Simultaneous studies of pressure effect on charge transport and photophysical properties in organic semiconductors: A theoretical investigation

High-mobility and strong luminescent materials are essential as an important component of organic photodiodes, having received extensive attention in the field of organic optoelectronics. Beyond the conventional chemical synthesis of new molecules, pressure technology, as a flexible and efficient method, can tune the electronic and optical properties reversibly. However, the mechanism in organic materials has not been systematically revealed. Here, we theoretically predicted the pressure-depended luminescence and charge transport properties of high-performance organic optoelectronic semiconductors, 2,6-diphenylanthracene (DPA), by first-principle and multi-scale theoretical calculation methods. The dispersion-corrected density functional theory (DFT-D) and hybrid quantum mechanics/molecular mechanics (QM/MM) method were used to get the electronic structures and vibration properties under pressure. Furthermore, the charge transport and luminescence properties were calculated with the quantum tunneling method and thermal vibration correlation function. We found that the pressure could significantly improve the charge transport performance of the DPA single crystal. When the applied pressure increased to 1.86 GPa, the hole mobility could be doubled. At the same time, due to the weak exciton coupling effect and the rigid flat structure, there is neither fluorescence quenching nor obvious emission enhancement phenomenon. The DPA single crystal possesses a slightly higher fluorescence quantum yield ～ 0.47 under pressure. Our work systematically explored the pressure-dependence photoelectric properties and explained the inside mechanism. Also, we proposed that the external pressure would be an effective way to improve the photoelectric performance of organic semiconductors.     

不同硼掺杂几何形态下石墨烯纳米带热导率与热整流的分子动力学研究

通过非平衡态分子动力学方法,研究了锯齿形石墨烯纳米带中掺杂原子硼的两种不同位置排列（三角形硼掺杂和平行硼掺杂）对热导率和热整流的影响并从理论上分析了其变化的原因。研究表明这两种硼掺杂模型在不同温度下导致石墨烯纳米带热导率大约54%-63%的下降;同时发现平行硼掺杂结构对热传递的抑制作用强于三角形硼掺杂结构;硼掺杂结构降低热导率的作用随着温度的升高逐渐减小;三角形硼掺杂结构两个方向上的热导率值具有较大差异,这种结构下的热整流随着温度的上升呈现减弱的趋势;而平行硼掺杂结构两个方向上的热导率值近乎相等,热整流现象表现不明显.     

各向同性光纤中拉曼增益对光脉冲自陡峭的影响

运用数学解析法导出了关于拉曼增益与自陡峭综合效应的光脉冲传输方程,在此基础上引入洛伦兹模型将拉曼增益整合到非线性系数中来研究光脉冲中拉曼增益对自陡峭效应的作用,重点分析了高斯脉冲在各向同性光纤中传播时,拉曼增益对其自陡峭效应具体影响方式,结果表明拉曼增益会减弱自陡峭中后沿偏移程度,减小脉冲展宽,但不会影响其峰值大小.     

石墨烯能带中的重叠矩阵效应:Tight-Binding方法在模拟中的研究

采用紧束缚方法计算了石墨烯的价带(π)和导带(π*),考虑了非正交基矢下重叠矩阵效应,重叠积分参量s越小,导带越靠近费米面,而价带越远离费米面.在重叠积分参量s≤0.1时,基本保持了原子在实际空间中重叠所引起的能带的改变,太大(s=0.4)则会导致物理上失效.计算了石墨烯的能态密度,在费米面ε=0处(对应Dirac点)的能态密度为零,并且在Dirac点附近呈线性变化.     

Rashba效应对量子线中束缚磁极化子性质的影响

采用改进的线性组合算符和幺正变换相结合的方法研究了Rashba效应对抛物量子线中强耦合束缚磁极化子性质的影响.计算了抛物量子线中强耦合束缚磁极化子的有效质量和振动频率,对Rb Cl材料的数值计算结果表明:量子线中强耦合束缚磁极化子的振动频率随受限强度和回旋频率的增加而增大;有效质量与磁极化子的受限强度、回旋频率和电子面密度有关,在Rashba效应影响下有效质量随上述各量的变化曲线都发生了分裂.     

