低损耗氮化硅延迟线芯片及组件验证

光控相控阵技术有望解决传统相控阵雷达中电相移器带来的波束倾斜和波形展宽问题,基于光子集成技术的延迟线芯片与波束形成技术受到了广泛研究。本文研制了低损耗MZI步进型延迟线芯片,其延时步进6.4 ps,位数5 bit,最大延时量198.4 ps,波导损耗＜0.1 dB/cm。实现了芯片的模块化封装,延时状态切换速度优于100 μs,1~20 GHz工作频率范围,其电幅度一致性±4.5 dB,相位一致性±23°,光功率一致性±1.5 dB,延时量误差为-0.6 ~+2.0 ps。本文研制了八阵元光控波束形成网络样机,实现了从-35°到+35°的波束扫描,验证了基于低损耗氮化硅延迟线芯片的波束形成技术。     

n型单晶硅片的电阻率和扩散方阻对IBC太阳电池电性能的影响

叉指背接触式(IBC)太阳电池因正面没有金属栅线遮挡,具有较高的短路电流,且组件外观更加美观。但由于IBC太阳电池正负电极在背面交叉式分布,在制备过程中需要采用光刻掩模技术进行隔离,难以实现大规模生产。采用Quokka软件仿真模拟了电阻率和扩散方阻对n型IBC太阳电池效率的影响,并对不同电阻率和扩散方阻的电池片进行了实验验证,从n型单晶硅片电阻率的选择和扩散工艺优化方面为IBC太阳电池的规模化生产提供了理论基础。实验结果表明,电阻率为3~5Ω·cm、扩散方阻为70Ω/时,小批量生产的IBC太阳电池平均光电转换效率可达23.73%,开路电压为693 mV,短路电流密度为42.44 mA/cm²,填充因子为80.69%。     

ANISOTROPIC STRAIN EFFECT ON MORPHOLOGY AND ATOMIC STRUCTURE OF VICINAL Si(001) SURFACE

On vicinal Si(001) surfaces, dependence of growth morphology on the applied strain direction and formation of vacancy lines from Ag-induced missing dimer vacancies are studied. Both phenomena are intimately related to the anisotropic nature of the strain field which originates from the surface dimerization. Strain relief mechanism, reflecting on the surface morphology, is shown to be different in two orthogonal directions. Normal to the steps, step-pair bunching and waving lead to formation of hillocks and pits. Along the step direction, bending of step pairs forms a cusp which later develops into a deep groove. Toward the atomic scale, the formation of the vacancy lines is driven by the short-range attractive interaction between the vacancies in adjacent dimer rows and the long-range repulsive interaction between them in the same dimer row. A full form and magnitudes of the interactions are derived from the thermally-excited wandering of the vacancy lines formed by a nominal amount of Ag depositing onto the surface.     

石墨炉原子吸收法直接测定高温合金中硅

研究了混合基体改进剂，灰北、原子化温度以及共存元素的干扰，采用镧和钙作混合基体改进剂后，硅的灵敏度提高，抗干扰能力增强，可以用石墨炉原子吸收直接测定高温合多中硅。方法特征量为０．２ｎｇ，检出限为２．３μｇ／ｇ，对于含硅量为４００μｇ／ｇ左右的合金样品，相对标准偏差为５％左右，回收率在９０％－１１０％之间。     

Nanoclusters of Silicon and Germanium

Synthetic routes for the preparation of Si or Ge nanoclusters as gaseous species, colloids, supported composites, or as unsupported powders are reviewed along with selected characterization data. The optical properties of these and related materials, such as porous Si, are summarized with particular emphasis on photo- or electroluminescence phenomena. Research opportunities related to Si and Ge cluster chemistry are suggested.     

一种非晶硅膜改性弹性玻璃毛细管交联中等极性固定相色谱柱的制备

研究了非晶硅膜改性的弹性玻璃毛细管交联ＯＶ－１７０１中等极性固定相色谱柱。在适当温度下，采用过氧化二异丙苯（ＤＣＵＰ）游离基引发交联ＯＶ－１７０１固定液，成功地制备了交联ＯＶ－１７０１柱，该柱具有柱效高、惰性好、耐溶剂、抗腐蚀和耐高温等性能，是一种新型高性能的中等极性交联柱。     

Recent advances in the activation of boron and silicon reagents for stereocontrolled allylation reactions

Despite the popularity of boron and silicon allylation reagents in stereocontrolled synthesis, they suffer from a number of inherent limitations that have slowed down their development as synthetic tools for nucleophilic additions to carbonyl compounds and imine derivatives. These limitations are the low reactivity and diastereoselectivity of allyl trialkylsilane reagents, and the lack of catalytic systems for the activation and substoichiometric control of enantioselectivity in the additions of allyl boron reagents. To develop more efficient and general methods for the control of absolute stereochemistry in the resulting homoallylic alcohols, new approaches aimed at solving the problem of activation of allylic boron and silicon reagents are needed. This Minireview describes a number of recent approaches that have been devised to address this problem.     

Synthesis of Ultrafine SiC Powders from Carbon-Silica Hybridized Precursors with Carbothermic Reduction

Inorganic-organic hybrid gels were prepared by simultaneous condensation of the liquid mixture of ethyl silicate, ethyl borate and water soluble phenol resin with low molecular weight. The liquid mixtures were changed into lightly colored transparent gels after a catalyst addition and stirring. The obtained gels were crushed, dried and fired in controlled conditions to yield the inorganic precursors. Since the tailored inorganic precursors mainly consisted of SiO2 and carbon, silicon carbide was formed with the heat treatments in an Ar atmosphere beyond 1773 K with carbothermic reduction. The properties and morphology of the formed silicon carbide powders in terms of the starting precursor compositions and the conditions of the carbothermic reduction were investigated with SEM, XRD and TG-DTA analysis.     

三甲基硅基化反应的研究

本文研究了以水玻璃作为硅酸盐阴离子,按Lentz方法进行的三甲基硅基化反应。在改变反应克分子比例时,可得到不同分子量和硅基化程度的硅树脂,由此说明,在硅基化反应时可能发生聚合、解聚和水解等副反应。对影响硅树脂产率的反应条件和三甲基硅基化树脂的一些物理性质也进行了讨论。