A 5-GHz LC VCO with digital AAC and AFBS for 2.4 GHz ZigBee transceiver applications

A 5 GHz LC VCO (voltage-controlled oscillator) with automatic amplitude control (AAC) and automatic frequency-band selection (AFBS) for 2.4 GHz ZigBee transceivers is presented. Instead of continuous feedback loop, an alternative amplitude calibration scheme is proposed in this paper to alleviate the deficiencies inherent in the conventional approach. It helps to keep the VCO at optimum amplitude to avoid saturation of the cross-coupled transistors and therefore stabilizes the phase noise performance over process, voltage and temperature variations. For the ZigBee application with 16 frequency channels, a coarse tuning loop is added in this work to implement the frequency-band selection using the AFBS mechanism. The VCO core and the digital AAC, AFBS modules have been fully integrated in a 2.4 GHz ZigBee transceiver which was fabricated in a 0.18 μm RF-CMOS technology. The current consumption is 4.7 mA at 4.85 GHz with 1.8 V power supply and a chip area of about 0.285 mm² is occupied. The VCO is capable of operating from 4.67 GHz to 5.18 GHz and the measured phase-noise level is –120 dBc/Hz at 1 MHz offset from a 4.85 GHz carrier. The tuning sensitivity K_VCO of the VCO is about 78 MHz/V with 0.9 V control voltage.     

High‐Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self‐Assembled Monolayer Doping

Most doping research into transition metal dichalcogenides (TMDs) has been mainly focused on the improvement of electronic device performance. Here, the effect of self‐assembled monolayer (SAM)‐based doping on the performance of WSe₂‐ and MoS₂‐based transistors and photodetectors is investigated. The achieved doping concentrations are ≈1.4 × 10¹¹ for octadecyltrichlorosilane (OTS) p‐doping and ≈10¹¹ for aminopropyltriethoxysilane (APTES) n‐doping (nondegenerate). Using this SAM doping technique, the field‐effect mobility is increased from 32.58 to 168.9 cm² V^?1 s in OTS/WSe₂ transistors and from 28.75 to 142.2 cm² V^?1 s in APTES/MoS₂ transistors. For the photodetectors, the responsivity is improved by a factor of ≈28.2 (from 517.2 to 1.45 × 10⁴ A W^?1) in the OTS/WSe₂ devices and by a factor of ≈26.4 (from 219 to 5.75 × 10³ A W^?1) in the APTES/MoS₂ devices. The enhanced photoresponsivity values are much higher than that of the previously reported TMD photodetectors. The detectivity enhancement is ≈26.6‐fold in the OTS/WSe₂ devices and ≈24.5‐fold in the APTES/MoS₂ devices and is caused by the increased photocurrent and maintained dark current after doping. The optoelectronic performance is also investigated with different optical powers and the air‐exposure times. This doping study performed on TMD devices will play a significant role for optimizing the performance of future TMD‐based electronic/optoelectronic applications.     

基于载波相移系统的二倍频光电振荡器

为了扩展光电振荡器(OEO)的频率范围,设计了 一种基于载波相移系统的二倍频OEO(FD-OEO)。 系统采用相位调制器(PM)和Mach-Zehnder调制器(MZM)并联,构成载波相移系统,利用载 波相移双边带(CPS-DSB) 调制的方法产生二次谐波分量;同时利用啁啾光纤布拉格光栅(CFBG)色散特性实现边带分 量与CPS补偿,维持 OEO环路中基频信号的振荡。实验结果显示,在OEO环路系统基频信号为2.23GHz情况下,产生了4.30 GHz的FD信号,且通过边模抑制性能、稳定性及相位噪声对系统性能进行了验证。     

Generalized Fourth-Order Decompositions of Imaginary Time Path Integral: Implications of the Harmonic Oscillator

The imaginary time path integral formalism offers a powerful numerical tool for simulating thermodynamic properties of realistic systems. We show that, when second-order and fourth-order decompositions are employed, they share a remarkable unified analytic form for the partition function of the harmonic oscillator. We are then able to obtain the expression of the thermodynamic property and the leading error terms as well. In order to obtain reasonably optimal values of the free parameters in the generalized symmetric fourth-order decomposition scheme, we eliminate the leading error terms to achieve the accuracy of desired order for the thermodynamic property of the harmonic system. Such a strategy leads to an efficient fourth-order decomposition that produces third-order accurate thermodynamic properties for general systems.     

