Conductance asymmetry of a slot gate Si‐MOSFET in a strong parallel magnetic field

We report measurements on a Si‐MOSFET sample with a slot in the upper gate, allowing for different electron densities n_1,2 across the slot. The dynamic longitudinal resistance was measured by the standard lock‐in technique, while maintaining a large DC current through the source‐drain channel. We find that the conductance of the sample in a strong parallel magnetic field is asymmetric with respect to the DC current direction. This asymmetry increases with magnetic field. The results are interpreted in terms of electron spin accumulation or depletion near the slot.     

Photochromism of new unsymmetrical isomeric diarylethenes bearing a methoxyl group

Three new unsymmetrical isomeric diarylethenes having a methoxyl substituent at ortho‐, meta‐, and para‐position of the terminal benzene ring, namely 1‐(2,5‐dimethyl‐3‐thienyl)‐2‐[2‐methyl‐5‐(2‐methoxylphenyl)‐3‐thienyl]perfluorocyclopentene ( 1o ), 1‐(2,5‐dimethyl‐3‐thienyl)‐2‐[2‐methyl‐5‐(3‐methoxylphenyl)‐3‐thienyl]perfluorocyclopentene ( 2o ), and 1‐(2,5‐dimethyl‐3‐ thienyl)‐2‐[2‐methyl‐5‐(4‐methoxylphenyl)‐3‐thienyl]perfluorocyclopentene ( 3o ), have been synthesized. The substituent position effect of methoxyl group on their properties, including photochromism and fluorescence both in hexane solution and in PMMA film, and their electrochemical properties, were investigated in detail. These diarylethenes showed good photochromism both in solution and in PMMA film. For the same photochromic diarylethene backbone, the electron‐ donating methoxyl substituent can effectively depress the cyclization quantum yields and increase the cycloreversion quantum yields compared to those of diarylethenes bearing chlorine atoms reported previously. Diarylethenes 1o – 3o showed clear fluorescent switches by photoirradiation both in hexane and in PMMA film. In addition, cyclic voltammetry tests showed that the electron‐donating methoxyl group at different position on the terminal benzene ring had a significant effect on the electrochemical properties of these isomeric diarylethenes. Copyright © 2009 John Wiley & Sons, Ltd.     

Planar Hall effect in biosensor with a tilted angle of the cross-junction

A typical planar Hall effect (PHE) sensor junction consists of two Hall bars that the bars appear normal to each other and the junction can have the required four terminals for current and voltage measurements. We are now introducing a tilted angle of the cross-junction and studying the role of the PHE therein. The results show that although there is a tilted angle of the cross-junction, the PHE voltage is remained constant. The result is interpreted by assuming the sensor material with the behavior of a basic single domain structure under the external magnetic field reversals. The calculations of the model are found to be in good concurrence with the experimental results.     

Elastic behaviour of an edge dislocation near a sharp crack emanating from a semi-elliptical blunt crack

The interaction between an edge dislocation and a crack emanating from a semi-elliptic hole is dealt with. Utilizing the complex variable method, closed form solutions are derived for complex potentials and stress fields. The stress intensity factor at the tip of the crack and the image force acting on the edge dislocation are also calculated. The influence of the morphology of the blunt crack and the position of the edge dislocation on the shielding effect to the crack and the image force is examined in detail. The results indicate that the shielding or anti-shielding effect to the stress intensity factor increases acutely when the dislocation approaches the tip of the crack. The effect of the morphology of the blunt crack on the stress intensity factor of the crack and the image force is very significant.     

Anisotropic electrical properties of Bi0.5(Na0.75K0.25)0.5TiO3 ceramics fabricated by reactive templated grain growth (RTGG)

We have fabricated lead-free Bi_0.5(Na_0.75K_0.25)_0.5TiO₃ (BNKT) ceramics by a conventional process (CP) and reactive templated grain growth (RTGG) methods. The effect of grain orientation on structure, dielectric, complex impedance and electrical properties was investigated. The phase formation and grain morphology of BNKT ceramics were examined by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. High dielectric constant and low dielectric loss was observed for grain oriented (textured) BNKT ceramics. Complex impedance, temperature dependent ac and dc conductivity were performed to explore the conduction behavior of the prepared BNKT ceramics.     

