

Novel model of FM-noise conversion in a UMZI using RF external phase modulation of lasers: Theoretical and experimental results

In this paper, we propose and demonstrate a new and original model for theoretical calculation and experimental measurement of the noise power spectral density (NPSD) in phase-modulated optical links. The phase modulation is operated in the RF frequency range by an external phase modulator. The NPSD is derived for the first time in interferometric systems, by considering all effects such as the 1/f FM noise of the laser and white noise applied to light from a 1550 nm DFB laser, with phase modulation. The results show for the first time the influence of the phase modulation index, modulation frequency and interferometric delay in the phase-to-intensity noise conversion. The experimental and simulation results of conversion of FM-noise to intensity noise in an optical link by considering the external RF phase modulation are shown with good agreement.     

A study of structural, compositional and optical properties of spray-deposited non-stoichiometric (Zn,Fe)S thin films

Non-stoichiometric ternary chalcogenides (Zn,Fe)S were prepared in the film form by pyrolytic spray deposition technique, using air/nitrogen as the carrier gas. The precursor solution comprised of ZnCl₂, FeCl₂ and thiourea. The depositions were carried out under optimum conditions of experimental parameters viz. carrier gas (air/nitrogen) flow rate, concentration of precursor constituents, nozzle substrate distance and temperature of quartz substrate. The deposited thin films were later sintered in argon at 1073 K for 120 min.The structural, compositional and optical properties of the sintered thin films were studied. X-ray diffraction studies of the thin films indicated the presence of (Zn,Fe)S solid solution with prominent cubic sphalerite phase while surface morphology as determined by scanning electron microscopy (SEM) revealed a granular structure.The chemical composition of the resulting thin films as analyzed by energy dispersive X-ray analysis (EDAX) reflected the composition of the precursor solutions from which the depositions were carried out with Fe at% values ranging from 0.4 up to 33.SEM micrographs of thin films reveal that the grain sizes of the thin films prepared using air as carrier gas and N₂ as carrier gas are in the vicinity of 300 and 150 nm, respectively.The diffuse transmittance measurements for thin films, as a function of wavelength reveal the dependence of direct optical band gap on Fe content and type of phase.