Rapid Capillary-Assisted Solution Printing of Perovskite Nanowire Arrays Enables Scalable Production of Photodetectors

Despite recent progress in producing perovskite nanowires (NWs) for optoelectronics, it remains challenging to solution-print an array of NWs with precisely controlled position and orientation. Herein, we report a robust capillary-assisted solution printing (CASP) strategy to rapidly access aligned and highly crystalline perovskite NW arrays. The key to the CASP approach lies in the integration of capillary-directed assembly through periodic nanochannels and solution printing through the programmably moving substrate to rapidly guide the deposition of perovskite NWs. The growth kinetics of perovskite NWs was closely examined by in situ optical microscopy. Intriguingly, the as-printed perovskite NWs array exhibit excellent optical and optoelectronic properties and can be conveniently implemented for the scalable fabrication of photodetectors.     

2.1305GHz高频反台温补晶体振荡器的研制

介绍了一种应用离子束刻蚀技术制作的三次泛音355MHz高频反台晶体谐振器,制作2．1305GHz温补晶体振荡器（TCXO）的方法。经测试,该温补晶体振荡器性能优良,且体积和功耗都较小,适用于导弹、无人机、卫星等飞行器。     

LD端面泵浦的1.57μm内腔式OPO

1.57 μm波长激光为人眼安全波长激光。将KTP晶体置于一个由LD端面泵浦、声光调Q的Nd:YVO4晶体双凹谐振腔内,利用KTP表面镀膜建立了内腔式OPO,实现了重复率在5～40 kHz范围内1.57 μm脉冲激光的稳定输出。实验结果表明,激光的阈值将随声光调Q器重复率的增加而升高,重复率为5 kHz时得到最低阈值1.52 W。重复率为15 kHz、泵浦功率为3.7 W时,输出光平均功率为305 mW,脉冲宽度50 ns,峰值功率400 W。     

啁啾镜与棱镜对混合色散补偿产生8 fs光脉冲

利用宽带啁啾镜（CM）与熔石英棱镜对结合优化色散补偿,从掺Ti蓝宝石振荡器中获得具有带宽大于100nm、光谱结构光滑的亚4个光学周期脉冲。该激光器输出脉冲的中心波长在780nm处,最短脉冲宽度为8fs,最宽的光谱半宽度为180nm。在3．5W泵浦下,输出功率为280mW。更重要的是该激光器能够稳定地运转在“马鞍型”的光谱状态,这对于作为啁啾脉冲放大器种子激光源,克服放大过程的“增益窄化”效应有实际意义。     

光生毫米波技术

在概述光生毫米波基本原理的基础上,介绍了产生毫米波的强度调制技术、光注入锁定技术、光外差技术及光电振荡器等四种方案的基本原理。通过对几种典型实验装置的分析,比较了这四种实验方案的优缺点及其发展方向。     

紧凑型人眼安全OPO激光器

提出了OPO与泵浦源激光器共用一个谐振腔的新型结构,保证了OPO谐振腔和基波谐振腔的腔模最佳匹配,OPO光束质量得到了很大提高。泵浦源激光器,采用布氏角切割的Cr∶YAG晶体作为被动Q开关,定向棱镜作为谐振腔全反镜,使得整个OPO激光器具有结构紧凑、抗失调能力强的特点。1. 57μm激光的输出能量8mJ、发散角5. 5mrad、重复频率1 /6Hz。