斜入射脉冲X射线产生电流实验

针对斜入射脉冲X射线与金属的几种可能相互作用机制,设计了实验布局,测量了斜入射X射线在金属靶上产生的脉冲电流,建立了相应的理论模型。结果显示,当X射线入射强度低于105 W/cm2时,以光电效应为主,高于此值时,以热电效应为主导。这表明,X射线加载强度较弱时,电子表现出个体行为,而增大X射线入射强度,电子表现出弱关联集体行为。由此可以预测,超强X射线辐照下,金属表面将出现宏观尺度的电荷密度调制,在退激发过程中,这种调制状态可能以较高的效率辐射定向的微波电磁脉冲。     

Dome效应对四孔大气相干长度仪系统性能的影响

以水平方向距仪器1 000 m的卤钨灯为光源,通过同步对比实验探究了两台四孔大气相干长度仪的系统性能。实验结果表明,由它们测得的大气相干长度的大小和总体变化趋势能够较好吻合,相关性系数均在0.94以上,具有较好的一致性。在此基础上,进一步研究了Dome效应对该系统性能的影响。该效应的影响主要表现在使大气相干长度变小,其强度则由系统沿光路方向移动的距离决定。当移动距离小于15 cm时,Dome效应较弱,不会对实验结果产生明显影响;在距离从15 cm增至55 cm的过程中,其强度不断增加,并在55 cm处达到最强,此后则不再随距离的增加而变化。在整个实验过程中,实验结果的相关系数始终在0.9以上,即Dome效应对大气相干长度的总体变化趋势没有明显影响。     

Interplay of Rashba effect and spin Hall effect in perpendicular Pt/Co/MgO magnetic multilayers

The interplay of the Rashba effect and the spin Hall effect originating from current induced spin–orbit coupling was investigated in the as-deposited and annealed Pt/Co/MgO stacks with perpendicular magnetic anisotropy. The above two effects were analyzed based on Hall measurements under external magnetic fields longitudinal and vertical to dc current,respectively. The coercive field as a function of dc current in vertical mode with only the Rashba effect involved decreases due to thermal annealing. Meanwhile, spin orbit torques calculated from Hall resistance with only the spin Hall effect involved in the longitudinal mode decrease in the annealed sample. The experimental results prove that the bottom Pt/Co interface rather than the Co/MgO top one plays a more critical role in both Rashba effect and spin Hall effect.     

(CH3)2和(NH2)2基团修饰的齐聚苯乙炔分子电子输运性质研究

采用密度泛函理论和非平衡格林函数相结合的方法研究了S原子作为单、双端基的(CH₃)₂-OPE (齐聚苯乙炔)和(NH₂)₂-OPE分子在金电极间的电子输运性质. 通过第一性原理优化计算获得分子部分稳定结构, 再置于Au电极之间构成两极系统, 然后再优化整个两极系统获得稳定结构. 另外, 通过非平衡格林函数方法计算了两极系统的电子输运性质. 计算结果表明, 不同的修饰基团和桥接方式可以导致两极系统的开关效应、负微分电阻行为和整流行为等不同的电子输运性质. 通过计算不同偏压下的分子体系投影轨道电子分布、透射谱、态密度, 对这些新异的电输运性质出现的机理进行了解释.     

高功率梯度掺杂增益光纤温度特性理论研究

在高功率光纤激光器中, 增益光纤的热效应是限制激光功率进一步提高的重要因素之一. 为了降低增益光纤的最高温度, 提出了一种通过改变增益光纤的掺杂浓度分布, 分散光纤激光的热效应, 从而提高激光输出功率的方法. 基于速率方程模型和热传导模型, 在光纤激光放大器输出功率大致相当的情况下, 对几种不同掺杂方式下增益光纤中的热分布和放大器的输出功率进行了数值模拟. 研究结果表明: 增益光纤的梯度掺杂可以优化光纤中的温度分布并提高光纤熔接点的稳定性; 同时兼具提高输出光束的光束质量、抑制光纤中非线性效应和模式不稳定的效果, 是提高光纤激光放大器输出功率切实可行的办法. 研究结果可以为高功率光纤激光器中增益光纤的设计提供一定的参考.