Low Voltage CMOS LC VCO with Switched Self‐Biasing

This paper presents a switched self‐biasing and a tail current‐shaping technique to suppress the 1/f noise from a tail current source in differential cross‐coupled inductance‐capacitance (LC) voltage‐controlled oscillators (VCOs). The proposed LC VCO has an amplitude control characteristic due to the creation of negative feedback for the oscillation waveform amplitude. It is fabricated using a 0.13 µm CMOS process. The measured phase noise is ‐117 dBc/Hz at a 1 MHz offset from a 4.85 GHz carrier frequency, while it draws 6.5 mA from a 0.6 V supply voltage. For frequency tuning, process variation, and temperature change, the amplitude change rate of the oscillation waveform in the proposed VCO is 2.1 to 3.2 times smaller than that of an existing VCO with a fixed bias. The measured amplitude change rate of the oscillation waveform for frequency tuning from 4.55 GHz to 5.04 GHz is 131 pV/Hz.     

QoS‐Guaranteed Multiuser Scheduling in MIMO Broadcast Channels

This paper proposes a new multiuser scheduling algorithm that can simultaneously support a variety of different quality‐of‐service (QoS) user groups while satisfying fairness among users in the same QoS group in MIMO broadcast channels. Toward this goal, the proposed algorithm consists of two parts: a QoS‐aware fair (QF) scheduling within a QoS group and an antenna trade‐off scheme between different QoS groups. The proposed QF scheduling algorithm finds a user set from a certain QoS group which can satisfy the fairness among users in terms of throughput or delay. The antenna trade‐off scheme can minimize the QoS violations of a higher priority user group by trading off the number of transmit antennas allocated to different QoS groups. Numerical results demonstrate that the proposed QF scheduling method satisfies different types of fairness among users and can adjust the degree of fairness among them. The antenna trade‐off scheme combined with QF scheduling can improve the probability of QoS‐guaranteed transmission when supporting different QoS groups.     

Single FDCCII-based mixed-mode biquad filter with eight outputs

The transconductance and the transresistance modes might act as the bridge transferring from voltage-mode to current-mode and vice versa, respectively. A novel mixed-mode (including voltage, current, transconductance, and transresistance modes) biquad filter with one input and seven outputs or two inputs and eight outputs is presented. The proposed filter structure only uses a single fully differential current conveyor (FDCCII), three resistors and two grounded capacitors, which are the least components necessary for realizing voltage, current, transresistance modes all five standard filter functions and transconductance-mode band-pass, high-pass filter functions from eight output terminals. Moreover, the new mixed-mode biquad filter still enjoys (i) the employment of two grounded capacitors (attractive for absorbing shunt parasitic capacitance and ideal for IC implementation), (ii) orthogonal control of ω₀ and Q (easy for tunability), and (iii) high output impedance of three current outputs (good for cascadability). H-Spice simulation results verify the theoretical analysis.     

Magnetoconductance of polymer–fullerene bulk heterojunction solar cells

The organic magnetoconductance (MC) effects in poly(3-hexylthiophene): [6,6]-phenyl-C61-butyricacid methylester based bulk heterojunction solar cells were studied in dark and under illumination. The correlations between the MC and current character were revealed in this study. Results show that the dark current always exhibits a negative MC whereas a sign change in MC under illumination occurs at the bias around the open circuit voltage V_oc. We suggest that the positive MC in photocurrent is due to the field dependent conversion of singlet electron–hole pairs to triplet states and the negative MC is associated with space charge limited current with traps. Other possible mechanisms about the magnetoconductance effects are also discussed.     

极点与H_∞指标约束下的满意容错控制

研究了线性不确定系统区域极点与H∞指标约束下的动态输出反馈容错控制器的设计问题.基于连续型执行器故障模式,利用有界实引理和线性矩阵不等式,给出了区域极点指标与H∞指标约束相容性理论及条件,并且分析了区域极点指标相容的H∞指标的取值范围.最后给出了同时满足区域极点与H∞指标约束下的动态输出反馈控制器的设计方法和步骤.仿真示例验证了提出方法的有效性.     

