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131.
Epitaxial CdTe layers were grown using organometallic vapor phase epitaxy on Si substrates with a Ge buffer layer. Ge layer
was grown in the same reactor using germane gas and the reaction of germane gas with the native Si surface is studied in detail
at low temperature. It is shown that germane gas can be used to “clean” the Si surface oxide prior to CdTe growth by first
reducing the thin native oxide that may be present on Si. When Ge layer was grown on Si using germane gas, an induction period
was observed before the continuous layer of Ge growth starts. This induction period is a function of the thickness of the
native oxide present on Si and possible reasons for this behavior are outlined. Secondary ion mass spectrometry (SIMS) data
show negligible outdiffusion and cross contamination of Ge in CdTe. 相似文献
132.
J. Shin Y. Hsu T. C. Hsu G. B. Stringfellow R. W. Gedridge 《Journal of Electronic Materials》1995,24(11):1563-1569
GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using
the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium
(TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III
ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb.
In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the
TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at
temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga1-xInxSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of
graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between
1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging
from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of
graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak
energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all
p-type with carrier concentrations of approximately 1017 cm3. Transmission electron diffraction studies indicate that the Ga0.5In0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This
is the first report of ordering in GalnSb alloys. 相似文献
133.
Hans C. Fogedby 《Journal of statistical physics》1992,69(1-2):411-425
We elaborate in some detail on a new phase space approach to complexity, due to Y.-C. Zhang. We show in particular that the connection between maximal complexity and power law noise or correlations can be derived from a simple variational principle. For a 1D signal we find 1/f noise, in accordance with Zhang. 相似文献
134.
本文采用高压X光衍射方法在金刚石对顶压砧中在位地(in situ)研究了Fe68Co24Ni8(wt%)合金在室温下的压致bcc→hcp结构相变和直到40.5 GPa的等温压缩行为。实验结果表明该合金在常压下为bcc结构,晶格常数a0=(0.287 0±0.000 1) nm,体积V0=(7.119±0.007) cm3/mol,密度ρ0=(7.981±0.008) g/cm3;在20.9 GPa附近出现bcc→hcp结构相变,两相共存压力区约10 GPa,在此区域内有晶面间距d(002)hcp=d(110)bcc,且原子平面(002)hcp//(110)bcc,hcp相比bcc相体积减小(0.33±0.02) cm3/mol;高压相hcp结构的晶格参数比值c/a=1.608±0.004;相变后原子配位数的增加使得hcp相(002)平面内及(002)平面间的最近邻原子间距比bcc相最近邻原子间距分别增大约1.6%和0.5%;用Murnaghan状态方程对实验数据进行最小二乘法拟合,得到bcc相B0=(130±13) GPa,B0'=12.6±0.5;hcp相V0=(6.62±0.04) cm3/mol,B0=(243±21) GPa,B0'=6.8±0.3;对于该合金的bcc→fcp相变时的结构转变机制做了详细的讨论。 相似文献
135.
136.
用粒子(PIC,Particle-in-Cell)模拟方法研究了当前颇感兴趣的高功率振荡器的锁相问题。给出了模拟计算结果。讨论了锁相(Phase Locking)、Priming和InjectionSeeding等概念的区别。 相似文献
137.
Poly (n-butylisocyanate)-benzene solutions prepared by solubilization at 45°C, followed by aging at room temperature were found to be metastable for months, although, eventually, they separated into a birefringent polymer-rich phase and an isotropic solution. These metastable solutions, as well as isothermally phase-separated biphasic samples, flowed and exhibited dynamic moduli indicative of low polymer connectivity. By contrast samples prepared by a freeze-thaw cycle were uniformly and highly birefringent and showed network (gel) behavior at room temperature. The mechanism of gel formation is most likely the exclusion of the polymer from the benzene crystal during crystallization, forcing the polymer to align and exist at grain boundaries. Films formed from solutions have different moduli than those formed from gels, and are consistent with the proposed mechanism. 相似文献
138.
轴端沟槽底部激光强化工艺参数优化研究 总被引:1,自引:1,他引:0
分析了选用不同激光能量密度对HT300进行表面强化处理时,材料表面呈现的四种状况;未相变硬化、相变硬化、表面微熔与表面熔凝的金相组织。根据工艺要求,选取相变硬化方法对轴端沟槽底表面进行处理。分析了工件激光处理方法并通过试验研究,寻找轴端沟槽底部激光强化工艺参数;激光功率(P)、光斑直径(D)及扫描速度(V)的优化组合。硬度测试及耐磨性能试验表明:激光相变处理和激光熔凝处理后轴端沟槽底部表面较表面感应淬火硬度分别提高7%和34%,绝对磨损体积分别下降了13%和25%。实践证实,对轴端沟槽底部激光相变硬化处理方法较其他表面处理方法工艺简单,加工工件符合技术要求,试验结果对零件表面处理提供了可靠依据。 相似文献
139.
P. Kurpas A. Oster M. Weyers A. Rumberg K. Knorr W. Richter 《Journal of Electronic Materials》1997,26(10):1159-1163
Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy.
The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH3 over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution
x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy
of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V
heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring. 相似文献
140.
The structural phase transition from orthorhombic (T) phase to tetragonal (T′) phase in substituted La2−x
R
x
CuO4 (R = Pr, Nd, Sm, Eu and Gd) and T′ to T-phase in Pr2−x
M
x
CuO4−y
(M = Sr, Ca) has been studied by X-ray diffraction technique. The T-phase of La2CuO4 is transferred to T′ phase abruptly atx=0.8, 0.4, 0.4, 0.3 and 0.4 respectively for substitution of Pr, Nd, Sm, Eu and Gd for La in La2CuO4 without evidence of the T* phase. The T′ structure of Pr2CuO4 (x = 0.0) gets transformed to the T* structure at 30% Ca doping (x=0.6) and then to the T structure at 50% Ca doping (x=1.0), while for Sr-contentx=0.0, 0.4 and 1.0 it shows T′, T* and T structure respectively. 相似文献