完全可分的三元系TS(v,4)的支撑集

§ 1　 IntroductionA triple system of order v and indexλ,denoted by TS(v,λ) ,is a collection of3- ele-mentsubsets Aof a v- set X,so thatevery 2 - subsetof X appears in preciselyλ subsets of A.L etλ≥ 2 and (X,A) be a TS(v,λ) .If Acan be partitioned into t(≥ 2 ) parts A1,A2 ,...,Atsuch that each (X,Ai) is a TS(v,λi) for 1≤ i≤ t,then (X,A) is called de-composable.Otherwise it is indecomposable.If t=λ,λi=1for 1≤ i≤ t,the TS(v,λ) (X,A) is called completely decomposable.It …     

c轴定向氮化铝薄膜的制备

利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。     

Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.     

分散图象压缩的遗传算法

基于分形和PIFS函数的特点，提出一种改进的遗传算法用于分形压缩分块的定义域匹配搜索算法。该方法克服了原来分形图象压缩中分类匹配算法固有的局部最优性和随机搜索的缺点，是一种具导引的全局优化的搜索算法。分析和实验表明，该方法的图象压缩比高，解码质量好，若应用遗传算法的并行性，其编码速度也得到提高。     

NGN问题及其发展策略考虑

本文在分析讨论NGN的背景，目前存在的争议基础上，结合中国国情，重点对NGN框架目标进行了展望并提出了发展策略考虑。     

数字视频混合系统的设计

介绍了利用Philips的一款视频芯片SAA71 99B实现的数字视频混合系统.该系统可以将一路PAL制彩色复合视频信号编码进入另一路PAL制彩色复合视频信号中,以取代第二路视频中用户指定的颜色,从而实现了两路视频的混合.另外还介绍了如何利用单片机的I/O口模拟I 2C总线以及如何利用单片机进行彩色空间变换的算法.     

A topological aspect of Sobolev mappings

Let be a connected open set, . We give a sufficient condition for a mapping , , to have the property that sgn is almost everywhere of one sign. Following the work of Müller, Spector, and Tang [MST], we give an application of our results to the theory of non-linear elasticity. Received: 13 October 2000 / Accepted: 23 January 2001 / Published online: 4 May 2001     

Backlund transformation and variable separation solutions for the generalized Nozhnik—Novikov—Veselov equation

Using the extended homogeneous balance method, the B?cklund transformation for a (2+1)-dimensional integrable model, the generalized Nizhnik－Novikov－Veselov (GNNV) equation, is first obtained. Also, making use of the B?cklund transformation, the GNNV equation is changed into three equations: linear, bilinear and trilinear form equations. Starting from these three equations, a rather general variable separation solution of the model is constructed. The abundant localized coherent structures of the model can be induced by the entrance of two variable-separated arbitrary functions.     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².     

Defects in molecular beam epitaxial GaAs grown at low temperatures

We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.