Control of self‐organized low‐dimensional morphology in poly(styrene‐b‐4vinylpyridine)/polystyrene blend thin films

The surface morphologies of poly(styrene‐b‐4vinylpyridine) (PS‐b‐P4VP) diblock copolymer and homopolystyrene (hPS) binary blend thin films were investigated by atomic force microscopy as a function of total volume fraction of PS (?_PS) in the mixture. It was found that when hPS was added into symmetric PS‐b‐P4VP diblock copolymers, the surface morphology of this diblock copolymer was changed to a certain degree. With ?_PS increasing at first, hPS was solubilized into the corresponding domains of block copolymer and formed cylinders. Moreover, the more solubilized the hPS, the more cylinders exist. However, when the limit was reached, excessive hPS tended to separate from the domains independently instead of solubilizing into the corresponding domains any longer, that is, a macrophase separation occurred. A model describing transitions of these morphologies with an increase in ?_PS is proposed. The effect of composition on the phase morphology of blend films when graphite is used as a substrate is also investigated. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 3496–3504, 2004     

Rheooptical investigation of the crystallization of poly(ethylene terephthalate) under tensile strain

The crystallization of poly(ethylene terephthalate) under uniaxial tensile strain at different extension rates was investigated with optical polarimetry in a temperature range between the glass-transition temperature and the quiescent crystallization temperature. The evolution of the optical properties of the polymer, including the turbidity, birefringence, and dichroism, were monitored simultaneously with the mechanical parameters. To complete the semicrystalline microstructure characterization of the polymer under strain, an online wide-angle X-ray diffraction (WAXD) technique was used in separate experiments, which were performed under the same thermomechanical conditions. For real-time measurements, a high-energy synchrotron radiation source was used. The optical properties provided information about both the crystalline and amorphous phases, whereas the WAXD patterns essentially gave information about the crystalline phase. The two experimental techniques were then used in a complementary way to characterize the semicrystalline microstructure. Significant deviations from the stress-optical rule were found. This was attributed to both transient effects and the appearance of crystallites, which consisted of highly oriented molecular segments that could contribute to the optical anisotropy but not necessarily to the stress. The behavior of the optical dichroism was found to be qualitatively different from that of the birefringence. The latter monotonically increased with the strain, whereas the former first increased with the strain, passed through a maximum, and then decreased to a steady-state value. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 1915–1927, 2004     

对撞增强型YAG相位共轭腔

降低SBS相位共轭腔的启动阈值以及如何提高输出光束的质量一直是人们关心的课题。报道了在YAG激光器上运行一种新型对撞增强型YAG受激布里渊散射相位共轭激光腔的输出特性。该腔具有较低的启动阈值和较高的输出能量;该腔型最高能输出150mJ的能量,输出脉宽最窄为11ns,光束发散角为1.3mrad,输出能量和光束质量都很优良。     

密封容器中后处理制备Tl2Ba2CaCu2Oy高温超导薄膜及其性能研究

以铝酸镧（001）单晶为基片，采用两步法制备Tl2Ba2CaCu2Oy（Tl 2212）高 温超导薄膜.首先，利用脉冲激光沉积（PLD）工艺沉积Ba2CaCu2Ox非晶前驱体薄膜；然后，前驱体薄膜在高温（720—850℃）下密封钢容器里铊化结晶形成Tl 2212薄膜.XRD结果表明Tl2212 薄膜是沿c轴方向生长的，其相组成为Tl 2212，摇摆曲线（0012）的半高宽为0.72° ，SEM图像显示其表面光滑平整，其零电阻温度为106.2K. 关键词： Tl 2212超导薄膜 脉冲激光沉积     

电子束蒸发制备HfO_2高k薄膜的结构特性

使用高真空电子束蒸发在p型Si(1 0 0 )衬底上制备了高kHfO2 薄膜 .俄歇电子能谱证实薄膜组分符合化学配比 ;x射线衍射测量表明刚沉积的薄膜是近非晶的 ,高温退火后发生部分晶化 ;原子力显微镜和扫描电子显微镜检测显示在高温退火前后薄膜均具有相当平整的表面 ,表明薄膜具有优良的热稳定性 ;椭偏测得在 6 0 0nm处薄膜折射率为 2 0 9;电容 电压测试得到的薄膜介电常数为 1 9.这些特性表明高真空电子束蒸发是一种很有希望的制备作为栅介质的HfO2 薄膜的方法     

