基于压电元件的Lamb波模式调制方法

Lamb波损伤监测技术是近年来结构健康监测研究的热点之一。由于Lamb波传播过程中存在频散及多模效应,监测过程中结构响应信号十分复杂,给信号处理和分析带来困难。根据压电元件激励与传感模型,对Lamb波模式调制及选择方法进行了分析研究,给出了基于压电元件的选择性模式激励与接收原理,实现对期望模式的激发和采集,简化响应信号及后续处理。在铝板结构上的实验研究验证了方法的有效性。     

环形脉冲变压器分布电容优化设计及实验

基于高变比脉冲变压器开展全固态调制器研究,输出电压为70kV、输出脉冲为200μs。研究了次级均匀绕制时环形结构脉冲变压器初次级间分布电容,给出了初次级间等效分布电容与静态分布电容的关系。在此基础上,从能量存储角度推导了次级非均匀绕制时初次级间等价分布电容与静态分布电容的关系表达式。基于理论分析对设计研制的脉冲变压器分布电容开展了实验研究,结果表明,采用非均匀绕制方式脉冲变压器动态分布电容减小30%,在脉冲变压器变比为1∶100时实现输出脉冲前沿2.5μs,过冲4.3%。     

级间耦合传输线脉冲变压器

级间有耦合传输线的脉冲变压器除第一级传输线外所有传输线均绕制在同一磁芯上。利用电路等效法对该变压器进行了理论分析,结果表明:相比采用其他绕线结构的传输线变压器,该传输线变压器的顶降更低,而且仅需要一块磁芯。根据该设计方法,研制了一台四级传输线脉冲变压器,变压器的输入阻抗为4.2Ω,输出阻抗为67.7Ω。利用该变压器对脉冲形成网络(PFN)形成的脉冲进行电压变换,变压器匹配负载上输出电压脉冲脉宽为120 ns,前沿为20 ns。该脉冲幅值是PFN对4.2Ω负载直接放电形成脉冲幅值的4倍,且两者波形基本一致。     

Shorting pin loaded dual-band compact rectangular microstrip antenna

Theoretical and experimental investigations carried out on shorted microstrip patch antenna for dual band operation. The investigations were carried out by varying the shorting-pin position from the edge to the centre of the patch; such an antenna provides a frequency tunability range from 0.88?GHz to 1.08?GHz for first resonance and from 2.20?GHz to 2.59?GHz for second resonance. A frequency ratio of about 2.91 to 2.2 for the two operating frequencies is observed. When the shorting-pin position is close to centre or at the centre of the patch, a single resonant frequency is observed. It is also observed that the resonant frequency of the antenna heavily depends upon the thickness of the substrate, dielectric constant of the substrate and radius of the shorting-pin.     

Design of a patch antenna with square ring-shaped-coupled ground for on-/off body communication

Bio-telemetry is an advanced area of research that enables the transmission of biomedical parameters from human body to external monitoring device. Wearable antennas showing robust performance are attaining attention for RF bio-telemetry. A square ring-shaped ground antenna with a truncated patch is investigated for dual mode, on-body and off-body communication. The proposed antenna structure is analysed and optimised on a multi-layered flat tissue phantom. Proposed design resonates at 2.6 GHz with |S11| ?22 dB and at 5.2 GHz with |S11| ?35 dB on the phantom gel. Wide bandwidth of 520 MHz (2.33–2.85 GHz) and 620 MHz (4.78–5.4 GHz) efficiently covers ISM, LTE and WLAN bands and enables the antenna to withstand frequency detuning due to different body postures. Antenna shows maximum radiation efficiency of 15% at 2.45 GHz band when placed close to the tissue. Low specific absorption rate (SAR) value of 0.459/0.523/0.303 W/Kg at 2.45/2.6/5.2 GHz ensures the tissue safety.     

Parasitic resistance current sensing topology for coupled inductors

Traditional current sensing topology based on inductor equivalent series resistance fails to extract phase currents for coupled inductors due to the presence of the magnetising inductance. This article proposes a new direct-current resistance current sensing topology for coupled inductors. By implementation of a simple resistor-capacitor network, the proposed topology can preserve the coupling effect between phases. As a result, real phase inductor currents and total current can be sensed. Detailed mathematical analysis and design equations are presented in this article. Sensitivity and mismatch issues are addressed. Experimental results show that the proposed topologies are able to extract phase current as well as total current with acceptable accuracy.     

基于块结构稀疏度的自适应图像修复算法

现有基于稀疏性的图像修复算法采用固定大小的待填充块和邻域一致性约束,且在全局搜索待填充块的最优匹配块,既降低了待修复区域的结构连贯性和纹理清晰性,又增加了算法的时间复杂度.针对上述问题,根据破损区域特性和块结构稀疏度间的关系,提出基于块结构稀疏度的自适应图像修复算法.根据最大优先权值点的块结构稀疏度值,设定不同参数以自适应选取待填充块大小、邻域一致性约束权重系数和局部搜索区域大小,并通过仿真实验分析讨论了各参数选取.实验结果表明本文算法较文献算法在峰值信噪比上提高0.3dB ～ 1.2dB,并且提高算法速度3～7倍.     

漏及衬底偏压对深亚微米工艺器件总剂量效应的影响

本文对采用0.18?m工艺制造的NMOS器件辐射总剂量效应进行了研究。对晶体管进行了不同剂量的₆₀Co辐射实验,同时测试了辐照前后晶体管电学参数随漏、衬底偏压的变化的规律。采用STI寄生晶体管模型来解释晶体管的关态漏电流及阈值电压漂移性质。3D器件仿真验证了模型的准确性。     

Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain

A comparison of the temperature dependence of the P-hit single event transient (SET) in a two-transistor (2T) inverter with that in a three-transistor (3T) inverter is carried out based on a three-dimensional numerical simulation.Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters,the temperature plays different roles in the SET production and propagation.The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases.The investigation provides a new insight into the SET mitigation under the extreme environment,where both the high temperature and the single event effects should be considered.The 3T inverter layout structure (or similar layout structures) will be a better solution for spaceborne integrated circuit design for extreme environments.     

Parasitic bipolar amplification in a single event transient and its temperature dependence

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.