轴向盖板型铝电解电容器的可靠性探讨

介绍了一种直卧两用的铝电解电容器,其特征是焊片盖板结构,轴向双向引出,容易散热,能够承受较大的电流冲击,稳定性好,可以提高铝电解电容器产品的可靠性。     

Liquid–Liquid Transition and Detrapping of Trapped Carriers of P(MMA/BA) Copolymers by Thermally Stimulated Depolarization Current

Poly (methyl methacrylate/butyl acrylate) [P(MMA/BA)] copolymers (M _η～2×10⁵) with different mass percentages of PMMA (100/0, 90/10, 81/19, and 75/25), were synthesized by the method of solution polymerization. In addition to the normal α and ρ peak, a third τ peak is observed in thermally stimulated depolarization current (TSDC) spectra of the copolymers in the high temperature region. The α peak‐corresponds to the glass transition, the ρ peak originates from the detrapping of trapped carriers in the bulk amorphous structure related with flexible side groups, and the τ peak can be attributed to the charge detrapping related to the liquid–liquid transition of the copolymers. The three peaks all move to lower temperature with an increase of the BA component, indicating that the flexible side groups of butyl acrylate not only have an effect of plasticization on the glass transition and liquid–liquid transition, but also make the trap depth shallower and the detrapping process easier for the ρ and τ peaks. The experimental results confirm that TSDC analysis is very sensitive for investigating the liquid–liquid transition of polymers. The liquid–liquid transition temperature (T _LL) of the copolymers follows a type of the Fox equation. Fitting the results gives a T _LL of 102°C for polybutyl acrylate.     

异质多晶SiGe栅应变Si NMOSFET物理模型研究

结合了“栅极工程”和“应变工程”二者的优点, 异质多晶SiGe栅应变Si MOSFET, 通过沿沟道方向使用不同功函数的多晶SiGe材料, 在应变的基础上进一步提高了MOSFET的性能. 本文结合其结构模型, 以应变Si NMOSFET为例, 建立了强反型时的准二维表面势模型, 并进一步获得了其阈值电压模型以及沟道电流的物理模型. 应用MATLAB对该器件模型进行了分析, 讨论了异质多晶SiGe栅功函数及栅长度、衬底SiGe中Ge组分等参数对器件阈值电压、沟道电流的影响, 获得了最优化的异质栅结构. 模型所得结果与仿真结果及相关文献给出的结论一致, 证明了该模型的正确性. 该研究为异质多晶SiGe栅应变Si MOSFET的设计制造提供了有价值的参考. 关键词： 异质多晶SiGe栅 应变Si NMOSFET 表面势 沟道电流     

表面状态对强流脉冲电子束辐照诱发金属表面熔坑的影响

 为了考察材料晶体学特性对表面熔坑形成机制的影响,利用强流脉冲电子束（HCPEB）对喷丸前、后的304奥氏体不锈钢进行表面辐照处理,对HCPEB诱发的表面熔坑形貌进行了详细的表征。实验结果表明,HCPEB辐照后样品表面形成了大量的火山状熔坑,熔坑数密度和熔坑尺寸随电子束能量的增加而减小,材料表面的杂质或夹杂物容易成为熔坑的核心,并在熔坑形成的喷发过程中被清除,起到净化表面的作用。此外,喷丸前、后样品表面熔坑数密度遵循相似的分布规律,喷丸处理使熔坑数密度显著增大,表明材料的晶体学特性对表面熔坑形成有重要的影响,晶界、位错等结构缺陷是熔坑形核的择优位置。     

荧光染料掺杂的高效率、高亮度白色有机电致发光器件

制备了结构为 ITO/NPB（30 nm）/Rubrene（0.2 nm）/CBP：Bczvbi（8 nm,x%）/Bphen（30 nm）/Cs₂CO₃：Ag₂O（2 nm,20%）/Al（100 nm）的器件。研究了Bczvbi掺杂浓度（x=5,10,15）对白光器件性能的影响。综合利用发光层中主客体之间的能量转移和空穴阻挡层的空穴阻挡特性,得到了高效率、高亮度的白色有机电致发光器件。当Bczvbi的掺杂质量分数为10%时,器件的效率和亮度都为最大。驱动电压为7 V时,最大电流效率为4.61 cd/A;驱动电压为9 V时,最大亮度为21 240 cd/m²。当驱动电压从4 V增加到9 V时,色坐标从（0.36,0.38）变化为（0.27,0.29）,均处于白光区域。