The effect of macroscopic polarization on intrinsic and extrinsic thermal conductivities of AlN

The effect of macroscopic polarization on thermal conductivity of bulk wurtzite AlN has been theoretically investigated. Our results show that macroscopic polarization modifies the phonon group velocity, Debye frequency and Debye temperature of the AlN. Using revised phonon velocity and Debye temperature, various phonon scattering rates and combined scattering rate are calculated as functions of the phonon frequency at room temperature. The intrinsic and extrinsic thermal conductivities of AlN have been estimated using these modified parameters. The theoretical analysis shows that up to a certain temperature the polarization effect acts as negative effect and reduces the intrinsic and extrinsic thermal conductivities. However, after this temperature both thermal conductivities are significantly enhanced. High phonon velocity and Debye temperature are the reason of this enhancement which happens due to the polarization effect. The revised thermal conductivities at room temperature are found to be increased by more than 20% in AlN due to macroscopic polarization phenomenon. The method we have developed can be taken into account during the simulation of heat transport in optoelectronic nitride devices to minimize the self heating processes.     

Electrical conductivity,optical properties and mechanical stability of 3, 4, 9, 10-perylenetetracarboxylic dianhidride based organic semiconductor

The 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) doped polymer films were prepared with Polypyrrole (PPy) and Polyvinyl alcohol (PVA) polymers by solution-casting. The change in structure and chemical composition of samples was identified by XRD and FTIR respectively. The UV–visible spectroscopy demonstrates the optical characteristics and band gap properties of sample. The homogeneous morphology of sample for higher wt% of PTCDA was examined by atomic force microscopy (AFM). The differential scanning calorimetry (DSC) results demonstrate the decrease in melting temperature (T_m) and degree of crystallinity (χ_c%) of polymeric organic semiconductor. The mechanical property demonstrates the high tensile strength and improved plasticity nature. Impedance spectroscopy was evaluated to determine the conductivity response of polymeric organic semiconductor. The highest DC conductivity (2.08×10⁻³ S/m) was obtained for 10 wt% of PTCDA at 140 °C. The decrease in activation energy (E_a) represents the non-Debye process and was evaluated from the slope of ln σ_dc vs. 10³/T plot.     

Temperature and humidity behaviour of a corona based smoke sensor

Ionization smoke sensors are amongst the best smoke sensors; however, the little radioactive source that they include is no longer desirable since recycling gets more complicated. In this paper we discuss an electrostatic system in which corona phenomena is used to generate the ions needed to smoke detection. We show how the velocity of ions is reduced in our system for a better interaction between smoke and drifting ions. Influence of smoke, temperature and moisture is studied. It is shown that the proposed sensor has a good sensitivity compared with conventional ionic and optical smoke sensors.     

微秒脉冲下极性效应对碳酸丙烯酯击穿场强的影响

通过对比碳酸丙烯酯在针板电极间距分别为0.5、1.0和2.0 mm下的击穿电压大小的实验,研究碳酸丙烯酯的极性效应.实验设备包含一个充电时间在5～20毫秒的电容储能型脉冲型脉冲功率源和一个内置针板电极的击穿试件. 每一组的击穿电压通过示波器显示记录. 三组不同间距下的击穿实验数据表明碳酸丙烯酯的正电极击穿场强高于负电极击穿场强,并且击穿场强随着电极间距的增大而增 大. 对碳酸丙烯酯针板电极的击穿进行了仿真模拟实验. 基于实验结果对碳酸丙烯酯的极性效应给出了相应的解释.     

关于开设内光电效应实验的探索与思考

介绍了开设以内光电效应为理论基础的半导体光电器件的重要性和迫切性,并详细介绍了内光电效应的理论与半导体光电器件的分类和应用前景。