Series solution to the laser-ion interaction in a Raman-type configuration

The Raman interaction of a ultracold ion trapped with two travelling wave lasers is studied analytically with series solutions, in the absence of the rotating wave approximation (RWA) and without restrictions of both the Lamb-Dicke limit and the weak excitation regime. The comparison is made between our solutions and those obtained under the RWA in order to demonstrate the validity region of the RWA. As a practical example, the preparation of Schr?dinger-cat states is proposed beyond the weak excitation regime, using our calculations. Received 12 March 2001 and Received in final form 16 October 2001     

Revisiting Gouy phase

The aim of this paper is to highlight the added value of the generalized Gouy phase shift introduced by Siegman. Although suited for optical systems study, including those more complex than free space, we note that it did not meet the use that it deserves so far. The analysis of the whole of the ideas and analytical approaches associated to the important concept of the Gouy phase proves its effectiveness.

Usually, the resonance condition is systematically built on the basis of the equivalent empty cavity. Unfortunately, this approach does not cover some of the useful parameters of the real resonator. By means of the generalized Gouy phase and the self-consistent complex parameter q, we derive here a new approach for the calculation of the resonance condition for the real cavity. Moreover, the use of the generalized Gouy phase clearly simplifies the study of resonators, while making it possible to avoid the use of the Huygens’ Fresnel integral.     

激光冲击诱发相变的实验研究

本对激光冲击是否可以诱发相变进行了试验研究。用功率密度为１．０６×１０＾８Ｗ／ｃｍ＾２的激光器冲击Ｔ８钢表面。实验结果表明激光冲击处理使Ｔ８钢的表面显微硬度有所提高并可以发生马氏体相变。冲击处理后材料表面硬度提高了两倍，认为相变是Ｔ８钢表面硬度提高的原因之一。     

Diagramme polythermique du systeme ternaire H2O—Al(NO3)3—Mg(NO3)2

The solid—liquid equilibria of the ternary system H₂O—Al(NO₃)₃—Mg(NO₃)₂ were studied at –30, –20, –10 and 0°C by using a synthetic method which allows to detemine all the characteristic points of isothermal sections. The stable solid phases which appear are respectively: ice, Al(NO₃)₃·9H₂O, Mg(NO₃)₂·9H₂O and Mg(NO₃)₂·6H₂O. Neither double salts nor mixed crystals are observed in the temperature and composition field studied. Polytherm diagram layout show two invariant transformations correspond with an eutectic point and a peritectic point.This revised version was published online in November 2005 with corrections to the Cover Date.     

Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

The defect engineering in metalorganic vapor phase epitaxy In_xGa_1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in In_xGa_1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In_xGa_1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In_0.53Ga_0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.     

Phase equilibria in InAsSbP quaternary alloys grown by liquid phase epitaxy

The quaternary alloy InAs_1−x−ySb_xP_y, lattice-matched to InAs, is a promising material for the production of infrared light sources for the detection of gases in the 2–4 μm region of the spectrum. In this work, thermodynamic phase equilibrium calculations have been carried out to determine the compositions required for liquid phase epitaxial growth and the extent of the miscibility gap in the solid material. For high band gap materials, the desired growth temperature is found to be intermediate between a low temperature required to grow P-rich solids and higher temperatures required to avoidspinodal decomposition. Conventional LPE growth at an intermediate temperature of 583°C is found to produce good material with high luminescence efficiency and excellent optical characteristics. Problems with phosphorus loss from the melt are also discussed and lower growth temperatures are found to considerably reduce this problem. Growth in the metastable region between the binodal and spinodal lines has been achieved with the production of phosphorus-rich solids with concentrations up to y = 0.445.     

有自聚焦功能的付里叶计算全息

在制作付里叶计算全息过程中，加入适当的二次位相因子，使此种全息图在相干光照明下就可预定的位置上只再现一个像，省略了过去丙现此种计算全息图必要的付里叶透镜，并且使两个互为共轭像分离，从而拓宽了此种计算全息的应用领域，实验结果与理论分析相符。     

相转移法制备高纯超细TiO2技术研究

报道了用相转移法制备高纯超细ＴｉＯ２的新技术；探讨了Ｔｉ（Ⅳ）从有机相转移到水相发生水解反应的机理 ；通过ＴＧ－ＤＴＡ分析以及ＸＲＤ物相分析对水解产物的组成、热分解机理，晶型转变规律进行了研究，建立了水解产物焙烧的最佳温度。     

Growth of high-quality GaSb by metalorganic vapor phase epitaxy

The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor. The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature hole mobility and hole concentration of 800 cm² V⁻¹ s⁻¹ and 3·10¹⁶ cm^-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence spectrum is dominated by strong excitonic lines.     

激光相变硬化对离子渗氮层的影响

采用ＸＰＳ研究了３５ＣｒＭｏ钢离子氮化加激光相变硬化复合处理后不同层深处氮的变化。结果指出，复合工艺可在表层获得更深的氧氮化物层，含氮层的深度也将加大，并且与原渗氮层相比可在更深的位置得到氮化物层。