Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier

A two-electrode multi-quantum-well semiconductor optical amplifier is designed and fabricated.The amplified spontaneous emission(ASE)spectrum and gain were measured and analyzed.It is shown that the ASE spectrum and gain characteristic are greatly influenced by the distribution of the injection current density.By changing the injection current density of two electrodes,the full width at half maximum,peak wavelength,peak power of the ASE spectrum and the gain characteristic can be easily controlled.     

Accurate surface potential determination in Schottky diodes by use of correlated current and capacitance voltage measurements. Application to n–InP

Based on current voltage (I-V_g) and capacitance voltage (C-V_g) measurements, a reliable procedure is proposed to determine the effective surface potential V_d.V_g/ in Schottky diodes. In the framework of thermionic emission, our analysis includes both the effect of the series resistance and the ideality factor, even voltage dependent. This technique is applied to n-type indium phosphide (n-InP) Schottky diodes with and without an interfacial layer and allows us to provide an interpretation of the observed peak on the C-V_g measurements. The study clearly shows that the depletion width and the flat band barrier height deduced from C-V_g, which are important parameters directly related to the surface potential in the semiconductor, should be estimated within our approach to obtain more reliable information.     

采用balun低噪声放大器的5GHz 7.2-dB NF低功耗直接转换接收机前端电路

A 5GHz low power direct conversion receiver radio frequency front-end with balun LNA is presented. A hybrid common gate and common source structure balun LNA is adopted, and the capacitive cross-coupling technique is used to reduce the noise contribution of the common source transistor. To obtain low 1/f noise and high linearity, a current mode passive mixer is preferred and realized. A current mode switching scheme can switch between high and low gain modes, and meanwhile it can not only perform good linearity but save power consumption at low gain mode. The front-end chip is manufactured on a 0.13-μm CMOS process and occupies an active chip area of 1.2 mm². It achieves 35 dB conversion gain across 4.9-5.1 GHz, a noise figure of 7.2 dB and an IIP3 of -16.8 dBm, while consuming 28.4 mA from a 1.2 V power supply at high gain mode. Its conversion gain is 13 dB with an IIP3 of 5.2 dBm and consumes 21.5 mA at low gain mode.     

一种具有衬底n型电荷区的高压LIGBT

本文基于4μm漂移区厚度提出一种具有衬底浮空n型电荷区的新型LIGBT（NR-LIGBT）。由于n型电荷区的电场调制作用,器件的纵向击穿特性得到加强,击穿电压得到明显的提高。由于高的单位微米平均电场,因此新器件具有面积成本低、电流能力强和关断时间短的特点。模拟结果表明：在相同的100μm漂移区长度下,新结构的击穿电压比常规结构（C-LIGBT）提高了58％。并且,在相同的阻断能力下,新结构的关断时间短于常规器件。     

插入n-AlGaN/GaN超晶格改善GaN基LED的droop效应

在GaN基LED的n-GaN和InGaN/GaN发光区之间插入n-AlGaN/GaN超晶格来改善其droop效应。注入电流低于100mA时,插入n-AlGaN/GaN超晶格的LED的流明效率低于没有插入层的LED。注入电流高于100mA时,插入n-AlGaN/GaN超晶格的LED的流明效率高于没有插入层的LED。插入n-AlGaN/GaN超晶格后,GaN基LED在-5V的反向电压下,漏电由2.568029μA减少到0.070543μA。人体模式下,插入n-AlGaN/GaN超晶格的LED在2000V的静电电压下的通过率从60%提高到了90%。LED droop效应的改善是因为n-AlGaN/GaN超晶格过滤了穿透位错并改善了电流扩展能力。     

LT3599的LCD LED背光驱动控制电路的设计

介绍了一种液晶显示器的LED背光驱动控制设计方案,对电路的整体控制、各项功能的实现、各性能参数的详细计算方法以及电路的具体设计等一一进行了阐述,并给出了相关的控制框图和时序图,配合灵活的FPGA的软件编程以及恰当的LED灯组布局,可以实现良好的LED背光驱动控制。     

单端反激式LED开关电源变压器的设计

随着LED照明向普通照明领域进军,作为LED电源重要组成部分的高频电压器,体积小、功耗低、电磁辐射小、工作频率高,成为其主要的性能指标。针对此目的,对LED开关电源反激变压器的设计进行研究,结合实际采用面积乘积法设计一款单端反激式高频变压器,运用变压器电感电流断续的工作模式使得变压器的体积大大减小,同时在很大程度上也减小了变压器的电磁干扰辐射。通过3 W LED电源的制作测试实验对设计方案进行验证,结果证明了设计方案的可行性,达到了预期的效果。     

基于双电流环控制的并网逆变器设计

LCL滤波器可以有效抑制高次谐波,然而LCL滤波器的使用增加了系统阶数,对系统控制策略提出了更高的要求。为此,采用一种基于极点配置的电流双环控制策略,以DSP作为主控制器,充分利用DSP控制器的CLA、高精度PWM和AD等模块,使其硬件电路大大简化。最后,通过极点配置的方法选定控制参数,整个系统操作简单、控制灵活、功能强大,实现了节能降耗和精密制动。     

基于C8051f350单片机的铅酸蓄电池智能检测仪研制

采用恒流放电的方法,智能检测铅酸蓄电池容量和内阻。在该方法的基础上设计了一款铅酸蓄电池智能检测仪,该检测仪以C8051f350单片机作为主控芯片,采用了PID算法、片内高精度信号转换电路和新型集成驱动电路,可根据实际情况适时调整放电电流。详细叙述了检测仪的检测原理、电路设计和软件设计,并提出了设计时的关键技术问题。该检测仪具有使用方便、可靠性高、检测精度高等优点。     

有机薄膜器件电流机制的研究

对于有机薄膜器件(包括有机电致发光器件(OLED)和有机场效应晶体管(OTFT)),器件的电流机制直接决定了器件的性能,因此深刻理解其相关机理是十分必要的.虽然对于有机薄膜器件的电学性能研究较早,但是由于器件结构及有机薄膜内部影响机制的复杂性使得不同学者的研究结果很不一致.为此,文章以相同的镁银合金(MgAg)为电极,...