LCD触控感应技术发展趋势(英文)

作为直接和界面友好的输入装置,触摸屏被广泛地应用于移动显示产品。在过去几年中,触控技术的发展也是多种多样的。文章主要介绍了传统式触控技术及内嵌式触控技术的特点,并讨论了触控技术的发展趋势。     

聚合物发光二极管面光源的光热特性

运用传输矩阵法及MATLAB软件模拟计算了以MEH-PPV为发光材料的PLED面光源出光率,分析了发光层、PEDOT层、ITO层对器件出光率的影响.模拟分析了玻璃表面半球形、圆台形、圆锥形3种微形貌对器件出光率的影响.仿真结果表明,玻璃表面为圆锥形微散射层对提高器件出光率最有利,且出光均匀性最好.最后分析了PLED面光...     

Hydrogen doping of MgO thin films prepared by pulsed laser deposition

Hydrogen doped MgO films were grown by pulsed laser deposition method. Gaseous hydrogen stored in cavities of milky MgO single crystal targets provided doping in film deposition process. Clear MgO targets without hydrogen were used in the preparation of reference films. The influence of hydrogen doping on firing voltage (FV) of gas discharge and its AC frequency dependence was investigated. According to thermoluminescence experiments, the films grown from milky targets contained two kinds of electron traps with the activation energies of 0.051 and 0.31 eV, while latter traps were absent in reference samples. The 0.31 eV trap was assigned to the hydride ion H⁻ occupying an oxygen vacancy site in MgO crystal structure. Using standard gas mixture (Ne-10% Xe), FVs of hydrogen doped sample showed considerable frequency dependence and were up to 55 V lower in comparison to the reference sample. The FVs of reference sample were shifted 14-28 V to higher values when N₂ gas was added to the mixture. The N₂ addition lowered the FVs of hydrogen doped sample up to 38 V and almost eliminated the FV frequency dependence.     

新型金属蜂窝板燃烧器的高效燃烧现象分析

新型金属蜂窝板燃烧器是通过采用双层或多层金属薄片制成,能有效地解决普通燃气灶具燃烧器存在的不足,使产品结构更加合理完善,性能更加稳定可靠,能效更加优越。本文以红外燃气灶具的核心部件—新型金属蜂窝板燃烧器为研究对象,利用红外摄像仪对红外燃气灶具和普通燃气灶具进行了对比研究。结果表明,红外燃气灶的火焰集中,温度分布均匀,燃烧效率比普通燃气灶高12.7%。     

Analysis of Compression Stress of a Filler and Bending of a Sandwich Panel under Multipoint Loading

The distribution of transverse stresses in the midlayer of a composite sandwich panel under multipoint loading is investigated. The stresses averaged across the thickness of a soft filler are estimated using a discrete model. Finite expressions for the compression of the filler along the length of the panel are derived by means of superposition of the local effects from the bending of face layers under an infinite system of transverse point forces constant across the panel thickness. The effects of compression and transverse extension of the filler, in the case of a high distribution frequency of these forces, i.e., when the distance between the forces is comparable to the panel thickness, are revealed. Compression of the panel by two systems of forces applied symmetrically or nonsymmetrically to the upper and lower faces is considered. The bending characteristics in the cases of loading with point forces and piecewise distributed loads are compared. The formulas obtained are used to determine the length of a small region on the panel surface for which the local effects from the distributed pressure and the point force are equivalent. The corresponding estimates are obtained in a closed form. The analysis, carried out with varied parameters of the structure, allows us to elucidate the peculiarities of the effect of discontinuous loads on the design characteristics in the local zones, using finite expressions derived by the operational method.     

高升力外形下机翼的位流计算

本文采用第二代低阶面元法给出了一种高升力外形外机翼位流计算方法。     

胆甾相液晶场致织构变化的偏光显微镜观测

介绍胆甾相液晶的织构和显示应用，给出胆甾相液晶几种织构的偏光显微镜图像。该图像对认识胆甾相液晶的各种织构，理解胆甾相液晶在双稳态显示器的应用原理具有一定的意义。     

真空荧光显示器应用的现状及发展

本文综述了真空荧光显示器的应用领域，给出了各类ＶＦＤ的主要技术指标和特点，也介绍了作为打印机光源和象素管的平板荧光器件；并讨论了今后的发展趋势。     

全密封超薄碳纳米管玻璃平板字符显示器件制造工艺的初步探讨

利用自制的场助热丝化学气相沉积设备，在不锈钢电极的部分选取表面上，摸索出了直接生长碳纳米管（CNT’s）勿须涂敷催化剂的新方法。利用得到的高定向多壁碳纳米管薄膜，研究出一种制造大面积实用碳纳米管阵列场发射（CNT’s／FEA）阴极的新方法。经真空条件下的发射特性测量及SEM等检测手段肯定了这种CNT’s／FEA阴极的实用性。从工艺流程角度出发，初步探讨了静态工作制式下，采用碳纳米管做电极后，实现一种全密封超薄碳纳米管玻璃真空字符（或图像）显示器件的可能性。10多只封离管共显示过3种类型的字型（图像），全部管厚仅为2．7mm。实验结果不仅提供了一种碳纳米管阴极在玻璃真空平板型器件内应用的方法，也摸索出了一条实现小尺寸双色（或多色）字符（图像）静态（或动态）显示的廉价、节能途径。     

ZrO2掺杂及其工艺参数的对AC-PDP介质保护膜结晶取向的影响

在电子束蒸发镀膜工艺条件下,掺杂含量、基板温度和蒸镀速率都会对薄膜的结晶取向产生影响.掺杂含量会影响复合膜层的晶面取向和X射线衍射峰的强度,其中ZrO2掺杂比为0.2时,能获得相对最强的(111)晶面衍射峰.而对于复合介质保护膜的制备工艺,则是较低的基板温度和较高的蒸镀速率条件下,更容易形成(111)的晶面取向;较高的基板温度和较低的蒸镀速率条件下,则更容易形成(200)或(220)的晶面取向.