Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.     

分散图象压缩的遗传算法

基于分形和PIFS函数的特点，提出一种改进的遗传算法用于分形压缩分块的定义域匹配搜索算法。该方法克服了原来分形图象压缩中分类匹配算法固有的局部最优性和随机搜索的缺点，是一种具导引的全局优化的搜索算法。分析和实验表明，该方法的图象压缩比高，解码质量好，若应用遗传算法的并行性，其编码速度也得到提高。     

NGN问题及其发展策略考虑

本文在分析讨论NGN的背景，目前存在的争议基础上，结合中国国情，重点对NGN框架目标进行了展望并提出了发展策略考虑。     

数字视频混合系统的设计

介绍了利用Philips的一款视频芯片SAA71 99B实现的数字视频混合系统.该系统可以将一路PAL制彩色复合视频信号编码进入另一路PAL制彩色复合视频信号中,以取代第二路视频中用户指定的颜色,从而实现了两路视频的混合.另外还介绍了如何利用单片机的I/O口模拟I 2C总线以及如何利用单片机进行彩色空间变换的算法.     

溅射功率对多层膜质量的影响

用磁控溅射技术制备薄膜，用X射线衍射研究在基片和靶间距离固定的情况下不同的溅射功率对薄膜结构的影响。结果表明：过低的溅射功率下淀积的薄膜有畸变的X射线衍射特征峰，特征峰强度小，半峰全宽大。而比较高溅射功率得到的薄膜有比较尖锐的X射线衍射特征峰，强度高和半峰全宽非常窄。研究表明，X射线衍射特征峰强度小和半峰全宽大的薄膜结构疏松，而强度高和半峰全宽非常窄的薄膜结构致密。     

用小波变换抑制SAR图像中的斑点噪声

抑制合成孔径雷达图像中的斑点噪声一直是处理图像并得到准确图像信息的难点，提出了一种基于小波变换抑制合成孔径雷达（SAR）图像中的斑点噪声的方法，对原有的小波变换方法作了改进，能更好地保留图像的边缘信息，并能简化计算量。在仿真实验中使用了合成的模拟图像和真实的合成孔径雷图像，并与以往的小波去噪滤波方法以及一些经典的斑点噪声滤波方法（包括中值滤波，Lee滤波，Frost滤波）进行比较，在综合考虑了滤波算法在均匀区域对斑点噪声的抑制能力以及保留边缘信息能力的情况下，提出的算法有更好的效果。     

A topological aspect of Sobolev mappings

Let be a connected open set, . We give a sufficient condition for a mapping , , to have the property that sgn is almost everywhere of one sign. Following the work of Müller, Spector, and Tang [MST], we give an application of our results to the theory of non-linear elasticity. Received: 13 October 2000 / Accepted: 23 January 2001 / Published online: 4 May 2001     

Backlund transformation and variable separation solutions for the generalized Nozhnik—Novikov—Veselov equation

Using the extended homogeneous balance method, the B?cklund transformation for a (2+1)-dimensional integrable model, the generalized Nizhnik－Novikov－Veselov (GNNV) equation, is first obtained. Also, making use of the B?cklund transformation, the GNNV equation is changed into three equations: linear, bilinear and trilinear form equations. Starting from these three equations, a rather general variable separation solution of the model is constructed. The abundant localized coherent structures of the model can be induced by the entrance of two variable-separated arbitrary functions.     

低相噪,低杂波数字锁相环路滤波器的设计

较详细地分析数字锁相频率合成器的相位噪声，着重用控制论方法对低相噪、低杂波锁相环的环路滤波器进行设计，并用某Ｓ波段频率合成器的实验结果进行了验证。     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².