基于三相幅度测量的相控阵天线快速校准方法

提出了一种基于三相幅度测量的相控阵天线快速校准方法。该方法将天线阵列进行分组,利用每种分组在三种配相下的阵面合成场幅度测量值,可解算出各个天线单元的初始幅相值。该方法仅需幅度测量,避免了相位测量误差影响单元幅相值的计算精度,而且所需幅度测量次数仅为(2N+1)次,可显著提高校准时效性。另外,利用分组思想,同时改变多个单元相位,使总辐射场的幅度变化显著,提升校准准确性。仿真结果表明:校准后相位均方根误差为2.2°,幅度均方根误差为0.2 dB。     

Formation of porous polymer morphology by microsyneresis during divinylbenzene polymerization

This article describes the investigation of the importance of various reaction conditions on microsyneretic pore formation during polymerization of divinylbenzene (DVB) under so‐called “solvothermal” conditions. To induce microsyneretic pore formation, the most important parameter is an unusually high dilution of monomers with a “good” porogen solvating the polymer chains. High dilution and solvation of the growing poly(DVB) chains promote the prolongation of the polymer chains rather than their interconnection by crosslinking. Consequently, when the polymer gel density reaches the point where syneresis starts, the polymer network is geometrically too extensive to be broken up into precipitating entities and, instead, porogen droplets are formed within the continuous polymer gel. The pore geometry created by microsyneresis offers high surface area in wide mesopores and hence, high capacity for supporting functional groups or reactions with much better accessibility than narrow pores between polymer microspheres produced by macrosyneresis in conventional styrenic polymer supports. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015 , 53, 774–781     

Pattern universes

In this essay we explore analogies between macroscopic patterns, which result from a sequence of phase transitions/instabilities starting from a homogeneous state, and similar phenomena in cosmology, where a sequence of phase transitions in the early universe is believed to have separated the fundamental forces from each other, and also shaped the structure and distribution of matter in the universe. We discuss three distinct aspects of this analogy: (i) Defects and topological charges in macroscopic patterns are analogous to spins and charges of quarks and leptons; (ii) Defects in generic 3+1 stripe patterns carry an energy density that accounts for phenomena that are currently attributed to dark matter; (iii) Space-time patterns of interacting nonlinear waves display behaviors reminiscent of quantum phenomena including inflation, entanglement and dark energy.     

Gravitational wave imprint of new symmetry breaking

It is believed that there are more fundamental gauge symmetries beyond those described by the Standard Model of particle physics. The scales of these new gauge symmetries are usually too high to be reachable by particle colliders. Considering that the phase transition (PT) relating to the spontaneous breaking of new gauge symmetries to the electroweak symmetry might be strongly first order, we propose considering the stochastic gravitational waves (GW) arising from this phase transition as an indirect way of detecting these new fundamental gauge symmetries. As an illustration, we explore the possibility of detecting the stochastic GW generated from the PT of \begin{document}$ {\bf{B}}-{\bf{L}}$\end{document} in the space-based interferometer detectors. Our study demonstrates that the GW energy spectrum is reachable by the LISA, Tianqin, Taiji, BBO, and DECIGO experiments only for the case where the spontaneous breaking of \begin{document}$ {\bf{B}}-{\bf{L}}$\end{document} is triggered by at least two electroweak singlet scalars.     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

平面阵列波导光栅波导模式参量的分析

用周期波导的方法分析平面阵列波导光栅(AWG)的本征方程及波导模式参数,结果表明波导传播常数是带状分布的,与波导间隔有关。分析结果对器件的优化设计有一定的指导意义。     

2.5GHz低相位噪声CMOS LC VCO的设计

用0 .35μm、一层多晶、四层金属、3.3V的标准全数字CMOS工艺设计了一个全集成的2 .5 GHz L C VCO,电路采用全差分互补负跨导结构以降低电路功耗和减少器件1/ f噪声的影响.为了减少高频噪声的影响,采用了在片L C滤波技术.可变电容采用增强型MOS可变电容,取得了2 3%的频率调节范围.采用单个16边形的对称片上螺旋电感,并在电感下加接地屏蔽层,从而减少芯片面积,优化Q值.取得了在离中心频率1MHz处- 118d Bc/ Hz的相位噪声性能.电源电压为3.3V时的功耗为4 m A.     

2.4GHz动态CMOS分频器的设计

对现阶段的主流高速CMOS分频器进行分析和比较,在此基础上设计一种采用TSPC(truesingle phase clock)和E-TSPC(extended TSPC)技术的前置双模分频器电路.该分频器大大提高了工作频率,采用0.6μm CMOS工艺参数进行仿真的结果表明,在5V电源电压下,最高频率达到3GHz,功耗仅为8mW.     

一般阵列误差情况下信号二维方向角估计

针对均匀圆阵存在一般阵列误差的情况,提出一种信号二维方向角估计方法.基于均匀圆阵的阵列流形和阵列输出的协方差矩阵,采用加权总体最小二乘法估计信号二维方向角.并给出了解整周期性模糊的方法.计算机仿真表明了此方法估计精度高,对阵列误差鲁棒性强,并且各项性能都接近于CRB.     

Defocusing image to pattern contact holes using attenuated phase shift masks

The patterning of contact holes by selecting out-of-focus image plane (defocus) using attenuated phase shift masks (APSM) has been studied. Defocus is found to enhance the image modulation at low partial coherence for contact holes with negative local average of mask function. Semi-dense holes up to 130 nm in 8% APSM have been printed by 0.5 μm defocus at a partial coherence of 0.31 using KrF scanner with highest numerical aperture of 0.68. However, these holes were closed with in-focus imaging. Defocus is also found to be beneficial for patterning the pitches that have extensive side lobes with in-focus imaging.