Determination of the electric field gradient asymmetry from Berry’s phase in NQR of powder samples

An effect of Berry’s phase on the NQR spectrum of the rotating powder sample is described and applied for the determination of the electric field gradient asymmetry. The proposed method involves the analysis of the frequency singularities in the NQR powder patterns of the rotating samples. The Berry’s phases for the eigenstates, associated with an adiabatically changing quadrupole hamiltonian, are calculated for nuclei with a spin I = 3/2 and I = 1 as a function of the asymmetry parameter.     

Homogenization of two-phase flow: high contrast of phase permeabilityHomogénéisation d'écoulement diphasique : grand contraste de perméabilité d'une phase

The steady-state two-phase flow non-linear equation is considered in the case when one of phases has low effective permeability in some periodic set, while on the complementary set it is high; the second phase has no contrast of permeabilities in different zones. A homogenization procedure gives the homogenized model with macroscopic effective permeability of the second phase depending on the gradient and on the second order derivatives of the macroscopic pressure of the first phase. This effect cannot be obtained by classical (one small parameter) homogenization. To cite this article: G.P. Panasenko, G. Virnovsky, C. R. Mecanique 331 (2003).     

Series solution to the laser-ion interaction in a Raman-type configuration

The Raman interaction of a ultracold ion trapped with two travelling wave lasers is studied analytically with series solutions, in the absence of the rotating wave approximation (RWA) and without restrictions of both the Lamb-Dicke limit and the weak excitation regime. The comparison is made between our solutions and those obtained under the RWA in order to demonstrate the validity region of the RWA. As a practical example, the preparation of Schr?dinger-cat states is proposed beyond the weak excitation regime, using our calculations. Received 12 March 2001 and Received in final form 16 October 2001     

Revisiting Gouy phase

The aim of this paper is to highlight the added value of the generalized Gouy phase shift introduced by Siegman. Although suited for optical systems study, including those more complex than free space, we note that it did not meet the use that it deserves so far. The analysis of the whole of the ideas and analytical approaches associated to the important concept of the Gouy phase proves its effectiveness.

Usually, the resonance condition is systematically built on the basis of the equivalent empty cavity. Unfortunately, this approach does not cover some of the useful parameters of the real resonator. By means of the generalized Gouy phase and the self-consistent complex parameter q, we derive here a new approach for the calculation of the resonance condition for the real cavity. Moreover, the use of the generalized Gouy phase clearly simplifies the study of resonators, while making it possible to avoid the use of the Huygens’ Fresnel integral.     

On the Stability of Bifurcation Diagrams of Vanishing Flattening Points

On a smooth surface in Euclidean 3-space, we consider vanishing curves whose projections on a given plane are small circles centered at the origin. The bifurcations diagram of a parameter-dependent surface is the set of parameters and radii of the circles corresponding to curves with degenerate flattening points. Solving a problem due to Arnold, we find a normal form of the first nontrivial example of a flattening bifurcation diagram, which contains one continuous invariant.     

激光冲击诱发相变的实验研究

本对激光冲击是否可以诱发相变进行了试验研究。用功率密度为１．０６×１０＾８Ｗ／ｃｍ＾２的激光器冲击Ｔ８钢表面。实验结果表明激光冲击处理使Ｔ８钢的表面显微硬度有所提高并可以发生马氏体相变。冲击处理后材料表面硬度提高了两倍，认为相变是Ｔ８钢表面硬度提高的原因之一。     

Diagramme polythermique du systeme ternaire H2O—Al(NO3)3—Mg(NO3)2

The solid—liquid equilibria of the ternary system H₂O—Al(NO₃)₃—Mg(NO₃)₂ were studied at –30, –20, –10 and 0°C by using a synthetic method which allows to detemine all the characteristic points of isothermal sections. The stable solid phases which appear are respectively: ice, Al(NO₃)₃·9H₂O, Mg(NO₃)₂·9H₂O and Mg(NO₃)₂·6H₂O. Neither double salts nor mixed crystals are observed in the temperature and composition field studied. Polytherm diagram layout show two invariant transformations correspond with an eutectic point and a peritectic point.This revised version was published online in November 2005 with corrections to the Cover Date.     

Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

The defect engineering in metalorganic vapor phase epitaxy In_xGa_1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in In_xGa_1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In_xGa_1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In_0.53Ga_0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.     

Growth of high-quality GaSb by metalorganic vapor phase epitaxy

The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor. The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature hole mobility and hole concentration of 800 cm² V⁻¹ s⁻¹ and 3·10¹⁶ cm^-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence spectrum is dominated by strong excitonic lines.     

InSb,GaSb, and GaInSb grown using trisdimethylaminoantimony

GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium (TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb. In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga_1-xIn_xSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between 1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all p-type with carrier concentrations of approximately 10¹⁷ cm³. Transmission electron diffraction studies indicate that the Ga_0.5In_0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This is the first report of ordering in GalnSb alloys.