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991.
张解放 《中国物理》2002,11(7):651-655
Using the extended homogeneous balance method, the B?cklund transformation for a (2+1)-dimensional integrable model, the generalized Nizhnik-Novikov-Veselov (GNNV) equation, is first obtained. Also, making use of the B?cklund transformation, the GNNV equation is changed into three equations: linear, bilinear and trilinear form equations. Starting from these three equations, a rather general variable separation solution of the model is constructed. The abundant localized coherent structures of the model can be induced by the entrance of two variable-separated arbitrary functions.  相似文献   
992.
反应离子镀光学薄膜的微观结构分析   总被引:2,自引:1,他引:1  
王建成  韩丽瑛 《光学学报》1993,13(10):56-959
用反应离子镀方法制备了TiO2单层膜及TiO2/SiO2多层膜,用透射电子显微镜分别观察了由反应离子镀方法及传统蒸镀法二种不同工艺制得的TiO2单层膜及TiO2/SiO2多层膜的断面结构,并对TiO2单层膜进行了喇曼分析和卢瑟福背散射分析。  相似文献   
993.
Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10−6 Ω-cm2 for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρc increasing to 2.94 × 10−6Ω-cm2 and for an aging at 410°C for 40 h with its ρc increasing to 1.38 × 10−5 Ω-cm2.  相似文献   
994.
Defects in molecular beam epitaxial GaAs grown at low temperatures   总被引:1,自引:0,他引:1  
We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.  相似文献   
995.
The shadow masked growth technique is presented as a tool to achieve thickness and bandgap variations laterally over the substrate during metalorganic vapor phase epitaxy. Lateral thickness and bandgap variations are very important for the fabrication of photonic integrated circuits, where several passive and active optical components need to be integrated on the same substrate. Several aspects of the shadow masked growth are characterized for InP based materials as well as for GaAs based materials. Thickness reductions are studied as a function of the mask dimensions, the reactor pressure, the orientation of the masked channels and the undercutting of the mask. The thickness reduction is strongly influenced by the mask dimensions and the reactor pressure, while the influence of the orientation of the channels and the amount of undercutting is only significant for narrow mask windows. During shadow masked growth, there are not only thickness variations but also compositional variations. Therefore, we studied the changes in In/Ga and As/P ratios for InGaAs and InGaAsP layers. It appears that mainly the In/Ga-ratio is responsible for compositional changes and that the As/P-ratio remains unchanged during shadow masked growth.  相似文献   
996.
We report here the identification of a new precipitate phase in thin-film Al-4wt.%Cu metallization used for interconnects on integrated circuits. The phase is based on a trigonal distortion of a face centered cubic lattice. Computer simulation of electron diffraction intensities suggests that the basis structure is isomorphous with Al2Ca but with a large and ordered population of vacancies on Cu sites. The reason for the formation of the new phase and its implications for electromigration reliability are discussed.  相似文献   
997.
Poly(monoitaconates) containing octyl, decyl and dodecyl groups and random monoalkylitaconate-co-vinylpyrrolidone copolymers were studied by thermogravimetric analysis. Copolymers of mono-n-octylitaconate (MOI), mono-n-decylitaconate (MDI), and mono-n-dodecylitaconate (MDoI), respectively, with N-vinyl-2-pyrrolidone (VP) of different compositions were studied by dynamic thermogravimetric analysis. The thermal stability of the copolymers depends on the structure of the monoitaconate comonomer and on the composition of the copolymer The kinetic analysis of the degradation data shows that the thermal decomposition of these copolymers can be described by several kinetic orders depending on the copolymer and on the composition. The relative thermal stability of the copolymers increases as the VP content increases and as the length of the side chain of the itaconate increases, following the same trend as the flexibility of the copolymers in solution.  相似文献   
998.
Capillary GC on permethyl α-, β-, and γ-cyclodextrins has been applied to separate and quantify the enantiomers of some 2,3-iso-propylidene-1,2,3-cyclohexanetriol derivatives. Quantitative CGC data are compared to those obtained with chiral shift 1H NMR.  相似文献   
999.
An overview is presented of the analytical approaches developed by our research group over the last ten years for analysis of alternative fuel, both biomass and fossil. The alternative fuels are analyzed successively by PLC-8 (preparative liquid chromatography–group-type) fractionation and high resolution gas chromatography. Some of the possibilities for fractionation and characterization of alternative fuels are herein exemplified with sugar cane bagasse pyrolysis products.  相似文献   
1000.
Summary. We examine the convergence characteristics of iterative methods based on a new preconditioning operator for solving the linear systems arising from discretization and linearization of the steady-state Navier-Stokes equations. With a combination of analytic and empirical results, we study the effects of fundamental parameters on convergence. We demonstrate that the preconditioned problem has an eigenvalue distribution consisting of a tightly clustered set together with a small number of outliers. The structure of these distributions is independent of the discretization mesh size, but the cardinality of the set of outliers increases slowly as the viscosity becomes smaller. These characteristics are directly correlated with the convergence properties of iterative solvers. Received August 5, 2000 / Published online June 20, 2001  相似文献   
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