Wavelength dependence in photochemical vapor deposition of aluminum film using dimethylaluminum hydride

In photochemical vapor deposition of aluminum film on silicon using dimethylaluminum hydride, (CH₃)₂AlH, a surface reaction dominated below a (CH₃)₂AlH pressure of 0.3 m Torr at 200°C, which was induced only with the 160 nm band emitted from a deuterium lamp. A gas-phase reaction occurred above 0.3 mTorr at 200°C, which could be induced by both 160 nm and 240 nm emission bands from the lamp. To distinguish between surface ad gas-phase reactions, a thickness profile was used. At 240°C the surface reaction could be induced even by the 240 nm band, while the deposits formed under illumination of the two bands were thinner than those obtained with only the 240 nm band, indicating occurrence of vacuum ultraviolet (VUV)-enhanced desorption. The mechanism responsible for the observed wavelength dependence in unclear. The electrical resistivity of the films deposited at 200°C was 4.5 μΩ cm, which did not change with wavelength.     

Characteristic of a broadband Ti:LiNbO3 optical modulator with buried electrodes and etched grooves in the buffer layer

Traveling wave Ti:LiNbO₃ Mach-Zehnder optical modulators with buried electrodes and etched grooves in the SiO₂ buffer layer are analyzed by the finite element method. The tradeoff between the bandwidth BW and the half-wave voltage Vπ is discussed. The value of BW/Vπ is used to weight the total performance of the modulator. Taking a thick buffer layer and etching deep grooves in the buffer layer are demonstrated as two effective methods to improve the performance of the modulator. A 3-dB optical bandwidth of 18 GHz with half-wave voltage 5V at a wavelength of 1.55 pm could be obtained even though the electrode is not very thick. When the requirement of half-wave voltage is not very critical, a bandwidth of more than 100 GHz can be obtained.     

PZT铁电薄膜的制备及电学性能研究

使用硝酸锆作锆源的溶胶－凝胶方法制备ＰＺＴ铁电薄膜。他们的电学性能被测试包括电滞回线，电流Ｉ（ｔ）特性，漏电流，矫顽场疲劳和老化。测到的ＰＺＴ薄膜剩余极化８．２μＣ／ｃｍ~２，矫顽场６８ｋＶ／ｃｍ．簿膜的寿命可超过１０~（１１）周期。     

Non-linearity of the interactions between bottom-up and top-down signals in multistable visual perception

Summary Both bottom-up sensory information and top-down influences contribute to the perception processes. We studied the perceptual alternations of a multistable ambiguous pattern. We observed that it is possible to interfere on the process of the perception alternance by means of subliminal visual stimuli, which either contrast or second the previous perception. We investigated also the effect of the top-down volitional factor on the perceptual alternation. By using a combination of such top-down factor and bottom-up stimulation, we ascertained that a non-linear type of interaction occurs between the two above factors. Paper presented at the International Workshop ?Fluctuations in Physics and Biology: Stochastic Resonance, Signal Processing and Related Phenomena?, Elba, 5–10 June 1994.     

薄膜微型电源

介绍了新型的薄膜微型电源的工作原理、结构及制造工艺。     

光学薄膜在现代汽车工业中的应用

本文论述应用光学薄膜技术对汽车窗口玻璃和塑料的若干性能进行改进的技术发展水平，这些性能包括塑料表面的硬化，红外区的反射，紫外区的吸收，偏振化作用，双折射，憎水性以及光学角度选择性等，评论等离子体处理和物理蒸汽淀积薄膜工艺近来应用的一些例子。对于物理蒸汽淀积薄膜所提供的异常功能连同实际使用中它们的耐久性作了特殊的强调。     

混沌光学系统的前向神经网络系统辨识研究

为解决混沌光学系统自适应控制所需之控制参考动力学模型问题，以布拉格声光混沌系统的系统辨识为例．研究了利用前向神经网络对混沌光学系统进行系统辩识的可行性。计算机仿真实验发现．在静态ＢＰ算法支持下一结构十分简单的三层ＢＰ前向神经网络（１：４：１）即可在一定的精度范围内完成对布拉格声光混沌系统的系统辨识．此结果表明．三层前向ＢＰ神经网络在静态ＢＰ算法的支持下确是一良好的混沌光学系统辨识器，因而可用来处理混沌光学时间序列以进行混沌光学系统的动力学重构。     

非晶硅基薄膜的等离子体刻蚀光发射谱检测

本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。     

薄膜磁头磁轭制备工艺研究

本文重点讨论了用不同的工艺方法来制备薄膜磁头中的关键元件-磁轭。采用多次光刻的方法克服湿法工艺中磁性膜NiFe层的侧向钻蚀问题，从而实现对磁轭几何尺寸的精确控制，并对几种工艺方法的优缺点作了比较详细的分析。     

用于多种组装技术的厚膜导体复合结构

厚膜导体Ｐｄ－Ａｇ／Ａｕ、Ｐｔ－Ｐｄ－Ａｕ／Ａｕ平面复合结构，Ｐｄ－Ａｇ／Ａｕ立体复合结构可使多种组装技术相互兼容。立体复合结构还可有效地降低导体线电阻，减少线损耗。而且，其超声键合性尤佳