离子辐照引起的金属／绝缘体界面混合与相变研究

载能离子穿过固体界面引起界面原子迁移使界面原子混合和物质成分变化，从而导致界面发生材料相变。简要介绍了载能离子辐照引起金属／绝缘体界面混合效应及相变现象的主要实验研究进展、低能离子和高能离子辐照引起金属／绝缘体界面现象差异，并对离子辐照引起界面混合及相变的机制进行了初步探讨。When penetrating an interface between two kind of solids, energetic ions can induce atomic diffusion at both sides of the interface and then result in intermixing, atom re-distribution or composition change, as well as phase transformation. Main progress on the study of intermixing and phase change at metal/insulator interface induced by energetic ion irradiations, the difference of phenomena occurred at metal/insulator interfaces induced by high-and low-energy ions were briefly reviewed. Furthermore, the possible mechanisms related to intermixing and phase change at metal/insulator interface produced by energetic ion irradiations were also discussed in short words.     

Two-spin-majority cellular automaton as a model of 2D cluster and interface growth

A new probabilistic cellular automaton model is introduced to simulate cluster and interface growth in two dimensions. The dynamics of this model is an extension to higher dimensions of the compact directed percolation studied by Essam. Numerical results indicate that the two-dimensional cluster coarsening and growth can be described only approximately by the conventional cluster size scaling due to a crossover in the growth mode. The spreading of the initially flat interface follows a purely diffusional,t ^1/2, law.     

Al-Cu-Fe系初生准晶相凝固过程的电子显微分析

采用包括金相（OM），粉末X射线衍射（XRD），扫描电子显微镜（SEM）观察和透射电子显微（TEM）分析等方法，研究了铸态Al592.Cu36.8Fe3.0Si1.0合金（700℃保温2．5h后水淬）的显微组织及相组成。发现铸锭中存在4种相：准晶I相，τ3相（或φ相），θ－Al2Cu相和η－AlCu相，凝固过程可描述为：初生晶是准晶Ⅰ相；在保温过程中发生包晶或共晶反应（L＋i→τ3(或φ）或L→τ3（或φ）＋i)形成的τ3相（或φ相），呈微畴结构；而剩余液体水淬形成θ－Al2Cu相和η－AlCu 相。     

Measurement of surface topography by RGB Shadow-Moiré with direct phase demodulation

In this paper we present the application of a direct demodulation method for the measurement of surface topography by means of Shadow-Moiré. In our set-up, we use three LEDs (with green, red and blue peak wavelengths) to illuminate the grating. Due to the different position of these light sources, a polychromatic Shadow-Moiré fringe pattern is produced, which can be described as the superposition of three monochromatic (red, green and blue) fringe patterns. Taking the image of this polychromatic fringe pattern with a RGB CCD camera, we get a monochromatic fringe pattern stored at each RGB channel of the CCD. The direct demodulation algorithm employed uses these fringe patterns to calculate the wrapped phase map. After unwrapping the phase map using a standard multi-grid technique, we implemented an automatic procedure to detect the area of interest of the phase map by removing low modulation zones and to calculate the absolute value of the phase. In this way it is possible to determine the topography of a surface with a single RGB snapshot maintaining a simple experimental set-up, which is an important feature, especially for the study of dynamic phenomena such as deformations. We present the experimental results obtained after measuring different objects with both smooth and rough surface textures.     

利用莫尔条纹的准正弦特性的三维轮廓术

分析了两个矩形光栅迭合产生的莫尔条纹的光强分布特性，通过选择适当的光栅参数，可得到一个近似的正弦分划板，并把它用于三维面形测量中，实验结果表明，这种方法简单，易于自动处理，有广泛的实用价值。     

Optimized analysis of the critical behavior in polymer mixtures from Monte Carlo simulations

A complete outline is given for how to determine the critical properties of polymer mixtures with extrapolation methods similar to the Ferrenberg-Swendsen techniques recently devised for spin systems. By measuring not only averages but the whole distribution of the quantities of interest, it is possible to extrapolate the data obtained in only a few simulations nearT _c over the entire critical region, thereby saving at least 90% of the computer time normally needed to locate susceptibility peaks or cumulant intersections and still getting more precise results. A complete picture of the critical properties of polymer mixtures in the thermodynamic limit is then obtained with finite-size scaling functions. Since the amount of information extracted from a simulation in this way is drastically increased as compared to conventional methods, the investigation of mixtures with long chains or built-in asymmetries is now possible. As an example, the critical points, exponents, and amplitudes of dense, symmetric polymer mixtures with chain lengths ranging fromN=16 up toN=256 are determined within the framework of the 3D bond fluctuation model using grand canonical simulation techniques. As an example for an asymmetry, the generalization of the method to asymmetric monomer potentials is briefly discussed.     

基于最小截面差的相位展开

相位展开 (PhU)问题从理论上讲是一个不适定问题。根据被测物理量的整体连续性 ,提出了一种基于最小截面差的相位展开方法。理论分析和对实验条纹图的处理结果表明 ,该方法特别适合于具有相位间断大于π ,条纹欠采样及随机噪声等条纹图的相位展开。同支切 (Branchcuts)法相比 ,该方法具有算法简单、计算量小且可靠度高的特点 ,具有一定的实用性。     

任意型一维FIR数字滤波器设计新方法

本文介绍了一种设计任意型（宽带、窄带、低阶、高阶、低通、高通、带通、带阻）一维FIR数字滤波器新方法．给出设计不同类型滤波器的统一方法。各种类型滤波器脉冲响应的设计公式简单、计算方便。该方法消除了Gibbs现象．不仅克服了优化设计中收敛速度、设计精度及初值选取等问题，而且减少设计高阶滤波器的时间。最后，本文给出了各种类型滤波器设计的仿真结果。     

Nd：MgO：LiNbO3晶体的荧光光谱及其双晶体腔内互倍频实验

采用激光感生荧光技术测量了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３晶体的偏振荧光光谱，简要地说明了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３双晶体腔内互倍频的基本原理，并在实验中用染料激光作泵浦源实现了其双晶体腔内互倍频运转；得到５４３ｎｍ横模倍频绿光单端输出约ＹＭＷ，腔前泵浦阈值约３８ＭＷ，总转换效率约为１．３％。     

Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.