Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

Electrocatalytic activity of sol-gel-prepared RuO2/Ti anode in chlorine and oxygen evolution reactions

Electrocatalytic properties of RuO₂/Ti anode with different coating masses, which are prepared by the alkoxide sol-gel procedure, are investigated in chlorine and oxygen evolution reactions by polarization measurements and electrochemical impedance spectroscopy in H₂SO₄ and NaCl electrolytes. According to polarization measurements, the activity of anodes at overpotentials below 100 mV is independent of coating mass. However, impedance measurements above 100 mV reveal changes in the activity of anodes in chlorine evolution reaction for different coating masses. The diffusion limitations related to the evolved chlorine are registered in low-frequency domain at 1.10 V (SCE), diminishing with the increase in potential to the 1.15 V (SCE). The observed impedance behavior is discussed with respect to the activity model for activated titanium anodes in chlorine evolution reaction involving formation of gas channels within porous coating structure. Gas channels enhance the mass transfer rate similarly to the forced convection, which also increases the activity of anode. This is more pronounced for the anode of greater coating mass due to its more compact surface structure. The more compact structure appears to be beneficial for gas channels formation. Published in Russian in Elektrokhimiya, 2006, Vol. 42, No. 10, pp. 1173–1179. The text was submitted by the authors in English.     

Auxiliary controlled singlet-oxygen ene reactions of cyclohexenes

The photooxygenation of homochiral cyclohexene ketals, which are easily available from 2-cyclohexenone and l-tartrates, affords hydroperoxides and after reduction the corresponding allylic alcohols in good yields and high regioselectivities. This can be rationalized by electronic repulsions in a perepoxide intermediate and provides evidence for unfavorable 1,3 diaxial interactions with a dioxolane oxygen atom. Only low stereoselectivities were observed, due to the flexibility of the cyclohexene ring. However, the diastereomers could be separated and after cleavage of the auxiliary, 4-hydroxy-2-cyclohexen-1-one was isolated in enantiomerically pure form, which can serve as a building block for natural product synthesis.     

Regioselectivity in the ene-reaction of singlet oxygen with cyclic alkenes: photooxygenation of methyl-substituted 1,4-cyclohexadiene derivatives

The photooxygenation of the 1-methyl-, 2,3-dimethyl-, and 1,4-dimethylcyclohexa-1,4-dienes, which are readily available through Birch reduction, yielded the corresponding ene-products. The formed endocyclic dienes were trapped by the addition of singlet oxygen to give the corresponding bicyclic endoperoxy hydroperoxides. In the case of 1-methylcyclohexa-1,4-diene and 1,4-dimethylcyclohexa-1,4,-diene, the cis-effect determined the product distribution. Photooxygenation of 2,3-dimethylcyclohexa-1,4-dienes gave mainly exocyclic olefin, which was attributed to the lowered rotational barrier of the methyl group and increased reactivity of the methyl groups.     

高压热处理对氧沉淀低温形核的影响

研究了外加高压(1GPa)下对450℃热处理硅片中氧沉淀行为的影响.透射电镜观察表明相对于大气压下热处理的样品,高压处理的样品会产生密度更高、尺寸更小的氧沉淀,表明高压有利于小直径氧沉淀的生成.电学性能测试表明,高压下处理的样品其热施主生成浓度和生成速率远远高于常压下处理的样品,这表明热施主与低温热处理过程中生成的高浓度氧沉淀核心有密切的关系.     

具有复合埋层的新型SIMON材料的制备

采用氮氧共注入方法制备了新型的 SIMON(separation by implanted oxygen and nitrogen) SOI材料 .采用不同的制备方法分别制作出样品并进行了结构测试和分析 ,发现 SIMON材料的结构和质量对注入条件和退火工艺非常敏感 .并对各种氮氧复合注入技术做了分析和比较 ,发现氮氧分次注入可以得到更好的结构和性能     

活性污泥法处理城市污水中鼓风和纯氧两种曝气方法的比较

对活性污泥法处理城市污水中鼓风曝气和纯氧（或富氧）曝气这两种方法，从曝气设备结构、特点、工艺技术指标、运行管理及经济性等方面进行了分析和比较。     

Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N₂O as oxygen dopant source. The layers were deposited on 2″ sapphire substrates from trimethylgallium and especially dried ammonia using nitrogen (N₂) as carrier gas. Prior to the growth of the films, an AIN nucleation layer with a thickness of about 300? was grown using trimethylaluminum. The films were deposited at 1085°C at a growth rate of 1.0 μm/h and showed a specular, mirrorlike surface. Not intentionally doped layers have high resistivity (>20 kW/square). The gas phase concentration of the N₂O was varied between 25 and 400 ppm with respect to the total gas volume. The doped layers were n-type with carrier concentrations in the range of 4×10¹⁶ cm⁻³ to 4×10¹⁸ cm⁻³ as measured by Hall effect. The observed carrier concentration increased with increasing N₂O concentration. Low temperature photoluminescence experiments performed on the doped layers revealed besides free A and B exciton emission an exciton bound to a shallow donor. With increasing N₂O concentration in the gas phase, the intensity of the donor bound exciton increased relative to that of the free excitons. These observations indicate that oxygen behaves as a shallow donor in GaN. This interpretation is supported by covalent radius and electronegativity arguments.     

Oxygen inhibition in thiol–acrylate photopolymerizations

The overall effects of oxygen on thiol–acrylate photopolymerizations were characterized. Specially, the choice of thiol monomer chemistry, functionality, and concentration on the extent of oxygen inhibition were considered. As thiol concentration was increased, the degree of oxygen inhibition was greatly reduced because of chain transfer from the peroxy radical to the thiol. When comparing the copolymerization of 1,6‐hexanediol diacrylate with the alkane‐based thiol (1,6‐hexane dithiol) to the copolymerization with the propionate thiol (glycol dimercaptopropionate), it was found that the propionate system was much more reactive and polymerized to a greater extent in the presence of oxygen. In addition, the functionality was considered where the glycol dimercaptopropionate was compared to a tetrafunctional propionate of similar chemistry (pentaerythritol tetrakis(mercaptopropionate)). Given the same thiol concentration, the higher functionality thiol imparted a faster polymerization rate, due to the increased polymer system viscosity, which limited oxygen diffusion and decreased the extent of overall oxygen inhibition. Thus, preliminary insight is provided into how thiol monomer choice affects the extent of oxygen inhibition in thiol–acrylate photopolymerization. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 2007–2014, 2006