YAG激光器泵浦钛宝石激光器和光学参量振荡器

采用一台调Q脉冲式Nd：YAG激光器同时泵浦Ti：蓝宝石激光器和光学参量振荡器（OPO），在重复频率30Hz下获得了Ti：蓝宝石可调谐激光波长为700～890nm，转换效率28．8％及440～2600nm的连续可调谐窄线宽的光参量激光输出，能量转换效率达23％。     

色散缓变光纤中Raman孤子自频移效应的研究

利用绝热扰动法研究了色散缓变光纤中Ｒａｍａｎ孤子自频移效应，得到了色散缓变光纤中Ｒａｍａｎ孤子自频移的表达式。结果表明：光纤色散变化率存在一个可以有效抑制孤子自频移的阈值，当光纤色散变化率大于这个阈值时，色散缓变光纤可以抑制孤子自频移，而当光纤色散变化率小于这个阈值时，色散缓变光纤不仅不能抑制孤子自频移，反而加剧孤子自频移。     

分布式光纤温度传感中喇曼散射的理论研究

光纤中喇曼散射理论的研究是分布式光纤温度传感重要的理论基础。文中首先介绍了喇曼散射，然后对传感光纤中的喇曼散射进行了全面的理论分析，这些分析为分布式光纤温度传感器的设计提供了有益参考。     

Analysis of the infrared transmission data of hydrogenated amorphous silicon film fabricated by high rate PECVD

The optical properties of hydrogenated amorphous silicon thin films prepared by a new thermocatalytic plasma enhanced chemical vapor deposition (PECVD) method are here reported for the first time. The transmission spectrum of the film, deposited at a rate of 1.5 nm/s, was measured between 500 and 1100 nm. The envelopes of the transmission spectrum interference maxima and minima were analyzed to reveal the absorption coefficient α(λ@#@), the refractive indexn(λ), the average thickness of the film (791 nm) and the variation of the thickness (11.4 nm), using an analysis which takes into account film inhomogeneity. The modified Newton's method of numerical analysis was used to obtain the optical parameters. The optical band gap ε₀} was determined to be 1.69 eV from the absorption coefficient spectrum, commensurate with values quoted for lower deposition rate PECVD films. The value for ε₀}, the small variation of the film thickness, and a value for the defect density of 3.7 x 10¹⁵}cm^-3} determined for similar material in other work indicate that the thermocatalytic PECVD method can produce acceptable quality films at a high deposition rate.     

Complete Solution of Sun Tracking for Heliostat

A general solution of sun tracking for an arbitrarily oriented heliostat towards an arbitrarily located target on the earth is published. With the most general form of solar tracking formulae, it is seen that the used azimuth-elevation, spinning-elevation tracking formulae etc. are the special cases of it. The possibilities of utilizing the general solution and its significance in solar energy engineering are discussed.     

Ru、Rh、Pd掺杂GaSb的电子结构和光学性质

运用第一性原理计算方法研究了过渡族金属TM(TM=Ru、Rh、Pd)掺杂GaSb的电子结构和光学性质,结果表明:TM掺杂GaSb主要以TM替代Ga(TM @Ga)缺陷存在,并可增强GaSb半导体材料对红外光区光子的响应,使体系光学吸收谱的吸收边红移;TM@Ga所引入的杂质能级分布于零点费米能级附近,这极大地增强了体系的介电性能,促进了电子-空穴对的产生和迁移,因而提升了掺杂体系的光电转换效率;Ru 掺杂对GaSb光学性质的改善最为明显,当掺杂浓度为6.25%(原子数分数)且均匀掺杂时,Ru掺杂GaSb体系对红外光区光子的吸收幅度最大,有效提升了GaSb光电转换效率和光催化活性。     

Fe掺杂α-Bi2O3光电性质的第一性原理研究

采用第一性原理杂化泛函HSE06方法对Fe掺杂α-Bi2 O3的电子结构和光学性质进行了计算研究.结果表明,Fe掺杂α-Bi2 O3体系有较小的结构变形,本征α-Bi2 O3的禁带宽度为2.69 eV,Fe掺杂使α-Bi2 O3的禁带宽度减小(约为2.34 eV).对其光学性质研究得出Fe掺杂扩展了α-Bi2 O3对可...     

前驱体法制备氮氧化硅纳米线及其光学性能研究

在Ni催化剂的存在下,通过SiCl4的水解氨解反应并在1300℃氨气气氛中进行热氮化处理制得了无定形氮氧化硅纳米线.产物经X射线衍射(XRD)、热重-差示扫描量热(TG-DSC)、扫描电镜(SEM)、透射电镜(TEM)、能量色散谱(EDS)和选区电子衍射(SAED)等表征手段进行分析,结果表明纳米线为无定形结构,直径为100～150nm.在波长为220nm的光激发下,产物的光致发光光谱(PL)在563nm和289nm处分别出现了一个强的绿光发光峰和一个弱的紫光发光峰.对纳米线的生长机理进行分析,表明纳米线的生长遵循气-液-固(VLS)机制控制模式.     

ZnO薄膜的研究进展

光泵浦紫外激光的获得使ＺｎＯ成为热门的新型光电材料,文章从ＺｎＯ的基本特性、光电特性、生长方法,用途和应用前景等方面综述了ＺｎＯ的最新研究及进展,并对ＺｎＯ今后的发展作了展望。