微光电子集成灵巧象素器件

我们采用 MBE生长出大周期 Ga As/ Al Ga As多量子阱 (MQW)外延材料 ,研制了适用于倒装焊结构的自电光效应器件 (SEED)列阵 ,并与 Si CMOS电路通过倒装焊工艺集成为微光电子集成灵巧象素器件。通过对光电特性测试表明 ,器件具有良好的光探测和光调制性能。     

基于STM32W108的无线传感系统

通过对传统的工业数据采集系统研究比较,提出了基于ZigBee的无线传感系统设计,创新采用具有32位的ARM Cortex-M3内核的STM32W108单片机,固化协议栈.该系统将采集到的工业数据通过数据采集端设备和协调器节点组成的ZigBee网络传送给PC机,然后进行统一的分析和处理.引入手持设备,方便特殊情况下的现场数据采集和处理.     

非连续运行设备贮存-工作联合退化模型及其应用

 对某些非连续运行的设备,贮存状态和工作状态会交替出现,工程上可通过观测其关键性能参数变化监控设备健康状态,并以此为依据对其寿命和可靠性进行预测分析.针对该类设备,本文综合分析其贮存和工作条件下性能退化规律,建立设备贮存-工作联合退化模型,利用性能退化数据的拐点特性对该联合退化模型的参数进行估计,在此基础上,实现设备的可靠性分析和寿命预测.最后以金属化膜电容器为例建立了联合退化模型,分析该电容器的可靠性并预测寿命.     

两种不同结构及掺杂的白色有机发光二极管

白色有机发光器件由于在其上加彩色滤光片可容易地达到全彩效果而备受关注,本文通过两种不同结构及掺杂的器件,实现了白色有机电致发光,一种为具有空穴锁定层并在其中掺杂的器件;另一种为蓝色染料和红色染料分别加在发光层与电子传输层中的普通3层结构器件。结构分别为ITO／NPB／TPBi;Rubrene/Alq/Mg;Ag和ITO/NPB/DPVBi;Perylene/Alq :DC JTB/Mg:Ag。具有空穴锁定层的器件和普通型器件的最大亮度、最大流明效率、色度分别为8635cd/m^2、0.851m/W、（x=0.31,y=0.32)10倍,空穴锁定层的器件寿命远小于普通型的。此文对此差异进行了分析。     

Charge balance materials for homojunction and heterojunction OLED applications

In a homojunction device, a single organic layer assumes the multiple roles of hole, electron transportation, and emitter. Its ease in processing is highly desirable from the manufacturing point of view. In this paper, we shall describe the synthesis of a range of bipolar small molecules and conductive vinyl polymers for application in homojunction and heterojunction organic light emitting diodes (OLEDs). The bipolar materials, in general, consist of three basic building blocks: an arylamine, a 1,3,4-oxadiazole, and a polycyclic aromatic moiety. The achievement of charge balance can be validated either by direct measurement of electron/hole mobility or indirectly via optimization of device properties.A series of conductive vinyl copolymers containing hole transporting N-(4-methoxyphenyl)-N-(4-vinylphenyl)naphthalen-1-amine (4MeONPA) and electron transport-ing 2-phenyl-5-(4-vinylphenyl)-1,3,4-oxadiazole (OXA) at different compositions was applied for heterojunction and homojunction OLEDs. For heterojunction devices employed the copolymers as the hole transporting layer and Alq3 as the electron transporting and emitting layer,a maximum luminance and current efficiency of over 23000 cd/m2 and 4.2 cd/A (PL of Alq3), respectively, were achieved at the charge balance composition. Homojunction devices for the copolymers were demonstrated by the addition ofrubrene as a dopant. The single layer devices at the optimal copolymer composition has ca 1500 cd/m2 and 0.74 cd/A.     

A Hierarchical Modeling and Fault Diagnosis Method for Complex Electronic Devices

Due to the shortcomings of the diagnosis systems for complex electronic devices such as failure models hard to build and low fault isolation resolution, a new hierarchical modeling and diagnosis method is proposed based on multisignal model and support vector machine （SVM）. Multisignal model is used to describe the failure propagation relationship in electronic device system, and the most probable failure printed circuit boards （PCBs） can be found by Bayes inference. The exact failure modes in the PCBs can be identified by SVM. The results show the proposed modeling and diagnosis method is effective and suitable for diagnosis for complex electronic devices.     

Electrical characterization and morphological properties of AlN films prepared by dc reactive magnetron sputtering

Aluminum nitride (AlN) films were deposited by dc reactive magnetron sputtering on p-Si-(1 0 0) substrate in Ar-N₂ gas mixtures. The effects of nitrogen concentration and sputtering power on AlN films deposition rate, crystallographic orientation, refractive index, and surface morphology are investigated by means of several characterization techniques. The results show that AlN films reasonably textured in (0 0 2) orientation with low surface roughness can be obtained with the deposition rate as high as 70 nm/min by the control of either target power or N₂ concentration in the gas mixture. Increasing the dc discharge power, Al atoms are not completely nitridized and the Al phases appear, as well as the AlN phases. MIS (Metal-Insulator-Semiconductor) structures were fabricated and electrically evaluated by I-V (current-voltage) and C-V (capacitance-voltage) measurements at high frequency (1 MHz). The results obtained from C-V curves indicate that charges at the dielectric/semiconductor interface occur, and the dielectric constant values (extracted under strong accumulation region) are compatible with those found in literature.     

柔性有机电致发光器件的研究进展

柔性OLED技术尚未成熟,要实现产业化,其稳定性和显示效率仍有待进一步改善.本文从FOLED衬底材料的选取和处理、阳极材料的选取和设计、柔性器件的包封等方面,介绍了FOLED几项关键技术研究进展,并对其研究与应用前景进行了展望.     

从量子点的角度审视碳点的研究进展

碳点不仅具有类似于传统量子点的强发光和小尺寸特性,还表现出传统量子点无法比拟的水相分散性和生物相容性等优势.作为量子点领域的一个新兴分支,碳点的结构、合成化学和光电性质与传统量子点显著不同,也为量子点的发展提供了新的机遇和挑战.随着碳点领域的迅速发展和不断深化,越来越有必要在一些基本概念上与传统量子点比较,并从传统量子点的角度澄清碳点的独特特征和关键挑战.本综述主要聚焦于基本结构、合成化学、光学性质和应用研究等四个方面,从传统量子点基础概念的角度来重新审视碳点领域的研究进展和挑战.     

门极换流晶闸管(GCT)击穿机理的研究

简述了门极换流晶闸管(GCT)的耐压结构及其特点.利用MEDICI软件模拟和分析了具有不同结构参数的四种器件的阻断能力和通流能力,研究了GCT的击穿机理.结果表明,GCT的击穿实质上属于场阻止(FS)型击穿,并非穿通(PT)型击穿.从而指出以往对GCT击穿机理的认识存在局限性.