Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N₂O as oxygen dopant source. The layers were deposited on 2″ sapphire substrates from trimethylgallium and especially dried ammonia using nitrogen (N₂) as carrier gas. Prior to the growth of the films, an AIN nucleation layer with a thickness of about 300? was grown using trimethylaluminum. The films were deposited at 1085°C at a growth rate of 1.0 μm/h and showed a specular, mirrorlike surface. Not intentionally doped layers have high resistivity (>20 kW/square). The gas phase concentration of the N₂O was varied between 25 and 400 ppm with respect to the total gas volume. The doped layers were n-type with carrier concentrations in the range of 4×10¹⁶ cm⁻³ to 4×10¹⁸ cm⁻³ as measured by Hall effect. The observed carrier concentration increased with increasing N₂O concentration. Low temperature photoluminescence experiments performed on the doped layers revealed besides free A and B exciton emission an exciton bound to a shallow donor. With increasing N₂O concentration in the gas phase, the intensity of the donor bound exciton increased relative to that of the free excitons. These observations indicate that oxygen behaves as a shallow donor in GaN. This interpretation is supported by covalent radius and electronegativity arguments.     

Monitoring of CdTe atomic layer epitaxy using in-situ spectroscopic ellipsometry

Atomic layer epitaxy or ALE has proven to be useful for the growth of epitaxial layers of high uniformity, good quality, and well-controlled thickness. In this study, we have carried out in-situ monitoring during the atmospheric pressure ALE of CdTe on GaAs (100) substrates using spectroscopic ellipsometry (SE). The susceptor temperature, reactant partial pressures, as well as the flow and flush duration for each precursor are crucial process variables for ALE growth. Growth was carried out for 20–25 cycles under different sets of these process conditions during the experiment and in-situ SE was used to verify the presence of layer-by-layer growth, which enabled the quick determination of the process window. We observed ALE growth of CdTe at 300°C, supporting the explanation that the growth of CdTe occurs via a surface catalyzed decomposition of the Te precursor di-isopropyltelluride (DIPTe). Investigation of ALE mode growth behavior for different susceptor temperatures and DIPTe flush times indicated that the growth was limited by competition between desorption and reaction of the adsorbed DIPTe species on the Cd terminated surface.     

Small generators of number fields

If K is a number field of degree n over Q with discriminant D _K and if α∈K generates K, i.e. K=Q(α), then the height of α satisfies with . The paper deals with the existence of small generators of number fields in this sense. We show: (1) For each $n$ there are infinitely many number fields K of degree $n$ with a generator α such that . (2) There is a constant d ² such that every imaginary quadratic number field has a generator α which satisfies .?(3) If K is a totally real number field of prime degree n then one can find an integral generator α with . Received: 10 January 1997 / Revised version: 13 January 1998     

Défaut d'exactitude des modéles¶de Néron toriques sur un corps local

Let R be a complete discrete valuation ring with mixed characteristic. Denote by K its field of fractions and by k its residue field. Let 0 →A ^K →B ^K →C ^K → 0 be an exact sequence of abelian varieties over K and consider the corresponding complex of Nérons models 0 →A→B→C→ 0, over R. We assume that the identity component B _k ⁰ of the special fibre B _k of B is a torus and we study the defect of exactmess at B in this last sequence.

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Re?u: 4 décembre 1997/ Version revisée: 15 décembre 1997     

灰色模型的最优化及其参数的直接求法

基于灰色模型的内涵表达式和白化方程响应式均为等比级数的观点,提出了一种不用求ago值、均值,不涉及灰色微分方程,白化微分方程概念,直接求灰色模型参数a,c的方法,通过此方法建立的新模型不仅从理论上可保证是在满足给定评价标准为模拟绝对误差平方和最小(或模拟相对误差平方和最小)、给定精度条件下的最优化模型,从而结束了灰色模型只有更优,没有最优的历史.并从理论上证明了新模型具有白化指数律重合性、白化系数律重合性,伸缩变换一致性.最后通过实例编程验证该方法具有可操作性,且预测精度高,效果好.     

TERAHERTZ QUALITY CONTROL OF POLYMERIC PRODUCTS

We report on experiments that evaluate the potential of terahertz (THz) time-domain spectroscopy (TDS) for quality control of polymeric compounds. We investigate specimens out of a polyethylene compound with silver-coated titanium dioxide nanospheres and a glass-fiber reinforced epoxy composite. We further examine an industrial polymer product produced by injection molding. Our data demonstrates that THz imaging is a powerful tool for contactless quality control in the polymer industry.     

The <Emphasis Type="Italic">M</Emphasis>/<Emphasis Type="Italic">G</Emphasis>/∞ system revisited: finiteness,summability, long range dependence,and reverse engineering

We explore M/G/∞ systems ‘fed’ by Poissonian inflows with infinite arrival rates. Three processes – corresponding to the system's state, workload, and queue-size – are studied and analyzed. Closed form formulae characterizing the system's stationary structure and correlation structure are derived. And, the issues of queue finiteness, workload summability, and Long Range Dependence are investigated. We then turn to devise a ‘reverse engineering’ scheme for the design of the system's correlation structure. Namely: how to construct an M/G/∞ system with a pre-desired ‘target’ workload/queue auto-covariance function. The ‘reverse engineering’ scheme is applied to various examples, including ones with infinite queues and non-summable workloads. AMS Subject Classifications Primary: 60K25; Secondary: 60G55, 60G10     

Characterization of heat-assisted magnetic probe recording on CoNi/Pt multilayers

A method of heat-assisted magnetic recording (HAMR) potentially suitable for probe-based storage systems is characterized. In this work, field emission current from a scanning tunneling microscope (STM) tip is used as the heating source. Pulse voltages of 2–7 V were applied to a CoNi/Pt multilayered film fabricated on either bare silicon or oxidized silicon substrates. Different types of Ir/Pt and W STM tips were used in the experiment. The results show that thermally recorded magnetic marks are formed with a nearly uniform mark size of 170 nm on the film fabricated on bare silicon substrate when the pulse voltage is above a threshold voltage. The mark size becomes 260 nm when they are written on the identical film fabricated on an oxidized silicon substrate. The threshold voltage depends on the material work function of the tip, with W having a threshold voltage about 1 V lower than Pt. A synthesized model, which contains the calculation of the emission current, the simulation of heat transfer during heating, and the study of magnetic domain formation, was introduced to explain experimental results. The simulation agrees well with the experiments.     

t—BuNO二聚体在不同溶剂中裂解机理的研究

本文利用＾１ＨＮＭＲ，ＵＶ－Ｖｉｓ方法，研究了ｔ－ＢｕＮＯ二聚体在有机溶剂及水溶液中的裂解反应产物，分析了其反应的动力学，提出了在非极性的有机相中ｔ－ＢｕＮＯ二聚体为均裂反应，而在极性的水相中为均裂和异裂同时进行的竞争反应。