离子束增强沉积VO2多晶薄膜的温度系数

用改进的离子束增强沉积方法和恰当的退火从V2O5粉末直接制备了VO2多晶薄膜.实验测试表明，薄膜的取向单一、相变特性显著、结构致密、界面结合牢固、工艺性能良好，薄膜的电阻温度系数（TCR）最高可达4.23%/K.从成膜机理出发，较详细地讨论了离子束增强沉积 VO2多晶薄膜的TCR高于VOx薄膜的TCR的原因.分析认为，单一取向的VO2结构使薄膜晶粒具有较高的电导激活能，致密的薄膜结构减少了氧空位和晶界宽度，使离子束增强沉积 VO2多晶薄膜结构比其他方法制备的VOx薄膜更接近于单晶VO2是其具有高TCR的原 关键词： VO2多晶薄膜 离子束增强沉积 热电阻温度系数     

晶格失配对异质外延超薄膜生长中成核特性的影响

利用动力学蒙特卡罗方法模拟了异质外延超薄膜生长中的成核过程.研究了薄膜与衬底的晶格失配对超薄膜生长中成核密度、平均核尺寸、标度关系及生长模式的影响.结果发现产生压（张）应变的晶格负（正）失配使生长过程更早（迟）从成核区进入过渡区，失配越大，这一效应越明显.在相同的沉积条件下，负失配导致超薄膜形成较低的成核密度与较大的平均核尺寸，而正失配则相反.成核密度满足标度关系Ns≈(F/D)χ，随着失配度从-0.04增加到0.02，标度系数χ从0.37逐渐减小到0.33，对应超薄膜生长过程从包含二聚体扩散模式转变到无 关键词： 薄膜生长 成核 晶格失配 蒙特卡罗模拟     

磁性Salisbury屏的高频响应

研究了利用磁性薄膜构造Salisbury屏的可能性及其在微波频段的反射率频率特性.结果表明，利用铁磁性材料在铁磁共振频率附近磁化率具有χ″>χ′的特性，可以构造出对电磁波有良好吸收性能的磁性Salisbury屏.通过对铁磁材料高频磁谱物理机理的分析后指出，具有弛豫型共振磁谱的铁磁材料可以构造出薄膜型Salisbury屏，其厚度为微米甚至亚微米量级.反射率的频率特性与磁性材料的特征阻抗z-r有关，它取决于铁磁共振频率和静态磁化率.反射率的频率响应显示磁性薄膜Salisbury屏具有较宽的吸收带宽. 关键词： 磁性Salisbury屏 反射率 频带响应 磁性薄膜     

Ceramic Films via Organometallic Complex as Single Source Precursor

Fe2(CO)6(μ-S2) was used as a single source precursor in attempt to produce FeS film via MOCVD. Pyrolysis of Fe2(CO)6(μ-S2) at temperature below 500℃ produced Fe1-xS or Fe7S8 powder as indicated by its powder X-ray spectra. At 750 ℃, polycrystalline FeS powder was obtained. In film deposition, polycrystalline Fe1-xS or Fe7Ss films were obtained on Si(100) and Ag/Si(100) substrates below 500 ℃. SEM micrographs showed the film on Si(100) substrate containing whisker like grains. However, pillar like grains were obtained on Ag/Si(100) substrate.Deposition rates are also different for different substrates as evaluated by the thickness of the films, which were obtained by SEM micrographs of the cross section of the films. At 750℃, similar polycrystalline Fe1-xS or Fe7S8 film was obtained.     

用楔形柱面光纤微透镜耦合的1.3μm SOA组件

运用激光模式耦合理论分析了半导体光放大器(SOA)与单模通信光纤的连接损耗,并设计制作了楔形柱面光纤微透镜用来实现两者的模斑匹配,有效地降低了器件的光耦合损耗.本文介绍了楔形柱面光纤微透镜耦合的1.3 μm半导体光放大器(SOA)组件及其制作方法.该组件的最大增益不小于14 dB,其偏振灵敏度小于1 dB,增益波动不大于0.5 dB.