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991.
992.
本文简要介绍了7×35cm~2多灯丝大面积源的供电保护系统,给出了该系统的基本设计思想,电源简化原理图及主要电路特点和已达到的技术指标。 相似文献
993.
Low energy (25 kV) electron beam irradiation of MOS capacitors is shown to produce neutral hole traps in thin ‘radiation hardened’
SiO2 films. These traps are found in an uncharged state after irradiation and are populated by passing a small hole current, generated
by avalanche breakdown of then-type silicon substrate, through the oxide. From the time dependence of the observed trapping, a capture cross-section between
1 × 10∼−13 and 1 × 10−14 cm2 is deduced. The trap density is found to depend on the annealing conditions and incident electron beam dosage. The density
of traps increases with incident electron beam exposure. Once introduced into the oxide by the radiation the traps can be
removed by thermal anneals at temperatures above 500° C. Parallels between electron and hole trapping on these neutral centers
are strong evidence for an amphoteric uncharged trap generated by ionizing radiation. 相似文献
994.
995.
The coherent potential approximation (CPA) within full counting statistics (FCS) formalism is shown to be a suitable method to investigate average electric conductance, shot noise as well as higher order cumulants in disordered systems. We develop a similar FCS-CPA formalism for phonon transport through disordered systems. As a byproduct, we derive relations among coefficients of different phonon current cumulants. We apply the FCS-CPA method to investigate phonon transport properties of graphene systems in the presence of disorders. For binary disorders as well as Anderson disorders, we calculate up to the 8-th phonon transmission moments and demonstrate that the numerical results of the FCS-CPA method agree very well with that of the brute force method. The benchmark shows that the FCS-CPA method achieves 20 times more speedup ratio. Collective features of phonon current cumulants are also revealed. 相似文献
996.
《中国物理 B》2021,30(7):78102-078102
The self-catalyzed growth of Ga As nanowires(NWs) on silicon(Si) is an effective way to achieve integration between group III–V elements and Si. High-crystallinity uniform Ga As NW arrays were grown by solid-source molecular beam epitaxy(MBE). In this paper, we describe systematic experiments which indicate that the substrate treatment is crucial to the highly crystalline and uniform growth of one-dimensional nanomaterials. The influence of natural oxidation time on the crystallinity and uniformity of Ga As NW arrays was investigated and is discussed in detail. The Ga As NW crystallinity and uniformity are maximized after 20 days of natural oxidation time. This work provides a new solution for producing high-crystallinity uniform III–V nanowire arrays on wafer-scale Si substrates. The highly crystalline uniform NW arrays are expected to be useful for NW-based optical interconnects and Si platform optoelectronic devices. 相似文献
997.
High efficiency and broad bandwidth terahertz vortex beam generation based on ultra-thin transmission Pancharatnam–Berry metasurfaces
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《中国物理 B》2021,30(5):58103-058103
The terahertz(THz) vortex beam generators are designed and theoretically investigated based on single-layer ultra-thin transmission metasurfaces. Noncontinuous phase changes of metasurfaces are obtained by utilizing Pancharatnam–Berry phase elements, which possess different rotation angles and are arranged on two concentric rings centered on the origin.The circularly polarized incident THz beam could be turned into a cross-polarization transmission wave, and the orbital angular momentum(OAM) varies in value by lh. The l values change from ±1 to ±5, and the maximal cross-polarization conversion efficiency that could be achieved is 23%, which nearly reaches the theoretical limit of a single-layer structure.The frequency range of the designed vortex generator is from 1.2 THz to 1.9 THz, and the generated THz vortex beam could keep a high fidelity in the operating bandwidth. The propagation behavior of the emerged THz vortex beam is analyzed in detail. Our work offers a novel way of designing ultra-thin and single-layer vortex beam generators, which have low process complexity, high conversion efficiency and broad bandwidth. 相似文献
998.
There is always need for secure transmission of information and simultaneously compact-size photonic circuits. This can be achieved if surface plasmon-polaritons(SPPs) are used as source of information, and the reduced hacking as the transmission phenomenon. In this article, an SPP-based reduced hacking scheme is presented at interface between atomic medium and metallic conductor. The SPP propagation is manipulated with conductivity of the metal. The delay or advance of the SPP is found to create nanosecond time gap which can be used for storing and sending the information safely. The reduced hacking is further modified with conductivity of the metal and the control parameters of the atomic medium. 相似文献
999.
The energy spectra of three types of two-dimensional potentials(we will call them‘Davidson-like potentials’(DLPs)),characterized by four minima separated by barriers,are investigated.The predictions for spectra and wave functions are obtained by using the nine-point finite-difference method.For these potentials,with the existence of a single configuration,a transition of spectra,as a function of barrier height,is covered from tunneling splitting modes to fluctuations phenomena,with equal peaks wave functions,crossing to the spectra of purely anharmonic oscillator potentials(AOPs).A different type of phase transition occurs when two(or more)configurations coexist.With the change of the parameters,a transition of spectra is covered from coexistence phenomena of two distinct quantum tunneling modes to fluctuations phenomena,with unequal peaks wave functions,crossing to the spectra of purely AOPs.Using DLPs,a particular application of the coherent quadropole-octupole model to describe energy bands with alternating parity of the nuclei100Mo,146,148Nd,148,150Sm,220Ra,220,222Rn,and220,222Th is presented.The global parametrization of the model for the selected nuclei is achieved. 相似文献
1000.
We have theoretically investigated two-dimensional atom localization using the absorption spectra of birefringence beams of light in a single wavelength domain.The atom localization is controlled and modified through tunneling effect in a conductive chiral atomic medium with absorption spectra of birefringent beams.The significant localization peaks are investigated in the left and right circularly polarized beam.Single and double localized peaks are observed in different quadrants with minimum uncertainty and significant probability.The localized probability is modified by controlling birefringence and tunneling conditions.These results may be useful for the capability of optical microscopy and atom imaging. 相似文献